MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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5302D
Abstract: No abstract text available
Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make
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DG428,
DG429
DG429
DG428
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
5302D
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si1922
Abstract: SI1922EDH
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1922
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SQ2303ES
Abstract: marking code 604 SOT23
Text: SQ2303ES www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ2303ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2303ES*
OT-23
SQ2303ES-T1-GE3
2011/65/EU
2002/95/EC.
SQ2303ES
marking code 604 SOT23
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SQ2318ES
Abstract: No abstract text available
Text: SQ2318ES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2318ES
O-236
OT-23)
AEC-Q101
2002/95/EC
SQ2318ES*
OT-23
SQ2318ES-T1-GE3
2011/65/EU
2002/95/EC.
SQ2318ES
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SQ2351ES
Abstract: No abstract text available
Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:
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SQ2351ES
O-236
OT-23)
AEC-Q101
SQ2351ES
OT-23
SQ2351ES-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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marking L4 mosfet sot23
Abstract: SI2304
Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si2304BDS
2002/95/EC
O-236
OT-23)
Si2304BDS-T1-E3
Si2304BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
marking L4 mosfet sot23
SI2304
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si2301
Abstract: No abstract text available
Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si2301BDS
2002/95/EC
O-236
OT-23)
Si2301
Si2301BDS-T1-E3
Si2301BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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Si1303DL-T1-gE3
Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition
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Si1303DL
2002/95/EC
OT-323
SC-70
Si1303DL-T1-E3
Si1303DL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
sc70-3 PCB PAD
SI1303D
SOT-323 31 MOSFET
sc-70 package pcb layout
F MARKING 6PIN
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Si2303CDS
Abstract: No abstract text available
Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2303CDS
O-236
OT-23)
Si2303CDS-T1-E3
Si2303CDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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SI2333DS-T1-E3
Abstract: No abstract text available
Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si2333DS
O-236
OT-23)
Si2333DS-T1-E3
Si2333DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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TP0610K-T1-E
Abstract: TP0610K-T1-E3
Text: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability
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TP0610K
O-236
OT-23)
TP0610K
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TP0610K-T1-E
TP0610K-T1-E3
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DG201BDQ-T1-E3
Abstract: No abstract text available
Text: DG201B, DG202B Vishay Siliconix Improved Quad CMOS Analog Switches DESCRIPTION FEATURES The DG201B, DG202B analog switches are highly improved versions of the industry-standard DG201A, DG202. These devices are fabricated in Vishay Siliconix’ proprietary silicon
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DG201B,
DG202B
DG202B
DG201A,
DG202.
DG201B
2011/65/EU
2002/95/EC.
DG201BDQ-T1-E3
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Si2315BDS-T1-E3
Abstract: No abstract text available
Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*
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Si2315BDS
O-236
OT-23)
Si2315BDS-T1
Si2315BDS-T1-E3
Si2315BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
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SI1443EDH
Abstract: marking code bt S1209
Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET
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Si1443EDH
SC-70
Si1443EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code bt
S1209
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N-Channel mosfet sot-363
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Si1539CDL
OT-363
SC-70
Si1539CDL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
N-Channel mosfet sot-363
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si2329
Abstract: SI2329DS
Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8
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Si2329DS
2002/95/EC
O-236
OT-23)
Si2329DS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
si2329
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Untitled
Abstract: No abstract text available
Text: Si1926DL www.vishay.com Vishay Siliconix Dual N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) MAX. ID (A) 1.4 at VGS = 10 V 0.37 3 at VGS = 4.5 V 0.25 Qg (nC) TYP. 0.47 D1 6 • 100 % Rg tested • ESD protected: 1800 V • Material categorization:
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Si1926DL
OT-363
SC-70
Si1926DL-T1-E3
Si1926DL-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQ2318AES www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 40 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.036 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ2318AES
AEC-Q101
OT-23
O-236)
SQ2318AES-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: Si6543DQ Vishay Siliconix Dual N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V ± 3.9 0.095 at VGS = 4.5 V ± 3.1 0.085 at VGS = - 10 V ± 2.5 0.19 at VGS = - 4.5 V ± 1.8
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Si6543DQ
Si6543DQ-T1
Si6543DQ-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC
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Si2377EDS
2002/95/EC
O-236
OT-23)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: DG444, DG445 Vishay Siliconix Quad SPST CMOS Analog Switches • Audio switching FEATURES • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns
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DG444,
DG445
DG211,
DG212
DG445
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: 7 THIS DRAWING IS UNPUBLISHED. E COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC DIST REVISIONS 47 AD ALL RIGHTS RESERVED. P LTR DESCRIPTION F R E V I S E D P E R E C DATE 09JUL01 0 S 1 B - 0 0 2 0 - 0 1 DWN APVD J G DD A+.008 [0.2]
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09JUL01
09MAY94
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Untitled
Abstract: No abstract text available
Text: 7 T H IS DRAWING 15 UNPUBLISHED. JÊL COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. , 6 4 5 2 3 19 DI ST LOC ALL RIGHTS RESERVED. REVISIONS 47 AD DESCRIPTION P REVISED PER EC 0S1B-0020-01 DD 09JUL01 A±.008 [0 .2 ] + - . 0 0 0 . 0 r + 0 2 - -,
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0S1B-0020-01
09JUL01
IMAY94
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