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Vishay Siliconix SI2304BDS-T1-GE3 MOSFET N-CH 30V 2.6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2304BDS-T1-GE3	Reel	60,800		3,000	1 - 10 - 100 - 1000 - 10000 $0.13507	Buy Now
Quest Components	SI2304BDS-T1-GE3		28			1 $0.36 10 $0.36 100 $0.3 1000 $0.3 10000 $0.3	Buy Now
Vishay Siliconix SI2304DDS-T1-GE3 MOSFET N-CH 30V 3.3A/3.6A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2304DDS-T1-GE3	Cut Tape	36,851		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
	SI2304DDS-T1-GE3	Digi-Reel	36,851		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
	SI2304DDS-T1-GE3	Reel	36,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12409	Buy Now
RS	SI2304DDS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.264	Get Quote
Quest Components	SI2304DDS-T1-GE3		762			1 $0.36 10 $0.36 100 $0.24 1000 $0.168 10000 $0.168	Buy Now
New Advantage Corporation	SI2304DDS-T1-GE3		198,000		1	1 - 10 - 100 - 1000 - 10000 $0.1052	Buy Now
Vishay Siliconix SI2304BDS-T1-E3 MOSFET N-CH 30V 2.6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2304BDS-T1-E3	Cut Tape	22,225		1	1 $0.6 10 $0.368 100 $0.6 1000 $0.15867 10000 $0.15867	Buy Now
Bristol Electronics	SI2304BDS-T1-E3		11,065		10	1 - 10 $0.525 100 $0.2625 1000 $0.105 10000 $0.0709	Buy Now
	SI2304BDS-T1-E3		100		10	1 - 10 $0.525 100 $0.2625 1000 $0.2625 10000 $0.2625	Buy Now
Quest Components	SI2304BDS-T1-E3		8,852			1 $0.7 10 $0.7 100 $0.7 1000 $0.7 10000 $0.0875	Buy Now
	SI2304BDS-T1-E3		80			1 $0.7 10 $0.35 100 $0.21 1000 $0.21 10000 $0.21	Buy Now
	SI2304BDS-T1-E3		64			1 $0.2295 10 $0.2295 100 $0.153 1000 $0.153 10000 $0.153	Buy Now
Vishay Siliconix SI2304DDS-T1-BE3 MOSFET N-CH 30V 3.3A/3.6A SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2304DDS-T1-BE3	Cut Tape	12,078		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
	SI2304DDS-T1-BE3	Digi-Reel	12,078		1	1 $0.55 10 $0.341 100 $0.55 1000 $0.14611 10000 $0.14611	Buy Now
	SI2304DDS-T1-BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.12409	Buy Now
New Advantage Corporation	SI2304DDS-T1-BE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1131	Buy Now
Vishay Siliconix SI2304BDS-T1-BE3 N-CHANNEL 30-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2304BDS-T1-BE3	Cut Tape	9,870		1	1 $0.6 10 $0.368 100 $0.6 1000 $0.15867 10000 $0.15867	Buy Now
	SI2304BDS-T1-BE3	Digi-Reel	9,870		1	1 $0.6 10 $0.368 100 $0.6 1000 $0.15867 10000 $0.15867	Buy Now
	SI2304BDS-T1-BE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13507	Buy Now
New Advantage Corporation	SI2304BDS-T1-BE3		6,000		1	1 - 10 - 100 - 1000 - 10000 $0.1413	Buy Now

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SI2304 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2304	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF
SI2304BDS	Vishay Siliconix	MOSFETs	Original	PDF
Si2304BDS SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si2304BDS-T1	Vishay	Transistor Mosfet N-CH 30V 2.6A 3TO-236 REEL	Original	PDF
SI2304BDS-T1-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.6A SOT23-3	Original	PDF
Si2304BDS-T1-E3	Vishay Telefunken		Original	PDF
SI2304BDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.6A SOT23-3	Original	PDF
SI2304DDS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.3A SOT23	Original	PDF
SI2304DS	Philips Semiconductors	N-channel enhancement mode field-effect transistor	Original	PDF
Si2304DS	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
Si2304DS	Vishay	Transistor Mosfet N-CH 30V 2.5A 3TO-236	Original	PDF
Si2304DS	Vishay Intertechnology	N-Channel 30 V (D-S) MOSFET	Original	PDF
SI2304DS,215	NXP Semiconductors	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I_D DC: 1.7 A; Q_gd (typ): 1.35 nC; R_DS(on): 117@10V190@4.5V mOhm; V_DSmax: 30 V; Package: SOT23 (TO-236AB); Container: Tape reel smd	Original	PDF
SI2304DS/DG,215	NXP Semiconductors	SI2304DS/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel	Original	PDF

Si2304DS SPICE Device Model	Vishay	N-Channel 30-V (D-S) MOSFET	Original	PDF
Si2304DS-T1	Vishay	Transistor Mosfet N-CH 30V 2.5A 3TO-236 REEL	Original	PDF
SI2304DS-T1	Vishay Intertechnology	N-Channel Enhancement-Mode Transistor	Original	PDF
SI2304DST/R	NXP Semiconductors	N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; I_D DC: 1.7 A; Q_gd (typ): 1.35 nC; R_DS(on): 117@10V190@4.5V mOhm; V_DSmax: 30 V	Original	PDF
SI2304-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL MOSFET, SOT-23 PACKAGE	Original	PDF

