Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI2312BDS Search Results

    SF Impression Pixel

    SI2312BDS Price and Stock

    Vishay Siliconix SI2312BDS-T1-GE3

    MOSFET N-CH 20V 3.9A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2312BDS-T1-GE3 Reel 39,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16321
    		Buy Now
    SI2312BDS-T1-GE3 Cut Tape 1,692 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now
    SI2312BDS-T1-GE3 Digi-Reel 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now
    New Advantage Corporation SI2312BDS-T1-GE3 102,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2114
    		Buy Now

    Vishay Siliconix SI2312BDS-T1-E3

    MOSFET N-CH 20V 3.9A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2312BDS-T1-E3 Reel 21,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16321
    		Buy Now
    SI2312BDS-T1-E3 Cut Tape 12,604 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now
    SI2312BDS-T1-E3 Digi-Reel 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now
    RS SI2312BDS-T1-E3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.556
    		Get Quote
    Quest Components SI2312BDS-T1-E3 81
    • 1 $0.3264
    • 10 $0.3264
    • 100 $0.2176
    • 1000 $0.2176
    • 10000 $0.2176
    		Buy Now
    New Advantage Corporation SI2312BDS-T1-E3 456,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2
    		Buy Now

    Vishay Siliconix SI2312BDS-T1-BE3

    N-CHANNEL 20-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2312BDS-T1-BE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16321
    		Buy Now
    SI2312BDS-T1-BE3 Cut Tape 242 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now
    SI2312BDS-T1-BE3 Digi-Reel 1
    • 1 $0.55
    • 10 $0.47
    • 100 $0.3264
    • 1000 $0.20715
    • 10000 $0.20715
    		Buy Now

    Vishay Intertechnologies SI2312BDS-T1-GE3

    Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2312BDS-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2312BDS-T1-GE3 Reel 12,000 13 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.15538
    		Buy Now
    Mouser Electronics SI2312BDS-T1-GE3 599,278
    • 1 $0.55
    • 10 $0.453
    • 100 $0.327
    • 1000 $0.208
    • 10000 $0.163
    		Buy Now
    Newark SI2312BDS-T1-GE3 Reel 3,000
    • 1 $0.229
    • 10 $0.229
    • 100 $0.229
    • 1000 $0.229
    • 10000 $0.207
    		Buy Now
    SI2312BDS-T1-GE3 Cut Tape 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.268
    • 10000 $0.268
    		Buy Now
    Bristol Electronics SI2312BDS-T1-GE3 998
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SI2312BDS-T1-GE3 1,437
    • 1 $0.726
    • 10 $0.726
    • 100 $0.726
    • 1000 $0.2904
    • 10000 $0.2904
    		Buy Now
    TTI SI2312BDS-T1-GE3 Reel 15,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.164
    		Buy Now
    TME SI2312BDS-T1-GE3 3
    • 1 -
    • 10 $0.402
    • 100 $0.319
    • 1000 $0.287
    • 10000 $0.267
    		Get Quote
    Avnet Asia SI2312BDS-T1-GE3 11 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SI2312BDS-T1-GE3 14 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI2312BDS-T1-BE3

    Transistor MOSFET N-CH 20V 5A 3-Pin SOT-23 - Tape and Reel (Alt: SI2312BDS-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2312BDS-T1-BE3 Reel 13 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.16749
    		Buy Now
    Mouser Electronics SI2312BDS-T1-BE3 336,501
    • 1 $0.55
    • 10 $0.47
    • 100 $0.327
    • 1000 $0.208
    • 10000 $0.167
    		Buy Now
    Newark SI2312BDS-T1-BE3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.179
    		Buy Now
    TTI SI2312BDS-T1-BE3 Reel 75,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.163
    		Buy Now
    Find more SI2312BDS price and stock on Findchips.com

    SI2312BDS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI2312BDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET Original PDF
    SI2312BDS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3 Original PDF
    SI2312BDS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 3.9A SOT23-3 Original PDF

    SI2312BDS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET SOT-23 marking code M2

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2

    AN609

    Abstract: Si2312BDS
    Text: Si2312BDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2312BDS AN609 03-May-07

    Si2312BDS

    Abstract: Si2312BDS-T1-GE3 Si2312BDS-T1-E3 m2 marking
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 m2 marking

    SI2312BDS

    Abstract: 50396
    Text: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2312BDS S-50396Rev. 14-Mar-05 50396

    SI2312BDS-T1-GE3

    Abstract: Si2312BDS Si2312BDS-T1-E3
    Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si2312BDS-T1-E3

    Abstract: MOSFET SOT-23 marking code M2 Si2312BDS
    Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 08-Apr-05 Si2312BDS-T1-E3 MOSFET SOT-23 marking code M2

    Si2312DS-T1-E3

    Abstract: Si2312BDS-T1-E3 SI2312BDS Si2312DS Si2312DS-T1
    Text: Specification Comparison Vishay Siliconix Si2312BDS vs. Si2312DS Description: N-Channel, 20 V D-S MOSFET Package: SOT-23 Pin Out: Identical Part Number Replacements: Si2312BDS-T1-E3 Replaces Si2312DS-T1-E3 Si2312BDS-T1-E3 Replaces Si2312DS-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2312BDS Si2312DS OT-23 Si2312BDS-T1-E3 Si2312DS-T1-E3 Si2312DS-T1 06-Nov-06

