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    13N10 Search Results

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    13N10 Price and Stock

    onsemi FQD13N10LTM

    MOSFET N-CH 100V 10A DPAK
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    DigiKey FQD13N10LTM Digi-Reel 6,584 1
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    TME FQD13N10LTM 1
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    Richardson RFPD FQD13N10LTM 5,000
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    New Advantage Corporation FQD13N10LTM 52,500 1
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    onsemi FQD13N10TM

    MOSFET N-CH 100V 10A DPAK
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    DigiKey FQD13N10TM Cut Tape 6,054 1
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    FQD13N10TM Digi-Reel 6,054 1
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    FQD13N10TM Reel 5,000 2,500
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    Mouser Electronics FQD13N10TM 9,505
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    Newark FQD13N10TM Reel 2,500
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    Richardson RFPD FQD13N10TM 2,500
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    Avnet Asia FQD13N10TM 16 Weeks 5,000
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    onsemi FQP13N10

    MOSFET N-CH 100V 12.8A TO220-3
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    Rochester Electronics FQP13N10 558 1
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    Flip Electronics FQP13N10 784
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    onsemi NTB13N10G

    MOSFET N-CH 100V 13A D2PAK
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    onsemi FQP13N10L

    MOSFET N-CH 100V 12.8A TO220-3
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    Rochester Electronics FQP13N10L 101 1
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    Find more 13N10 price and stock on Findchips.com

    13N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13N100

    Abstract: 10N100 13n10
    Text: HiPerFETTM Power MOSFETs VDSS IXFH / IXFM 10N100 IXFH / IXFM 12N100 IXFH 13N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM


    Original     		PDF 10N100 12N100 13N100 13N100 10N100 13n10

    10N100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFT 10 N100 IXFT12 N100 IXFT 13 N100 ID25 1000 V 10 A 1000 V 12 A 1000 V 12.5 A trr £ 250 ns RDS on 1.20 W 1.05 W 0.90 W Preliminary data sheet Symbol Test Conditions


    Original     		PDF IXFT12 10N100 12N100 13N100

    10N100

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C


    Original     		PDF 10N100 12N100 728B1 123B1 728B1 065B1 10N100

    Untitled

    Abstract: No abstract text available
    Text: 13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB13N10 NTB13N10/D

    3000 watts subwoofer circuit diagram

    Abstract: 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 STEREO 200W 6Ω CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M TECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION


    Original     		PDF TK2150 TC2001/TP2150 3000 watts subwoofer circuit diagram 200w subwoofer circuit 12v 60W subwoofer CIRCUIT DIAGRAM IRF530N h bridge stereo amplifier 400W 400W low pass subwoofer circuit diagram 100 watt subwoofer circuit diagram subwoofer audio amplifier circuit diagram 500 watt audio subwoofer "subwoofer amplifiers"

    13n10

    Abstract: 13N10 mosfet NTP13N10
    Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 tpv10 13n10 13N10 mosfet NTP13N10

    TP2350B

    Abstract: mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150B DUAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 GENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS


    Original     		PDF TP2150B TP2150B TP2350B mosfet vn10 TRIPATH TC2001 Tp2350 VN10 VN10 application 13N10 100uF 150v capacitor what is the best speaker wattage and ohms TRIPATH TECHNOLOGY

    13n10

    Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G
    Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 NTP13N10/D 13n10 NTP13N10 13N10 mosfet AN569 NTP13N10G

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF O-247

    RCS01

    Abstract: 13n10l
    Text: IS31LT3948 PFM Mode Boost LED Driver With the External NMOS December 2012 General Description Features The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few


    Original     		PDF IS31LT3948 IS31LT3948 RCS01 13n10l

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12n100

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM


    Original     		PDF 10N100 12N100 13N100 13N100 O-247

    13n10l

    Abstract: SN3948 13n10 RCS01 SS310 DIODE schottky IS31LT3948 IS31LT3948-GRLS2-TR
    Text: IS31LT3948 PFM MODE BOOST LED DRIVER WITH THE EXTERNAL NMOS OCTOBER 2011 GENERAL DESCRIPTION FEATURES The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few


    Original     		PDF IS31LT3948 IS31LT3948 27BSC 13n10l SN3948 13n10 RCS01 SS310 DIODE schottky IS31LT3948-GRLS2-TR

    13n10

    Abstract: 10N100 N100 13N100
    Text: VDSS HiPerFETTM Power MOSFETs IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous Transient ID25 TC = 25°C


    Original     		PDF 10N100 12N100 O-247 O-204 728B1 123B1 13n10 10N100 N100 13N100

    13N10L

    Abstract: No abstract text available
    Text: IS31LT3948 PFM MODE BOOST LED DRIVER WITH THE EXTERNAL NMOS May 2014 GENERAL DESCRIPTION FEATURES The IS31LT3948 is a PFM step-up DC-DC converter designed for driving the white LED arrays for large size LCD panel backlighting applications. It can deliver stable constant output current from a few


    Original     		PDF IS31LT3948 IS31LT3948 13N10L

    13N10

    Abstract: NTP13N10 13N10 mosfet AN569 NTP13N10G
    Text: 13N10 Preferred Device Power MOSFET 13 A, 100 V, N−Channel Enhancement−Mode TO−220 Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTP13N10 O-220 NTP13N10/D 13N10 NTP13N10 13N10 mosfet AN569 NTP13N10G

    C1146

    Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100

    IXYS DS 145

    Abstract: 13N100
    Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS


    OCR Scan     		PDF IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145

    Untitled

    Abstract: No abstract text available
    Text: IXYS HiPerFET Power MOSFETs ^D25 IX F H / IX F M 10 N 1 0 0 1000 V 10 A 1 .2 0 Q IX F H / I X F M 12 N 1 0 0 1000 V 12 A 1 .0 5 Q IX F H 1 3 N 1 0 0 1000 V 1 2 .5 A 0 .9 0 Q N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions


    OCR Scan     		PDF to150 10N100 12N100 13N100 13N100

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs V DSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions Voss V«, Tj = 25°C to 150°C Vos VGSM Continuous T ransient IXFH/IXFM10N100 IXFH/IXFM12 N100 13N100 00 Maximum Ratings Tj = 25°C to 150°C; RGS= 1 M ii


    OCR Scan     		PDF IXFH/IXFM10N100 IXFH/IXFM12 IXFH13N100 10N100 12N100 13N100