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PanJit Group PJMD360N60EC_L2_00001 600V SUPER JUNCTION MOSFET
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DigiKey	PJMD360N60EC_L2_00001	Digi-Reel	5,985		1	1 $3.96 10 $2.597 100 $3.96 1000 $1.38867 10000 $1.38867	Buy Now
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	PJMD360N60EC_L2_00001	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.75825	Buy Now
PanJit Group PJMF360N60EC_T0_00001 600V SUPER JUNCTION MOSFET
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DigiKey	PJMF360N60EC_T0_00001	Tube	2,000		1	1 $7.98 10 $5.423 100 $7.98 1000 $3.41502 10000 $3.41502	Buy Now
PanJit Group PJMP360N60EC_T0_00001 600V SUPER JUNCTION MOSFET
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DigiKey	PJMP360N60EC_T0_00001	Tube	1,980		1	1 $3.17 10 $3.17 100 $3.17 1000 $1.33472 10000 $1.33472	Buy Now
onsemi FCPF260N60E MOSFET N CH 600V 15A TO-220F
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DigiKey	FCPF260N60E	Tube	1,867		1	1 $4.39 10 $2.902 100 $4.39 1000 $1.602 10000 $1.602	Buy Now
Avnet Americas	FCPF260N60E	Bulk		16 Weeks, 4 Days	1	1 $2.48 10 $2 100 $1.72 1000 $1.72 10000 $1.72	Buy Now
	FCPF260N60E	Tube		16 Weeks	1,000	1 - 10 - 100 - 1000 $1.56355 10000 $1.50716	Buy Now
Mouser Electronics	FCPF260N60E		1,085			1 $2.7 10 $2.09 100 $1.73 1000 $1.6 10000 $1.56	Buy Now
Newark	FCPF260N60E	Bulk	45		1	1 $1.51 10 $1.51 100 $1.51 1000 $1.51 10000 $1.51	Buy Now
Rochester Electronics	FCPF260N60E		157		1	1 $1.78 10 $1.78 100 $1.67 1000 $1.51 10000 $1.51	Buy Now

Richardson RFPD	FCPF260N60E				1,000	1 - 10 - 100 - 1000 $1.6 10000 $1.6	Buy Now
Avnet Silica	FCPF260N60E			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	FCPF260N60E			18 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi FGH60N60SMD IGBT FIELD STOP 600V 120A TO247
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DigiKey	FGH60N60SMD	Tube	1,668		1	1 $7.21 10 $7.21 100 $4.14867 1000 $2.985 10000 $2.985	Buy Now
Avnet Americas	FGH60N60SMD	Tube	18,941	20 Weeks	30	1 - 10 - 100 $2.84286 1000 $2.65333 10000 $2.65333	Buy Now
	FGH60N60SMD	Bulk	10	24 Weeks, 4 Days	1	1 $6.72 10 $6.62 100 $4.05 1000 $4.05 10000 $4.05	Buy Now
	FGH60N60SMD	Bulk		29 Weeks, 4 Days	1	1 $7.01 10 $6.9 100 $4.34 1000 $4.34 10000 $4.34	Buy Now
Mouser Electronics	FGH60N60SMD		5,814			1 $6.18 10 $6.06 100 $3.75 1000 $3.42 10000 $3.42	Buy Now
Newark	FGH60N60SMD	Bulk	1,270		1	1 $4.35 10 $4.35 100 $3.68 1000 $3.68 10000 $3.68	Buy Now
	FGH60N60SMD	Bulk	1,235		1	1 $4.21 10 $4.21 100 $3.56 1000 $3.56 10000 $3.56	Buy Now
Rochester Electronics	FGH60N60SMD		163		1	1 $3.32 10 $3.32 100 $3.12 1000 $2.82 10000 $2.82	Buy Now

