Untitled
Abstract: No abstract text available
Text: aixYs Dimensions in inch and [mm] 1 " = 25.4 mm 0.04Q[l .02] KS7 G O.MflQ.023 0.259(6.58] 0.021 [0.52] {g U o JX53 G t 0.029 [0.7+] — - 0.173 ¡4.39] 0.048 [1 . 2 ii SQ , U 3 961 :.m i 0.35' :391] 1999IXYS All rights reserved J- 7 Dimensions in inch and [mm] (1" = 25.4 mm)
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1999IXYS
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7N60B
Abstract: No abstract text available
Text: nixYS AdvancedTechnical Information HiPerFAST IGBT V ¥ ces IXGA 7N60B IXGP 7N60B 600 V 14 A 1.5 V 150 ns ^C25 VCE sat typ % Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 600 V V CGR T,J = 25°C to 150°C; RGE = 1 MD 600 V VGES Continuous
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7N60B
7N60B
O-220AB
O-263
O-220
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IXFN180N20
Abstract: No abstract text available
Text: BIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 180N20 v DSS ^D25 P DS on *rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS Tj =25°Cto150°C 200 V VD0R Tj = 25° C to 150° C; RGS= 1 M ii
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IXFN180N20
Cto150
OT-227
E153432
IXFN180N20
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Untitled
Abstract: No abstract text available
Text: VDSS HiPerFET Power MOSFETs IXFH/IXFT/IXFX14N100 IXFH/IXFT/IXFX15N100 p ^D25 DS on 1000 V 14 A 0.75 Q 1000 V 15 A 0.70 ß trr <200 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Preliminary data sheet Symbol Test Conditions v TJ Maximum Ratings
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IXFH/IXFT/IXFX14N100
IXFH/IXFT/IXFX15N100
14N100
15N100
O-247
to150
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Untitled
Abstract: No abstract text available
Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25
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IXTA2N100
IXTP2N100
Cto150
O-263
O-22QAB
1999IXYS
C2-76
C2-77
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60N60
Abstract: No abstract text available
Text: IXGH 60N60 IXGK 60N60 IXGT 60N60 Ultra-Low VCE sat IGBT VCES ^C25 V C E(sat) V A V 600 75 1.6 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES T j = 2 5 °C to 150°C 600 V Vcon T,J = 2 5 ° C to 15 0 °C; R„_ be = 1 MO 600 V v GES Continuous
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60N60
60N60
O-247
O-268
O-264
1999IXYS
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Untitled
Abstract: No abstract text available
Text: a ix Y S Advanced Technical Information IXGH 32N60CD1 VCES IC25 HiPerFAST IGBT with Diode V CE SAT typ Light Speed Series Symbol t f1(typ) Test Conditions Maximum Ratings =25° C to 150° C 600 V T, : 25°C to 150°C: FL 600 V Continuous ±20 V Transient
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32N60CD1
O-247AD
O-247AD
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IXFX120N20
Abstract: No abstract text available
Text: nixYs HiPerFET Power MOSFETs IXFX120N20 VDSS = lD25 = ^DS on = Single M O S F E T Die ^ trr <250 ns 9D Preliminary data sheet 200V 120A v p « Symbol Test Conditions V vDGB Tj =25°Cto150°C Tj = 25° C to 150° C; RGS = 1 Mi2 200 200 V V v as vGSM Continuous
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IXFX120N20
Cto150
IXFX120N20
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DWEP
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED Chips VRRM min Type mA u TJ= 12S-C v .-w v * , mA DWEP 27 -02 DWEP 37 -02 DWEP 77 -02 200 100 150 500 0.2 0,35 0.65 5 11 20 54 91 244 85 70 70 DWEP DWEP DWEP DWEP DWEP DWEP DWEP DWEP 8 12 15 23 25 35 55 75 -06 -06 -06 -06
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12S-C
DWEP
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60N60A
Abstract: c5021-0
Text: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90
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50N60AU1
O-264
JEDECTO-264AA
100-C
50N60AU1
60N60A
c5021-0
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Untitled
Abstract: No abstract text available
Text: FRED, Rectifier Diode and Thyristor Chips in Planar Design Fast Recovery Epitaxial Diodes FRED Rectifier Diode and Thyristor Chips Power switches (IGBT, MOSFET, BJT, GTO) for applications in electronics are only as good as their associated free-wheeling
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1999IXYS
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30N60BD
Abstract: No abstract text available
Text: nixYS Advanced Technical Information HiPerFAST IGBT with Diode IXGH 30N60BD1 IXGT 30N60BD1 ^fi typ Symbol Test Conditions VCEs Tj = 25°Cto 150UC 600 V v CGB T,J = 25cC to 150°C ;R Cat =1 MU 600 V v G ES Continuous +20 V VG EM Transient ±30 V ^C25 Tc =25°C
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30N60BD1
30N60BD1
