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    IXTA2N100 Price and Stock

    IXYS Corporation IXTA2N100

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100 Tube 50
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    Mouser Electronics IXTA2N100
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    Littelfuse Inc IXTA2N100P

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P Tube 300
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    IXYS Corporation IXTA2N100-TRL

    MOSFET N-CH TO263
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    Littelfuse Inc IXTA2N100P-TRL

    MOSFET N-CH 1000V 2A TO263
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    DigiKey IXTA2N100P-TRL Reel 800
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    IXYS Corporation IXTA2N100P

    MOSFET 2 Amps 1000V 7.5 Rds
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    Mouser Electronics IXTA2N100P
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    TTI IXTA2N100P Tube 300
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    TME IXTA2N100P 5 1
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    IXTA2N100 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTA2N100 IXYS 1000V high voltage MOSFET Original PDF
    IXTA2N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 2A TO-263 Original PDF
    IXTA2N100SN IXYS Transistor Mosfet N-CH 1000V 2A 3TO-263 AA Original PDF

    IXTA2N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP2N100

    Abstract: 2N100 IXTA2N100
    Text: IXTA2N100 IXTP2N100 High Voltage MOSFET VDSS ID25 RDS on = 1000V = 2A ≤ 7Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA2N100 IXTP2N100 O-263 2N100 3X-G68 IXTP2N100 IXTA2N100

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ Ω 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P

    IXTP2N100P

    Abstract: 2N100P IXTA2N100P IXTP2N100
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A ≤ 7.5Ω Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A IXTP2N100P 2N100P IXTA2N100P IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: PolarTM Power MOSFET IXTA2N100P IXTP2N100P IXTY2N100P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 1000V = 2.0A Ω ≤ 7.5Ω TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA2N100P IXTP2N100P IXTY2N100P O-263 2N100P 4-03-08-A

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET VDSS ID25 IXTA2N100 IXTP2N100 RDS on = 1000V = 2A Ω ≤ 7Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000


    Original     		PDF IXTA2N100 IXTP2N100 O-263 2N100 3X-G68

    MOSFET 11N80 Data sheet

    Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
    Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250


    Original     		PDF O-247 O-220 O-263 O-264 67N10 75N10 50N20 C2-10 C2-18 C2-20 MOSFET 11N80 Data sheet MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640

    2N100

    Abstract: FIGURE10 125OC IXTA2N100 IXTP2N100
    Text: High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS on = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF 2N100 O-220AB O-263 125OC Figure10. 2N100 FIGURE10 125OC IXTA2N100 IXTP2N100

    Untitled

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA2N100 IXTP2N100 N-Channel Enhancement Mode v DSS ^D25 P DS on =1000 V =2A =7Q 9 Symbol Test Conditions V ¥ dss Tj =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 MQ 1000 V Continuous i2 0 V Transient 130 V VGS v GSM ^D25


    OCR Scan     		PDF IXTA2N100 IXTP2N100 Cto150 O-263 O-22QAB 1999IXYS C2-76 C2-77

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20