TME	FGH60N60SMD		288		1	1 $5.79 10 $4.9 100 $4.39 1000 $4.3 10000 $4.3	Buy Now
Richardson RFPD	FGH60N60SMD				450	1 - 10 - 100 - 1000 $2.99 10000 $2.99	Buy Now
Avnet Asia	FGH60N60SMD			20 Weeks	450	1 - 10 - 100 - 1000 $3.1013 10000 $2.94815	Buy Now
Avnet Silica	FGH60N60SMD			21 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip One Stop	FGH60N60SMD	Tube	80			1 $5.86 10 $5.53 100 $3.18 1000 $3.18 10000 $3.18	Buy Now
Chip-Germany GmbH	FGH60N60SMD		218			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	FGH60N60SMD		300	22 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	FGH60N60SMD		250			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	FGH60N60SMD		250			1 - 10 - 100 $3.27 1000 $2.95 10000 $2.82	Buy Now
New Advantage Corporation	FGH60N60SMD		240		1	1 - 10 - 100 $12.52 1000 $11.58 10000 $11.58	Buy Now

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60N60 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
60N60		IXYS	Ultra-low Vce(sat) IGBT		Original	PDF

60N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
60n6 Abstract: 60N60 IC tl 072 IC100 60N60U1 Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	60N60U1 ISOPLUS247TM IC100 60n6 60N60 IC tl 072 IC100 60N60U1	PDF
MOSFET 60n60 Abstract: 60N60 transistor 60N60 TAB 429 H Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H	PDF
60N60C2 Abstract: ixgh60n60c2 Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2	PDF
IXGN60N60C2 Abstract: 60N60C2 60N60C2D1 ixgn60N60 IXGN60N60C2D1 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D Text: Advance Technical Data HiPerFASTTM IGBT with Diode VCES IXGN 60N60C2 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) E Symbol Test Conditions V CES TJ = 25°C to 150°C D1 E Maximum Ratings 600 VCGR TJ = 25°C to 150°C; RGE = 1 MW = 600 V = 75 A	Original	60N60C2 IXGN60N60C2D1 OT-227B, IC110 2x61-06A IXGN60N60C2 60N60C2 60N60C2D1 ixgn60N60 IGBT 60N60C2D1 siemens igbt siemens igbt 75a high current igbt 60N60C2D	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 O-264 PLUS247 2x61-06A	PDF
siemens igbt 75a Abstract: PLUS247 Text: Advance Technical Data HiPerFAST TM IGBT with Diode IXGK 60N60C2D1 VCES IXGX 60N60C2D1 IC25 VCE sat C2-Class High Speed IGBTs tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	60N60C2D1 IC110 2x61-06A siemens igbt 75a PLUS247	PDF
IXGR60N60C2 Abstract: No abstract text available Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) ISOPLUS247 2x61-06A IXGR60N60C2	PDF
60-06A Abstract: 60N60C2D1 60N60C2D IF110 PLUS247 Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60N60C2D1 IC110 IF110 O-264 0-06A 60-06A 60N60C2D IF110 PLUS247	PDF
60N60C2 Abstract: gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1 Text: HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60C2 IXGR 60N60C2D1 Lightspeed 2TM Series Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.7 V = 35 ns Preliminary Data Sheet IXGR_C2 IXGR_C2D1 Symbol Test Conditions Maximum Ratings	Original	ISOPLUS247TM 60N60C2 60N60C2D1 IC110 IF110 IXGR60N60C2D1) 2x61-06A 60N60C2 gr60n60 IXGR60N60C2D1 siemens igbt 75a 60N60C2 DI GR60N60C2 60N60 ISOPLUS247 IF110 GR60N60C2D1	PDF
60n60 igbt Abstract: ic 307 ex 60N60 Text: Ultra-Low VCE sat IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	60N60 OT-227B 60n60 igbt ic 307 ex 60N60	PDF
IXGH50N60BD1-P1 Abstract: ISOPLUS247TM 60N60U1 Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A	PDF
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 PLUS247 E153432 IC110 2x61-06A	PDF
60N60C2D1 Abstract: No abstract text available Text: IXGK 60N60C2D1 VCES IXGX 60N60C2D1 I C25 VCE sat C2-Class High Speed IGBTs tfi(typ) HiPerFASTTM IGBT with Diode Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	60N60C2D1 IC110 O-264 IF110 PLUS247 0-06A	PDF