SI2304 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
marking L4 mosfet sot23 Abstract: SI2304 Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304	PDF
Si2304BDS Abstract: Si2304BDS-T1-E3 Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View	Original	Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11	PDF
4614 mosfet Abstract: Si2304DDS A 0412 MOSFET MOSFET 4614 AN609 Text: Si2304DDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	Si2304DDS AN609, 29-Jul-09 4614 mosfet A 0412 MOSFET MOSFET 4614 AN609	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	SI2304 OT-23 OT-23	PDF
SI2304DS-T1-E3 Abstract: SI2304BDS-T1-E3 Si2304BDS Si2304BDS-T1 Si2304DS Si2304DS-T1 n-Channel 12-V D-S MOSFET sot-23 6VSD Text: Specification Comparison Vishay Siliconix Si2304BDS vs. Si2304DS Description: N-Channel, 30 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2304BDS-T1-E3 Replaces Si2304DS-T1-E3 Si2304BDS-T1 Replaces Si2304DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	Si2304BDS Si2304DS OT-23 Si2304BDS-T1-E3 Si2304DS-T1-E3 Si2304BDS-T1 Si2304DS-T1 06-Nov-06 n-Channel 12-V D-S MOSFET sot-23 6VSD	PDF
Untitled Abstract: No abstract text available Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11	PDF
4606 mosfet Abstract: 4606 A 4606 transistor 4606 mosfet AN609 Si2304BDS Text: Si2304BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si2304BDS AN609 03-May-07 4606 mosfet 4606 A 4606 transistor 4606 mosfet	PDF
Si2304BDS Abstract: Si2304BDS-T1 Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3	Original	Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-32412--Rev. 24-Nov-03 Si2304BDS-T1	PDF
Untitled Abstract: No abstract text available Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Si2304BDS Abstract: No abstract text available Text: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2304BDS 18-Jul-08	PDF
Si2304DDS Abstract: SI2304DDS-T1-GE3 n-Channel 12-V D-S MOSFET sot-23 Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 18-Jul-08 n-Channel 12-V D-S MOSFET sot-23	PDF
Untitled Abstract: No abstract text available Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2304 Features • • • • • • • • • N-Channel Enhancement Mode Lead Free Finish/RoHS Compliant "P" Suffix designates	Original	SI2304 OT-23 OT-23	PDF
MSB003 Abstract: SI2304DS Text: SI2304DS N-channel enhancement mode field-effect transistor Rev. 01 — 17 August 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology Product availability: SI2304DS in SOT23.	Original	SI2304DS M3D088 SI2304DS MSB003	PDF

Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components Features • • • • • • • • • • omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2304 Halogen free available upon request by adding suffix "-HF"	Original	SI2304 OT-23 OT-23	PDF
Si2304BDS Abstract: No abstract text available Text: SPICE Device Model Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2304BDS 0-to-10V 16-Oct-03	PDF
Si2304DS Abstract: 70901 Text: SPICE Device Model Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2304DS 13-Jul-98 70901	PDF
Untitled Abstract: No abstract text available Text: Si2304DDS_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	Si2304DDS AN609, 4415u 6897u 0973m 2633u 4614m 2779u 2933m 25-Jun-14	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si2304DDS www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C	Original	Si2304DDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Si2304BDS Abstract: Si2304BDS-T1-E3 Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View	Original	Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 08-Apr-05	PDF
Si2304DDS Abstract: No abstract text available Text: New Product Si2304DDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.060 at VGS = 10 V 3.6 0.075 at VGS = 4.5 V 3.6 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si2304DDS 2002/95/EC O-236 OT-23) Si2304DDS-T1-GE3 11-Mar-11	PDF
Si2304DDS Abstract: No abstract text available Text: SPICE Device Model Si2304DDS Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si2304DDS 18-Jul-08	PDF
SI2304DS Abstract: No abstract text available Text: SPICE Device Model SI2304DS N-Channel Enhancement-Mode Transistors Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range	Original	SI2304DS Si2304DS	PDF
SI2304DS marking code SOT-23 Abstract: A4* marking code A4 MARKING CODE Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )	OCR Scan	2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE	PDF

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Vishay Siliconix SI2304BDS-T1-GE3

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Vishay Siliconix SI2304BDS-T1-BE3

SI2304 Datasheets (19)

SI2304 Datasheets Context Search

marking L4 mosfet sot23

Si2304BDS

4614 mosfet

Untitled

SI2304DS-T1-E3

Untitled

4606 mosfet

Si2304BDS

Untitled

Si2304BDS

Si2304DDS

Untitled

Untitled

MSB003

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Si2304BDS

Si2304DS

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Untitled

Si2304BDS

Si2304DDS

Si2304DDS

SI2304DS

SI2304DS marking code SOT-23