150UC
O-268
O-247
15BSC~
30N60BD
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IXYS DS 145 12A
Abstract: IXYS DS 145 ld12a
Text: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS
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IXFH15N80Q
IXFT15N80Q
O-247AD
O-268
00A/M
1999IXYS
IXYS DS 145 12A
IXYS DS 145
ld12a
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IXTN 36N50 C
Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
79N20
35N30
40N30
IXTN 36N50 C
ixys ixth 21N50
mosfet irfp 250 N
c226
C278
C2100
13N110
C258
IRFP
ixys ixtn 36n50
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IXFK110N20
Abstract: 20n20 IXFN120N20 IXFK120N20
Text: •1IXYS_ ^ m ^ VDSS HiPerFET Power MOSFET IXFN 120N20 IXFN 110N20 IXFK 120N20 IXFK 110N20 Single MOSFET Die Symbol Test Conditions Maximum Ratings IXFK IXFN IXFN 120 110 120 IXFK 110 v DSS TO-264 AA IXFK ?D VoCR Tj = 25°C to 150°C
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IXFN120N20
IXFN110N20
IXFK120N20
IXFK110N20
O-264
20N20
20n20
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IC2560-0
Abstract: No abstract text available
Text: DIXYS IGBT with Diode IXSN 62N60U1 VCES 600 V 90 A 2.5 V IC25 v CE sat Short Circuit SOA Capability G é i t> E Maximum Ratings Symbol Test Conditions VCES Tj = 25° C to 150° C 600 V vCGR T,J = 25° C to 150°C; R(a„c = 1 Mi2 600 A VGES Continuous ±20
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62N60U1
OT-227B,
IC2560-0
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q5t3
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60AU1 ’ CES ^C25 v CE sat tfi Symbol Test Conditions V CES T j = 2 5 ; C to 1 5 0 C 600 V VCGR T,J = 25° C to 150° C; FLC = 1 Mi2 Gt 600 V V GES Continuous ±20 V VGEM Transient +30 V ^C2S 'c90 Maximum Ratings T c = 2 5 °C
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32N60AU1
O-247
one100C
q5t3
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Untitled
Abstract: No abstract text available
Text: Ultra-Low VCE sat IGBT VCES IXGN 60N60 ^C25 VCE(sat) 600 V 100 A 1.6 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VcES T j =2 5°C to 15 0 cC 600 V v CGR T,J = 25°C to 150°C; R(jfc = 1 MO 600 V VGES Continuous ±20 V VGEM Transient +30
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60N60
OT-227B
OT-227B
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Untitled
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs ix f n 200N07 Maximum Ratings Tj = 25° C to 150° C Tj = 25°C to 150°C; RGS= 1 Mi2 Va, VGSM ^0130 U EAR 70 70 V V Continuous Transient ±20 ±30 V V Tc= 25° C Tc= 130° C, limited by external leads Tc= 25° C, pulse width limited by TJM
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200N07
OT-227
E153432
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24N60AU
Abstract: ixsh24n60au1 24n60au1 TO-247 weight
Text: DIXYS HiPerFAST IGBT with Diode IXSH 24N60U1 IXSH 24N60AU1 v CES ^C25 VCE sat 600 V 600 V 48 A 48 A 2.2 V 2.7 V Short Circuit SOA Capability Tj = 25° C to 150° C Tj = 25°C to 150°C; RGE= 1 Mi2 600 600 V V V6ES v GEM Continuous Transient 120 ±30 V
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24N60U1
24N60AU1
IXSH24N60AU1
1999IXYS
24N60AU
ixsh24n60au1
TO-247 weight
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2SN100
Abstract: 25N100
Text: IGBT IXGH 25N100 IXGH 25N100A L O W V CE S* High speed Maximum Ratings Symbol Test Conditions VCES T j = 25° C to 150° C 1000 V T,J = 25° C to 150° C; FLr bt: = 1 M ft 1000 V v* GES Continuous +20 V VGEM Transient ±30 V ^C25 Tc =25°C 50 A ^C90 T c = 90° C
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25N100
25N100A
O-247
2SN100
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Untitled
Abstract: No abstract text available
Text: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20
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50N60AU1
25cCto
O-247
50N80AU1
1999IXYS
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Untitled
Abstract: No abstract text available
Text: n ixY S Hi Per FAST IGBT IXGN 50N60B V CES [ C25 vCE sat Maximum Ratings Symbol Test Conditions V CES T j = 25° C to 150° C 600 V Vcc T, 600 V v GES V GEM Continuous 120 V T ransient -t30 V ^C25 Tc = 25°C 75 A '« O Tc =90°C 50 A ^CM Tc = 25° C, 1 ms
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50N60B
OT-227B,
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IXFK34N80
Abstract: No abstract text available
Text: nixYS Advanced Technical Information HiPerFET Power MOSFETs IXFK 34N80 IXFX 34N80 Test Conditions V DSS VDon Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 Mi2 800 800 V V Vas v GSM Continuous Transient ±20 ±30 V V Tc = 25° C MOSFET chip capability
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IXFK34N80
IXFX34N80
Cto150
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