60n60b Abstract: PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A Text: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C	Original	ISOPLUS247TM 60N60B2 60N60B2D1 IC110 2x61-06A 60n60b PLUS247 IXGR60N60B2 SiEMENS 3 leads EC 350 2x61-06A	PDF
60N60B2D1 Abstract: ixgk60n60b2d1 PLUS247 ixgx60n60b2d1 Text: Advance Technical Data HiPerFAST TM IGBT with Diode Optimized for 10-25 kHz hard switching and up to 100 kHz resonant switching IXGK 60N60B2D1 VCES IXGX 60N60B2D1 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600	Original	60N60B2D1 IC110 2x61-06A ixgk60n60b2d1 PLUS247 ixgx60n60b2d1	PDF
MOSFET 60n60 Abstract: IXFN SOT227 Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	60N60 OT-227 E153432 MOSFET 60n60 IXFN SOT227	PDF
Untitled Abstract: No abstract text available Text: Low VCE sat IGBT with Diode IXGR 60N60U1 ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Preliminary data Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW 600	Original	60N60U1 ISOPLUS247TM IC100	PDF
Untitled Abstract: No abstract text available Text: □ IXYS Advanced Technical Information IXFN 60N60 HiPerFET Power MOSFETs Single Die M OSFET VDSS ^D25 D DS on = 600 V = 60 A = 75 mQ N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test C onditions V DSS Td = 25°C to 150°C	OCR Scan	60N60	PDF
3580J Abstract: No abstract text available Text: Ultra-Low VCE sat IGBT ixg n 60N60 VCES ^C 25 VCE(sat) u Ë oE Test Conditions V «s T, = 25”C to 150°C 600 VcOR ^ 600 V v GES v GEM Continuous ±20 V Transient ±30 V 'c 2 5 Tc =25«C 100 A Tc = 90°C 60 A 200 A l CM = 1 0 0 e 0.8 v CES A 'c 9 0 Maximum Ratings	OCR Scan	60N60 OT-227B, IXGN6QN60 3580J	PDF
60N60 Abstract: No abstract text available Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous	OCR Scan	60N60 60N60 O-247 O-268 O-264 1999IXYS	PDF
ixgn60n60 Abstract: No abstract text available Text: H Î Y Y ^JLsIk»!? flHVw AUltra-Low VCE sat IGBT ixgn vCES 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 MQ 600 V v GES Continuous	OCR Scan	60N60 OT-227BminiBLOC ixgn60n60	PDF
60N60 Abstract: G 60N60 Text: ID1XYS Ultra-Low VCE sat IGBT IXGH 60N60 v v CES ^C25 Symbol Test Conditions Maximum Ratings v*C E S v CGR Tj = 25°C to 150°C 600 V ^ = 25DC to 150°C; RGE = 1 M£2 600 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C, limited by leads 75	OCR Scan	60N60 O-247 60N60 G 60N60	PDF
ixgh 1500 Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•	OCR Scan	10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a	PDF

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60N60 Search Results

60N60 Price and Stock

PanJit Group PJMD360N60EC_L2_00001

PanJit Group PJMF360N60EC_T0_00001

PanJit Group PJMP360N60EC_T0_00001

onsemi FCPF260N60E

onsemi FGH60N60SMD

60N60 Datasheets (1)

60N60 Datasheets Context Search

60n6

MOSFET 60n60

60N60C2

IXGN60N60C2

Untitled

siemens igbt 75a

IXGR60N60C2

60-06A

60N60C2

60n60 igbt

IXGH50N60BD1-P1

Untitled

Untitled

60N60C2D1

60n60b

60N60B2D1

MOSFET 60n60

Untitled

Untitled

3580J

60N60

ixgn60n60

60N60

ixgh 1500