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    38N60 Search Results

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    38N60 Price and Stock

    Vishay Siliconix SIHP38N60E-GE3

    MOSFET N-CH 600V 43A TO220AB
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    DigiKey SIHP38N60E-GE3 Tube 914 1
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    IXYS Corporation IXGH38N60

    IGBT 600V 76A 200W TO247AD
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    Microchip Technology Inc APT38N60BC6

    MOSFET N-CH 600V 38A TO247
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    Mouser Electronics APT38N60BC6 34
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    Microchip Technology Inc APT38N60BC6 Tube 26 Weeks
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    TME APT38N60BC6 1
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    NAC APT38N60BC6 Tube 59
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    Avnet Silica APT38N60BC6 28 Weeks 90
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    Master Electronics APT38N60BC6
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    IXYS Corporation IXGH38N60U1

    IGBT 600V 76A 200W TO247AD
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    NXP Semiconductors N74F38N,602

    IC GATE NAND 4CH 2-INP 14DIP
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    Rochester Electronics N74F38N,602 3,517 1
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    38N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    robot control

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES I C25 VCE(sat) = 600 V = 76 A = 1.8 V Combi Pack Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient


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    38N60U1 O-247 robot control PDF

    38N60

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 38N60 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 76 A IC90 T C = 90°C


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    38N60 O-247 38N60 PDF

    38N60U1

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 600 V = 76 A = 1.8 V Combi Pack Advanced Technical Information Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600


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    38N60U1 O-247 38N60U1 PDF

    robot control

    Abstract: servo motors MJ800
    Text: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 TC = 25°C 76 A I C90 TC = 90°C 38 A I CM TC = 25°C, 1 ms


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    38N60 O-247 robot control servo motors MJ800 PDF

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


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    PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 PDF

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 PDF

    38N60

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 38N60 VCES IC25 v CE(sat) Symbol Test Conditions VCES T, = 25°C to 150°C 600 V v CGR T. = 25°C to 150°C; RGE = 1 600 V v Ges Continuous ±20 V v GEM Transient ±30 V Maximum Ratings 'c * Tc = 25°C 76 A ' c 90 Tc = 90°C 38


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    38N60 O-247 B2-83 38N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH 38N60U1 Ultra-Low VCE sat IGBT with Diode Symbol ^C25 v Maximum Ratings Test Conditions VCES ^ 600 V VCGB Td = 25°C to 150°C; RGE = 1 M il 600 V VGES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A 152 A ' cm = 25°C to 150°C


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    38N60U1 O-247 B2-85 PDF

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


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    10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a PDF

    38N60

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms


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    38N60 O-247 4bflb22b 38N60 PDF

    S1443

    Abstract: UPS es 700 j3076
    Text: Ultra-Low V IG B T IXGH 38N60 VCES 'c25 = 600 V = 76 A V CE sa„ = 1 -8 V & Symbol Test C onditions V CES T j =25°C to150°C Vca* T, vQES v GEM ^C25 ^C90 Maximum Ratings 600 V 600 V Continuous ±20 V Transient +J30 V Tc = 2 5 'C 76 A Tc =90°C 38 A 152 A


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    38N60 to150 O-247AD O-247 S1443 UPS es 700 j3076 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ultra-Low VCE sat IGBT with Diode IXGH 38N60U1 VCES IC25 v CE(sat) = 600 V = 76 A = 1.8 V ?c Combi Pack G O E Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR ^ = 25°C to 150°C; RGE = 1 Mn 600 V Maximum Ratings VGES Continuous ±20 V v Transient


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    38N60U1 O-247 40A/ns PDF

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


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    30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh PDF

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI PDF

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


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    O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B PDF

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B PDF

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


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    10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A PDF

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


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    DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100 PDF

    12n60u

    Abstract: sta 750 tic 263a
    Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH


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    PDF

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


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    AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 PDF