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    Vishay Siliconix SI2329DS-T1-GE3

    MOSFET P-CH 8V 6A SOT23-3
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    DigiKey SI2329DS-T1-GE3 Reel 18,000 3,000
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    SI2329DS-T1-GE3 Cut Tape 2,967 1
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    SI2329DS-T1-GE3 Digi-Reel 1
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    RS SI2329DS-T1-GE3 Bulk 20
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    New Advantage Corporation SI2329DS-T1-GE3 18,000 1
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    Vishay Intertechnologies SI2329DS-T1-GE3

    Trans MOSFET P-CH 8V 5.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2329DS-T1-GE3)
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    Avnet Americas SI2329DS-T1-GE3 Reel 9,000 19 Weeks 3,000
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    SI2329DS-T1-GE3 Bulk 19 Weeks, 1 Days 1
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    SI2329DS-T1-GE3 Ammo Pack 17 Weeks, 3 Days 1
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    Mouser Electronics SI2329DS-T1-GE3 36,841
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    Verical SI2329DS-T1-GE3 48,000 3,000
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    SI2329DS-T1-GE3 10,419 250
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    Arrow Electronics SI2329DS-T1-GE3 48,000 19 Weeks 3,000
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    SI2329DS-T1-GE3 Cut Strips 17 19 Weeks 1
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    Newark SI2329DS-T1-GE3 Bulk 10,419 1
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    SI2329DS-T1-GE3 Reel 9,000 3,000
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    SI2329DS-T1-GE3 Cut Tape 1,627 1
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    Quest Components SI2329DS-T1-GE3 40,731
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    SI2329DS-T1-GE3 40,731
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    TTI SI2329DS-T1-GE3 Reel 6,000 3,000
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    TME SI2329DS-T1-GE3 2,949 1
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    Avnet Asia SI2329DS-T1-GE3 18 Weeks 3,000
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    Chip-Germany GmbH SI2329DS-T1-GE3 400
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    Chip1Stop SI2329DS-T1-GE3 48,000
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    SI2329DS-T1-GE3 17
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    EBV Elektronik SI2329DS-T1-GE3 17 Weeks 3,000
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    Others SI2329DS-T1-GE3

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    Chip-Germany GmbH SI2329DS-T1-GE3 2,375
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    SI2329DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI2329DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A SOT-23 Original PDF

    SI2329DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si2329DS

    Abstract: si2329 si23
    Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2329DS 11-Mar-11 si2329 si23

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    SI2329DS-T1-GE3

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2329DS www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2329DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si2329

    Abstract: 43217 Si23
    Text: Si2329DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2329DS-GE3 AN609, 7637u 4804m 0003m 5656u 7143m 9848m 6315m 04-Apr-11 si2329 43217 Si23

    si2329

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 11-Mar-11 si2329

    Untitled

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		PDF SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802