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    SI1443EDH Price and Stock

    Vishay Siliconix SI1443EDH-T1-GE3

    MOSFET P-CH 30V 4A SOT-363
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    DigiKey SI1443EDH-T1-GE3 Reel 36,000 3,000
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    SI1443EDH-T1-GE3 Cut Tape 2,120 1
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    SI1443EDH-T1-GE3 Digi-Reel 1
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    RS SI1443EDH-T1-GE3 Bulk 3,000
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    Vishay Siliconix SI1443EDH-T1-BE3

    MOSFET P-CH 30V 4A/4A SC70-6
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    DigiKey SI1443EDH-T1-BE3 Cut Tape 4,330 1
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    SI1443EDH-T1-BE3 Reel 3,000 3,000
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    SI1443EDH-T1-BE3 Digi-Reel 1
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    Vishay Intertechnologies SI1443EDH-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1443EDH-T1-BE3)
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    Avnet Americas SI1443EDH-T1-BE3 Reel 16 Weeks 3,000
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    Mouser Electronics SI1443EDH-T1-BE3 94,897
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    Newark SI1443EDH-T1-BE3 Reel 3,000
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    TTI SI1443EDH-T1-BE3 Reel 12,000 3,000
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    Vishay Intertechnologies SI1443EDH-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1443EDH-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI1443EDH-T1-GE3 Reel 16 Weeks 3,000
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    Mouser Electronics SI1443EDH-T1-GE3 27,897
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    Verical SI1443EDH-T1-GE3 3,000 3,000
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    SI1443EDH-T1-GE3 2,750 80
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    SI1443EDH-T1-GE3 1,000 53
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    Arrow Electronics SI1443EDH-T1-GE3 3,000 16 Weeks 3,000
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    SI1443EDH-T1-GE3 Cut Strips 1,000 16 Weeks 1
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    Newark SI1443EDH-T1-GE3 Cut Tape 37,700 5
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    SI1443EDH-T1-GE3 Cut Tape 3,000
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    SI1443EDH-T1-GE3 Reel 3,000
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    TTI SI1443EDH-T1-GE3 Reel 3,000 3,000
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    TME SI1443EDH-T1-GE3 1
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    Avnet Asia SI1443EDH-T1-GE3 18 Weeks 3,000
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    EBV Elektronik SI1443EDH-T1-GE3 17 Weeks 3,000
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    SI1443EDH Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1443EDH-T1-BE3 Vishay Siliconix MOSFET P-CH 30V 4A/4A SC70-6 Original PDF
    SI1443EDH-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 4A SOT-363 Original PDF

    SI1443EDH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI1443EDH

    Abstract: marking code bt S1209
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		PDF Si1443EDH SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code bt S1209

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		PDF Si1443EDH SC-70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    A 69157

    Abstract: 1.2627 12627 si1443
    Text: Si1443EDH-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1443EDH-GE3 AN609, 0924u 4833m 1454m 8926u 2315m 2564m 0420m 27-Apr-11 A 69157 1.2627 12627 si1443

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • • • • TrenchFET Power MOSFET


    Original     		PDF Si1443EDH SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1443EDH 2002/95/EC SC-70 Si1443EDH-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1443EDH www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1443EDH 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si1443

    Abstract: No abstract text available
    Text: New Product Si1443EDH Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.054 at VGS = - 10 V - 4a 0.062 at VGS = - 4.5 V - 4a 0.085 at VGS = - 2.5 V - 3.4 Qg (Typ.) 8.6 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1443EDH 2002/95/EC SC-70 Si1443EDH-T1-GE3 11-Mar-11 si1443

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836