Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested
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SiA519EDJ
SC-70-6
SiA533EDJ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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P5NK100Z
Abstract: W5Nk100 w5nk100z F5NK100Z STP5NK100Z L 10850 STF5NK100Z STW5NK100Z 10850
Text: STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type VDSS @TJMAX RDS(on)max ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A
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STP5NK100Z,
STF5NK100Z
STW5NK100Z
O-220,
O-220FP,
O-247
STP5NK100Z
O-220FP
P5NK100Z
W5Nk100
w5nk100z
F5NK100Z
STP5NK100Z
L 10850
STF5NK100Z
STW5NK100Z
10850
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W5NK100Z
Abstract: No abstract text available
Text: STP5NK100Z, STF5NK100Z STW5NK100Z N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3 Power MOSFET Features Type VDSS @TJMAX RDS(on)max ID STF5NK100Z 1000 V < 3.7 Ω 3.5 A STP5NK100Z 1000 V < 3.7 Ω 3.5 A STW5NK100Z 1000 V < 3.7 Ω 3.5 A
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STP5NK100Z,
STF5NK100Z
STW5NK100Z
O-220,
O-220FP,
O-247
STP5NK100Z
O-220FP
W5NK100Z
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STP5NB100
Abstract: STP5NB100FP
Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP5NB100
STP5NB100FP
O-220/TO-220FP
STP5NB100
STP5NB100FP
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STP5NB100
Abstract: STP5NB100FP AC to DC smps circuit diagram schematic diagram smps supply SWITCHING WELDING SCHEMATIC BY MOSFET
Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP5NB100
STP5NB100FP
O-220/TO-220FP
STP5NB100
STP5NB100FP
AC to DC smps circuit diagram
schematic diagram smps supply
SWITCHING WELDING SCHEMATIC BY MOSFET
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STP5NB100FP
Abstract: STP5NB100
Text: STP5NB100 STP5NB100FP N-CHANNEL 1000V - 2.4Ω - 5A TO-220/TO-220FP PowerMesh MOSFET TYPE n n n n n VDSS RDS on ID STP5NB100 1000 V < 2.7 Ω 5A STP5NB100FP 1000 V < 2.7 Ω 5A TYPICAL RDS(on) = 2.4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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STP5NB100
STP5NB100FP
O-220/TO-220FP
STP5NB100FP
STP5NB100
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Untitled
Abstract: No abstract text available
Text: Standard Power MOSFET IXTH / IXTM 5N100 IXTH / IXTM 5N100A VDSS ID25 RDS on 1000 V 1000 V 5A 5A 2.4 Ω 2.0 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000
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5N100
5N100A
O-204
O-247
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PLUS264
Abstract: 30n100 IXTN 85 N 20 "SOT-227 B" dimensions
Text: Power MOSFETs with IXTB 30N100L IXTN 30N100L Extended FBSOA VDSS = 1000 V ID25 = 30 A RDS on ≤ 0.45 Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings IXTB IXTN PLUS264 (IXTB) V DSS TJ = 25°C to 150°C 1000 1000 V VDGR
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30N100L
PLUS264
PLUS264
30n100
IXTN 85 N 20
"SOT-227 B" dimensions
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM
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01N100
100mA
O-251
728B1
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STD2NK100Z
Abstract: No abstract text available
Text: STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID PTOT STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STU2NK100Z
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STD2NK100Z
STP2NK100Z
STU2NK100Z
O-220,
STP2NK100Z
O-220
STD2NK100Z
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 W RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V
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1N100
O-263
O-220AB
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2NK10
Abstract: STU2NK100Z 2NK100Z STD2NK100Z STP2NK100Z JESD97
Text: STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 Ω, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on max ID PTOT STD2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W STP2NK100Z 1000 V < 8.5 Ω 1.85 A 70 W < 8.5 Ω
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STD2NK100Z
STP2NK100Z
STU2NK100Z
O-220,
STP2NK100Z
O-220
2NK10
STU2NK100Z
2NK100Z
STD2NK100Z
JESD97
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2N100
Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient
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2N100
O-220AB
O-263
125OC
Figure10.
2N100
FIGURE10
125OC
IXTA2N100
IXTP2N100
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM
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1N100
O-263
O-220AB
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13n10
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS
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IXFT10N100
IXFT12N100
IXFT13N100
10N100
12N100
13N100
13n10
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5n100
Abstract: 5N100A
Text: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM
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N100A
O-247
O-204
O-204
O-247
4bflb52b
5n100
5N100A
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ixth12n100
Abstract: 12n100 3055P
Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000
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10N100
12N100
Cto150
O-247AD
O-204
O-204
ixth12n100
3055P
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78737
Abstract: No abstract text available
Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss
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IXTK21N100
IXTN21N100
O-264
OT-227
E153432
ab22b
00D4D0S
78737
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C289
Abstract: IXTM5N100A
Text: Standard Power MOSFET ix t h / ix t m s n io o IXTH/IXTM 5 N100A VD S S ^ D25 1000 V 1000 V 5A 5A D D S o n 2.4 £1 2.0 Q N-Channel Enhancement Mode Symbol Maximum Ratings Test Conditions V v oss T j = 25°C to 150“C 1000 V VDGR T j = 25°C to 150°C; RGS = 1 M il
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N100A
O-247
O-204
O-247
C2-88
IXTH5N100
1XTM5N100
C2-89
C289
IXTM5N100A
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25
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IXTA2N100
IXTP2N100
Cto150
O-263
O-22QAB
1999IXYS
C2-76
C2-77
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IXYS DS 145
Abstract: 13N100
Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS
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IXFT10N100
IXFT12N100
13N100
10N100
12N100
13N100
IXYS DS 145
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IXTH5N100A
Abstract: gs 1117 ax
Text: inixY S Standard Power MOSFET IXTH/IXTM 5N100 IXTH/IXTM 5N100A VDSS ^D25 1000 V 1000 V 5A 5A p DS on 2.4 Q 2.0 Q, N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS ^ =25°C to150°C 1000 V VoO R ^ = 2 5 °C to 1 5 0 °C ;R GS= 1 MQ 1000
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5N100
5N100A
to150
O-247
O-204
O-204
O-247
IXTH5N100
IXTM5N100
IXTH5N100A
gs 1117 ax
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