    SI2312CDS

    Abstract: SI2312bDS SI2312BDS-T1-GE3
    Text: Specification Comparison Vishay Siliconix Si2312CDS vs. Si2312BDS Description: Package: Pin Out: N-Channel, 20 V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 Si2312CDS-T1-GE3 replaces Si2312BDS-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si2312CDS Si2312BDS OT-23 Si2312CDS-T1-GE3 Si2312BDS-T1-GE3

    MOSFET SOT-23 marking code M2

    Abstract: SI2312BDS-T1-GE3 SI2312BDS Si2312BDS-T1-E3
    Text: Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 18-Jul-08 MOSFET SOT-23 marking code M2

    SI2312BDS-T1-E3

    Abstract: No abstract text available
    Text: Si2312BDS New Product Vishay Siliconix N-Channel 20 -V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 0.047 @ VGS = 1.8 V 4.1 D TrenchFETr Power MOSFET D 100% Rg Tested Qg (Typ) 7.5 TO-236


    Original     		PDF Si2312BDS O-236 OT-23) Si2312BDS-T1--E3 S-50136--Rev. 24-Jan-05 SI2312BDS-T1-E3

    Si2312BDS-T1-GE3

    Abstract: Si2312BDS-T1-E3 Si2312BDS S10079 M2 MARKING CODE sot-23 CODE 41
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 11-Mar-11 S10079 M2 MARKING CODE sot-23 CODE 41

    SI2312BDS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2312BDS Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2312BDS 18-Jul-08

    Si2312BDS-T1-GE3

    Abstract: No abstract text available
    Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 11-Mar-11

    luxeon driver 1200 ma mosfet

    Abstract: luxeon driver 1200 ma High power led driver LED lights manufacturing technology Luxeon III Star LED 1N4448W 2N7002L B240A LT3474 Si2312BDS
    Text: High Voltage Buck Converters Drive High Power LEDs Design Note 392 Keith Szolusha Introduction High power LEDs continue to replace traditional bulbs in new automotive, industrial, backlight display and architectural detail lighting systems. LEDs excel in a wide


    Original     		PDF LT3475, CDRH8D28-100 Si2312BDS LT3475 220pF 2N7002L DN392 luxeon driver 1200 ma mosfet luxeon driver 1200 ma High power led driver LED lights manufacturing technology Luxeon III Star LED 1N4448W 2N7002L B240A LT3474

    RTL8211E

    Abstract: ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV SCHEM,MBP 15"MLB ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? ? ? ? DATE ?


    Original     		PDF ISL10 ISL11 RTL8211E ISL6258A 88E1116R Marvell 88E1116R ISL6258 RTL8211 L6703 u9701 MCP79-B01 Q7055

    RTL8211E

    Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
    Text: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF

    ISL6259

    Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
    Text: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01


    Original     		PDF

    PTPR330M9L

    Abstract: PT121 LED led HG Luminus PT121 LT3743 Luminus Driver luminus datasheet PT120 Luminus pwm ptpr330
    Text: L DESIGN FEATURES High Current/High Speed LED Driver Revolutionizes PWM Dimming by Josh Caldwell Introduction Power drivers that can produce regulated high current pulses are used in a number of lighting applications, ranging from high current LEDs in DLP projectors to high power laser


    Original     		PDF LT3743 PTPR330M9L PT121 LED led HG Luminus PT121 Luminus Driver luminus datasheet PT120 Luminus pwm ptpr330

    schematic diagram inverter 12v to 24v 1000w

    Abstract: car power amp circuit diagrams 1000w schematic diagram 48V solar charge controller 48V DC to 12v dc 40 amp converter circuit diagram 1000W Amplifier 1000w schematic diagrams solar charger schematic 24V 12v 1000W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics amplifier circuit diagram class D 1000w 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM
    Text: LINEAR TECHNOLOGY DECEMBER 2009 IN THIS ISSUE… COVER ARTICLE 1.2A Buck Converters Draw Only 2.8µA When Regulating Zero Load, Accept 38VIN or 55VIN.1 John Gardner Linear in the News.2 DESIGN FEATURES


    Original     		PDF 38VIN 55VIN. SE-164 1-800-4-LINEAR schematic diagram inverter 12v to 24v 1000w car power amp circuit diagrams 1000w schematic diagram 48V solar charge controller 48V DC to 12v dc 40 amp converter circuit diagram 1000W Amplifier 1000w schematic diagrams solar charger schematic 24V 12v 1000W car AUDIO AMPLIFIER CIRCUIT DIAGRAM 800w class d circuit diagram schematics amplifier circuit diagram class D 1000w 12v 1000W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    C3743

    Abstract: Common Cathode RGB LEDS 5mm LT3474-1 LT3743 LT3743EFE LT3755 top mark 0506 for NXP PT120 MSS1048-103MLB 5mm RGB led 4 pin
    Text: LT3743 High Current Synchronous Step-Down LED Driver with Three-State Control DESCRIPTION FEATURES n n n n n n n n n n PWM Dimming Provides Up to 3000:1 Dimming Ratio CTRL_SEL Dimming Provides Up to 3000:1 Dimming Ratio Between Any Current Three-State Current Control for Color Mixing


    Original     		PDF LT3743 28-Pin TSSOP20E LT3476 QFN10 LT3478/LT3478-1 3743f C3743 Common Cathode RGB LEDS 5mm LT3474-1 LT3743 LT3743EFE LT3755 top mark 0506 for NXP PT120 MSS1048-103MLB 5mm RGB led 4 pin

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3