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    78737

    Abstract: No abstract text available
    Text: High Voltage MegaMOS FETs IXTK21N100 IXTN21N100 V DSS ^D25 R DS on =1000 V = 21 A = 0.55 fì N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions VDSS Tj = 25 °C to 150°C 1000 1000 V v DGR Tj = 25 °C to 150°C; RGS = 1 MQ 1000 1000 V V ss


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    PDF IXTK21N100 IXTN21N100 O-264 OT-227 E153432 ab22b 00D4D0S 78737