12N100A
Abstract: 12n100 IXGH12N100 IXGH12N100A
Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N100
12N100A
O-247AD
Mounti00
IXGH12N100/A
IXGH12N100U/AU1
12N100A
12n100
IXGH12N100
IXGH12N100A
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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IXGH12N100AU1
Abstract: IXGH12N100U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
IXGH12N100AU1
IXGH12N100U1
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12n100
Abstract: No abstract text available
Text: Low VCE sat IGBT High Speed IGBT Symbol Test Conditions VCES IXGH 12N100 IXGH 12N100A Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C
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12N100
12N100A
O-247AD
O-247
IXGH12N100/A
IXGH12N100U/AU1
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack Symbol Test Conditions VCES IXGH 12N100U1 IXGH 12N100AU1 Maximum Ratings VCES TJ = 25°C to 150°C 1000 V TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30
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12N100U1
12N100AU1
O-247AD
IXGH12N100U1
IXGH12N100AU1
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Untitled
Abstract: No abstract text available
Text: IGBT IXGA/IXGP12N100U1 IXGA/12N100AU1 Combi Pack VCES IC25 VCE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
O-220AB
O-263
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IXGA12N100AU1
Abstract: IXGA12N100U1 IXGP12N100AU1 IXGP12N100U1
Text: IGBT IXGA/IXGP12N100U1 IXGA/12N100AU1 Combi Pack VCES IC25 VCE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V Preliminary Data Sheet TO-220AB(IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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IXGA/IXGP12N100U1
IXGA/IXGP12N100AU1
O-220AB
O-263
IXGA12N100AU1
IXGA12N100U1
IXGP12N100AU1
IXGP12N100U1
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200n60
Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40
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PLUS247
20N30
28N30
30N30
40N30
31N60
38N60
41N60
60N60
O-264
200n60
20N30
n60c
50N60
7N60B
IC IGBT 25N120
IC600
80n60
60n60 igbt
25N120
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7n60b
Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3
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AXC-051
AXC-053
AXC-101
AXC-102
AXL-001
AXL-051
AXV-102
142-12io8
142-16io8
19-08ho1
7n60b
35N120u1
ixys dsei 45-12a
DSDI 35-12A
20N80
80n06
80n60
VVY 40-16IO1
IXYS CS 2-12
IXFX 44N80
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12N100
Abstract: No abstract text available
Text: IGBT with Diode Low VCE sat High speed IXGA/IXGP12N100U1 IXGA / IX G P 12N100AU1 Symbol Test Conditions V CES T j = 25°C to 150°C 1000 V v CGR T J, = 25°C to 150°C; Rrc = 1 MQ Gfc 1000 V v GES Continuous ±20 V VGEM Transient ±30 V Tc = 25°C 24 A Tc = 90°C
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IXGA/IXGP12N100U1
12N100AU1
O-220
O-263
12N100
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Untitled
Abstract: No abstract text available
Text: □ I X Y S Low VrP, IGBT with Diode CE sat High Speed IGBT with Diode Combi Pack v CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Maximum Ratings Symbol Test Conditions V v CES V CGR Td = 25°C to 150°C
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12N100U1
12N100AU1
O-247
IXGH12N100U1
IXGH12N100AU1
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Untitled
Abstract: No abstract text available
Text: IXGH 12N100U1 IXGH 12N100AU1 Low VCE sat IGBT with Diode High Speed IGBT with Diode VCES ^C25 V ¥ CE(sat) 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V TO-247 SMD* E Symbol Test Conditions v CES VcOR Td = 25°C to 150°C T j = 25°C to 150°C; RGE = 1 M H VGES v SBB
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12N100U1
12N100AU1
O-247
O-247
-247S
12N100
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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1-20Q
Abstract: AD 483 D 819
Text: □IXYS V CES Low VCE sat IGBT High Speed IGBT IXGH 12 N100 IXGH 12N100A Maximum Ratings Sym bol Test C onditions V CES Td = 25°C to 150°C 1000 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 1000 V v GES v GEM Continuous ±20 V Transient ±30 V ^C25 Tc = 25°C
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N100A
247AD
1-20Q
AD 483
D 819
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Untitled
Abstract: No abstract text available
Text: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q
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IXGH12N100U1
12N100AU1
O-247
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Untitled
Abstract: No abstract text available
Text: v’ Low VCE sat IGBT High speed IGBT Symbol Test Conditions IXGA/IXGP12N100 IXGA/12N100A Maximum Ratings VCES Tj = 25°C to 150°C 1000 V vCGR T, = 25°C to 150°C; RGE = 1 MO 1000 V v GES v GEM Continuous ±20 V Transient ±30 V 24 A C25 Tc = 25°C
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IXGA/IXGP12N100
IXGA/IXGP12N100A
O-220
O-263
O-220AB
12N100/.
