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    IXTH12N100 Search Results

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    IXTH12N100 Price and Stock

    Littelfuse Inc IXTH12N100L

    MOSFET N-CH 1000V 12A TO247
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    DigiKey IXTH12N100L Tube 62 1
    • 1 $21.68
    • 10 $21.68
    • 100 $17.97333
    • 1000 $14.37878
    • 10000 $14.37878
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    IXYS Corporation IXTH12N100

    MOSFET N-CH 1000V 12A TO247
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    DigiKey IXTH12N100 Tube
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    Quest Components IXTH12N100 29
    • 1 $15.2
    • 10 $11.4
    • 100 $9.88
    • 1000 $9.88
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    IXYS Corporation IXTH12N100Q

    MOSFET N-CH 1000V 12A TO247
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    DigiKey IXTH12N100Q Tube
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    IXYS Corporation IXTH12N100L

    MOSFET 12 Amps 1000V 1.3 Ohms Rds
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    Mouser Electronics IXTH12N100L
    • 1 $21.68
    • 10 $16.86
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    Quest Components IXTH12N100L 5
    • 1 $21.345
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    • 100 $21.345
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    TTI IXTH12N100L Tube 300
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    TME IXTH12N100L 1
    • 1 $20.77
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    • 100 $17.57
    • 1000 $16.48
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    New Advantage Corporation IXTH12N100L 180 1
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    IXTH12N100 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTH12N100 IXYS 1000V HiPerFET power MOSFET Original PDF
    IXTH12N100 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH12N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH12N100L IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247 Original PDF
    IXTH12N100SN IXYS Transistor Mosfet N-CH 1000V 12A 3TO-247 AD Original PDF

    IXTH12N100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTH12N100L

    Abstract: No abstract text available
    Text: IXTH12N100L LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 RDS on = 1000V = 12A ≤ 1.3Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTH12N100L O-247 12N100L 9-10-A IXTH12N100L

    IXTH12N100L

    Abstract: No abstract text available
    Text: Preliminary Technical Information Linear Power MOSFET IXTH12N100L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


    Original     		PDF IXTH12N100L O-247 12N100L 4-05-07-A IXTH12N100L

    RSS RESISTOR

    Abstract: ltc4366-2
    Text: LTC4366-1/LTC4366-2 High Voltage Surge Stopper Features n n n n n n n n Description Rugged Floating Topology Wide Operating Voltage Range: 9V to >500V Adjustable Output Clamp Voltage Controls N-Channel MOSFET Adjustable Protection Timer Internal 9 Second Cool-Down Timer


    Original     		PDF LTC4366-1/LTC4366-2 LTC4366 LTC4355 LT4363 LTC4365 com/LTC4366 436612fd RSS RESISTOR ltc4366-2

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    LTC4366

    Abstract: LTC4366-1 zener p2t how to increase an current from DC 18v to 250v 464m LTC4366ITS8-1 lm117 3A LTC4366HDDB-2 LM117 LT3850
    Text: LTC4366-1/LTC4366-2 High Voltage Surge Stopper FEATURES n n n n n n n n DESCRIPTION Rugged Floating Topology Wide Operating Voltage Range: 9V to >500V Adjustable Output Clamp Voltage Controls N-Channel MOSFET Adjustable Protection Timer Internal 9 Second Cool-Down Timer


    Original     		PDF LTC4366-1/LTC4366-2 LTC4366 LT3850 LTC3890 LT4256 LTC4260 LT4352 LTC4354 LTC4355 LTC4366-1 zener p2t how to increase an current from DC 18v to 250v 464m LTC4366ITS8-1 lm117 3A LTC4366HDDB-2 LM117

    IXAN0068

    Abstract: IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L
    Text: Linear Power MOSFETS Basic and Applications Abdus Sattar, Vladimir Tsukanov, IXYS Corporation IXAN0068 Applications like electronic loads, linear regulators or Class A amplifiers operate in the linear region of the Power MOSFET, which requires high power dissipation capability


    Original     		PDF IXAN0068 6710405B2, IXAN0068 IXTK46N50L Abdus Sattar, Vladimir Tsukanov, "Power MOSFETs 1000V 2A BJT 1200W MOSFET power IXTH24n50l mosfet modern applications 400V linear regulator IXTN62N50L IXTH12N100L

    IXFH15N100

    Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
    Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP


    Original     		PDF IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		PDF O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		PDF IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		PDF O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95

    Untitled

    Abstract: No abstract text available
    Text: g ixYs VDSS ! RDS on 1000 V 10 A 1.20 n 1000 V 12 A 1.05 Û IXTH/IXTM10 N100 IXTH/IXTM12 N100 MegaMOS FET 1D25 N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions v’ DSS ^ v 0GR Td = 25°C to 150“C; RGS = 1 Mi2 = 25°C to 150°C 1000 V


    OCR Scan     		PDF IXTH/IXTM10 IXTH/IXTM12 10N100 12N100 O-247 O-204 O-247 IXTH10N100

    ixth12n100

    Abstract: 12n100 3055P
    Text: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000


    OCR Scan     		PDF 10N100 12N100 Cto150 O-247AD O-204 O-204 ixth12n100 3055P