N-Channel mosfet sot-363
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Si1539CDL
OT-363
SC-70
Si1539CDL-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
N-Channel mosfet sot-363
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67645
Abstract: No abstract text available
Text: Si1539CDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si1539CDL
AN609,
6486u
9813u
8415u
7784m
67645
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Untitled
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Original
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PDF
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Si1539CDL
OT-363
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Original
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PDF
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Si1539CDL
OT-363
SC-70
Si1539CDL-T1-GE3
11-Mar-11
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SI1539CDL-T1-GE3
Abstract: si1539dl-t1-ge3 SI1539DL-T1-E3
Text: Specification Comparison Vishay Siliconix Si1539CDL vs. Si1539DL Description: Package: Pin Out: N- and P-Channel, 30 V D-S MOSFETs SC-70 Identical Part Number Replacements: Si1539CDL-T1-GE3 replaces Si1539DL-T1-E3 Si1539CDL-T1-GE3 replaces Si1539DL-T1-GE3
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Si1539CDL
Si1539DL
SC-70
Si1539CDL-T1-GE3
Si1539DL-T1-E3
Si1539DL-T1-GE3
23-Mar-11
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si1539CDL www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n- and p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si1539CDL
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)
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Original
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PDF
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Si1539CDL
OT-363
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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