12N100U1/AU1
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7N60B
Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28
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30N30
28N30
4QN30
31N60
38N60
41N60
60N60
200N60
25N100A
7N60B
65A3
40N60A
IXGA 12N60C
200n60
ixgh 1500
IXG IGBT
ixgh
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Untitled
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet IGBT S ym bol IXGA/IXGP12N100 IXGA/12N100A T e st C o n d itio n s V CES ^C25 V CE sat 1000 V 1000 V 24 A 24 A 3.5 V 4.0 V M a xim u m R a tin g s Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 1 M ß 1000 1000 V Continuous
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IXGA/IXGP12N100
IXGA/IXGP12N100A
O-22QAB
O-263
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Untitled
Abstract: No abstract text available
Text: □ 1XYS Preliminary Data Sheet IGBT IXG A /IXG P12N 100U 1 IXGA/IXG 12N100AU1 Combi Pack Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE= 1 Mi2 1000 V Continuous ±20 V V GEM Transient +30 V ^C25 Tc = 25°C 24 A ^C90
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P12N100AU1
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4453 smd
Abstract: to247 f tab 4453
Text: v Low c E s 3 t IGBT ^ High Speed IGBT 1000 V 24 A IXGH 12 N10O 12N100A 1000 V 24 A . Symbol Test Conditions V * CES T, = 25°C to 150°C 1000 V V C6R ^ = 25°C to 150°C; RGE = 1 Mfi 1000 V v GES Continuous ±20 V vt g e m Transient ±30 V ^C25 T c = 25°C
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IXGH12N100A
O-247
TQ-247SMD
O-247AD
4453 smd
to247 f
tab 4453
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SMD diode b24
Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64
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12N100
O-220
O-263
O-247
O-247
T0-204
30N30/.
40N30/.
31N60
SMD diode b24
diode b26
smd DIODE B28
20N60BU1
smd diode b23
60n60 igbt smd
B292
12n60c
SMD diode B2
b26 diode
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ixgh 1500
Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•
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10N60
20N60
31N60
30N60
38N60
40N60
60N60
32N60BS
40N60A
ixgh 1500
25N120
200n60
60n60 igbt smd
10N60A
30N60A
.25N100
20n60a
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet IGBT Sym bol IXGA/IXGP12N100 IXGA/12N100A T est C o n d itio n s = 25°C to 150°C; R ^ C 25 1000 V 1000 V 24 A 24 A V CE sat 3.5 V 4.0 V M axim um R atings Td = 25°C to 150°C T, V CES 1000 = 1 MO 1000 Continuous ±20 Transient
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IXGA/IXGP12N100
IXGA/IXGP12N100A
O-263
T0-220AB
O-263AA
genera06
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120n60b
Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *
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O-220
O-263
O-247
28N30
30N30
40N30
2N100
8N100
6N100
12N10Q
120n60b
40N30BD1
32N50
7n60c
20N60BU1
40N60A
B-2160
200n60
12n60c
IXGH24N50B
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