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Walsin Technology Corporation 0201N100J250CT CAP CER 10PF 25V C0G/NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100J250CT	Cut Tape	144,696		1	1 $0.1 10 $0.014 100 $0.0063 1000 $0.00375 10000 $0.00314	Buy Now
	0201N100J250CT	Digi-Reel	144,696		1	1 $0.1 10 $0.014 100 $0.0063 1000 $0.00375 10000 $0.00314	Buy Now
	0201N100J250CT	Reel	105,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	0201N100J250CT		40,294			1 $0.1 10 $0.002 100 $0.001 1000 $0.001 10000 $0.001	Buy Now
TME	0201N100J250CT		42,800		100	1 - 10 - 100 $0.01019 1000 $0.00328 10000 $0.00178	Buy Now
Avnet Asia	0201N100J250CT			10 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Walsin Technology Corporation 0201N100J500CT CAP CER 10PF 50V C0G/NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100J500CT	Cut Tape	88,314		1	1 $0.1 10 $0.02 100 $0.009 1000 $0.00531 10000 $0.00444	Buy Now
	0201N100J500CT	Digi-Reel	88,314		1	1 $0.1 10 $0.02 100 $0.009 1000 $0.00531 10000 $0.00444	Buy Now
	0201N100J500CT	Reel	75,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	0201N100J500CT		16,056			1 $0.1 10 $0.008 100 $0.002 1000 $0.002 10000 $0.002	Buy Now
TME	0201N100J500CT				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ameya Holding Limited	0201N100J500CT		75,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip One Stop	0201N100J500CT	Cut Tape	15,000			1 - 10 - 100 $0.00768 1000 $0.00131 10000 $0.000846	Buy Now
Walsin Technology Corporation 0201N100G250CT CAP CER 10PF 25V C0G/NP0 0201
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	0201N100G250CT	Cut Tape	29,900		1	1 $0.1 10 $0.028 100 $0.0127 1000 $0.0075 10000 $0.00627	Buy Now
	0201N100G250CT	Digi-Reel	29,900		1	1 $0.1 10 $0.028 100 $0.0127 1000 $0.0075 10000 $0.00627	Buy Now
	0201N100G250CT	Reel	15,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	0201N100G250CT		10,250			1 $0.1 10 $0.007 100 $0.004 1000 $0.002 10000 $0.002	Buy Now
TME	0201N100G250CT				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXTY01N100D MOSFET N-CH 1000V 400MA TO252AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTY01N100D	Tube	2,199		1	1 $4.91 10 $4.91 100 $2.43043 1000 $1.89477 10000 $1.78663	Buy Now
Vishay Dale NTHS0603N01N1003JE THERM NTC 100KOHM 3964K 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTHS0603N01N1003JE	Reel	1,725		2,000	1 - 10 - 100 - 1000 - 10000 $3.9623	Buy Now
	NTHS0603N01N1003JE	Cut Tape	1,725		1	1 $6.42 10 $6.42 100 $4.6004 1000 $4.08442 10000 $4.08442	Buy Now
	NTHS0603N01N1003JE	Digi-Reel	1,725		1	1 $6.42 10 $6.42 100 $4.6004 1000 $4.08442 10000 $4.08442	Buy Now
RS	NTHS0603N01N1003JE	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $1.27	Get Quote

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01N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
01N100D Abstract: high voltage mosfet n-channel Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	01N100D O-220AB high voltage mosfet n-channel	PDF
01N100D Abstract: 98809b ON 534 TO252 01N1 Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000	Original	01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1	PDF
521 MOSFET Abstract: 01N100 237 521 02 Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20	Original	01N80 100mA 01N100 O-251 O-252 728B1 521 MOSFET 01N100 237 521 02	PDF
01n100 Abstract: 4506v iXTY01N100 Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20	Original	01N100 100mA 728B1 01n100 4506v iXTY01N100	PDF
Untitled Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V	Original	01N80 100mA 01N100 O-251 728B1	PDF
01N80 Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	01N80 01N100 01N100 O-251 HDM235	PDF
01N100 Abstract: TO-251 weight TO252 rthjc TO-251 Outline Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	01N100 100mA 01N100 TO-251 weight TO252 rthjc TO-251 Outline	PDF
Untitled Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 1000 V 1000 V Continuous ±20 V VGSM	Original	01N100 100mA O-251 728B1	PDF
IXTD24P20 Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10 Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M	Original	02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10	PDF
01N100 Abstract: MOSFET 546 TO-251 weight 237 521 02 521 MOSFET Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	01N100 100mA 728B1 01N100 MOSFET 546 TO-251 weight 237 521 02 521 MOSFET	PDF
Untitled Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20	Original	01N100 01N100 100mA O-251 O-252 405B2	PDF
08GS Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous	Original	01N100 01N100 100mA O-251 O-252 08GS	PDF
Untitled Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N100 IXTY 01N100 VDSS ID25 = 1000 V = 100mA = 80 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	01N100 100mA O-251 O-25nditions,	PDF
01N80 Abstract: 01N100 TO252 rthjc TO-251 Outline Text: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800	Original	01N80 100mA 01N100 O-251 O-252 01N80 01N100 TO252 rthjc TO-251 Outline	PDF

Untitled Abstract: No abstract text available Text: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR	OCR Scan	01N80 01N100 O-251	PDF
Untitled Abstract: No abstract text available Text: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V	OCR Scan	01N80 01N100 O-251	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D	PDF
Untitled Abstract: No abstract text available Text: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800	OCR Scan	01N80 01N100 O-251	PDF
IRFP 260 M Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240 Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH	OCR Scan	67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240	PDF
IRFP 640 Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100 Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140	OCR Scan	135XTP 01N100 1N100 2N100 2N100 100X2 01N100X3 O-251, O-220AB IRFP 640 IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100	PDF
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50	PDF

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01N100 Search Results

01N100 Price and Stock

Walsin Technology Corporation 0201N100J250CT

Walsin Technology Corporation 0201N100J500CT

Walsin Technology Corporation 0201N100G250CT

Littelfuse Inc IXTY01N100D

Vishay Dale NTHS0603N01N1003JE

01N100 Datasheets Context Search

01N100D

01N100D

521 MOSFET

01n100

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01N80

01N100

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IXTD24P20

01N100

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08GS

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01N80

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100N055

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IRFP 260 M

IRFP 640

11n80

DSE 130 -06A