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    SQ2351ES Price and Stock

    Vishay Siliconix SQ2351ES-T1_GE3

    MOSFET P-CH 20V 3.2A SOT23-3
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    DigiKey SQ2351ES-T1_GE3 Digi-Reel 19,272 1
    • 1 $0.86
    • 10 $0.535
    • 100 $0.86
    • 1000 $0.23963
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    SQ2351ES-T1_GE3 Cut Tape 19,272 1
    • 1 $0.86
    • 10 $0.535
    • 100 $0.86
    • 1000 $0.23963
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    SQ2351ES-T1_GE3 Reel 18,000 3,000
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    Quest Components SQ2351ES-T1_GE3 16
    • 1 $0.56
    • 10 $0.448
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    Vishay Siliconix SQ2351ES-T1_BE3

    MOSFET P-CH 20V 3.2A SOT23-3
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    DigiKey SQ2351ES-T1_BE3 Cut Tape 10,299 1
    • 1 $0.86
    • 10 $0.535
    • 100 $0.86
    • 1000 $0.23963
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    SQ2351ES-T1_BE3 Reel 6,000 3,000
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    Vishay Intertechnologies SQ2351ES-T1_GE3

    Trans MOSFET P-CH 20V 3.2A Automotive AEC-Q101 3-Pin SOT-23 T/R
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    Verical SQ2351ES-T1_GE3 2,904 74
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    SQ2351ES-T1_GE3 397 36
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    • 100 $0.1676
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    Arrow Electronics SQ2351ES-T1_GE3 Cut Strips 397 30 Weeks 1
    • 1 $0.3019
    • 10 $0.2608
    • 100 $0.2089
    • 1000 $0.1676
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    Newark SQ2351ES-T1_GE3 Cut Tape 1
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    SQ2351ES-T1_GE3 Reel 3,000
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    TME SQ2351ES-T1_GE3 1,888 1
    • 1 $0.7
    • 10 $0.328
    • 100 $0.261
    • 1000 $0.234
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    Chip1Stop SQ2351ES-T1_GE3 Cut Tape 2,904
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    • 10 $0.448
    • 100 $0.233
    • 1000 $0.168
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    Vishay Intertechnologies SQ2351ES-T1_BE3

    Mosfet, P-Ch, 20V, 3.2A, Sot-23; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SQ2351ES-T1_BE3
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    Newark SQ2351ES-T1_BE3 Reel 3,000
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    SQ2351ES-T1_BE3 Cut Tape 3,000
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    Vishay Intertechnologies SQ2351ES-T1-GE3

    MOSFETs RECOMMENDED ALT SQ23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SQ2351ES-T1-GE3 Reel 120,000 3,000
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    • 10000 $0.238
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    Chip 1 Exchange SQ2351ES-T1-GE3 70,000
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    Chip1Stop SQ2351ES-T1-GE3 397
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    • 10 $0.269
    • 100 $0.2089
    • 1000 $0.184
    • 10000 $0.184
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    SQ2351ES Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ2351ES-T1_BE3 Vishay Siliconix MOSFET P-CH 20V 3.2A SOT23-3 Original PDF
    SQ2351ES-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 20V SOT23 Original PDF

    SQ2351ES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SQ2351ES

    Abstract: No abstract text available
    Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:


    Original
    PDF SQ2351ES O-236 OT-23) AEC-Q101 SQ2351ES OT-23 SQ2351ES-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC

    SQ2351ES

    Abstract: SQ2351ES-T1-GE3
    Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 • Compliant to RoHS Directive 2002/95/EC TO-236


    Original
    PDF SQ2351ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2351ES OT-23 SQ2351ES-T1-GE3 11-Mar-11 SQ2351ES-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 • Compliant to RoHS Directive 2002/95/EC TO-236


    Original
    PDF SQ2351ES O-236 OT-23) AEC-Q101 2002/95/EC SQ2351ES OT-23 SQ2351ES-T1-GE3 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: SQ2351ES_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    PDF SQ2351ES AN609, 6062u 5941u 2626m 9684u 0582m 2481m 18-Jun-10

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ2351ES www.vishay.com Vishay Siliconix P-Channel 20 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SQ2351ES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:


    Original
    PDF SQ2351ES AEC-Q101 O-236 OT-23) OT-23 SQ2351ES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU.

    DPAK/TO-252

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power Mosfets SMM Medical Devices MOSFETs - Enhanced Quality Control Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the


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    PDF Ups-2726 VMN-PL0469-1311 DPAK/TO-252

    SQJ469ep

    Abstract: SQ4483BE
    Text: Vishay Intertechnology, Inc. AEC-Q101 QUALIFIED SQ RUGGED SERIES MOSFET s ThunderFET ≥ 100 V, Low On-Resistance and Low FOM OPTIMIZED PowerPAK® SO-8L Optimum High and Low Side Combination in a 5 mm x 6 mm Package for Synchronous Buck PowerPAK SO-8L 1/2 the Size of


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    PDF AEC-Q101 AEC-Q101 TS-16949 VMN-MS6925-1406 SQJ469ep SQ4483BE

    sq4435

    Abstract: SQP120N10-09
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs SMM Medical Devices Medical Approved Process Flow and Devices for Implantable Applications Vishay offers a growing range of approved MOSFETs that can be used for the implantable medical market.


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    PDF VMN-PL0469-1505 sq4435 SQP120N10-09

    SQ2315ES

    Abstract: SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . power mosfets Automotive A pplic ations m o sf e t s w w w. v i s h a y. c o m Selector Guide Powe r MOSFETs for Automotive A pplic ations POWER MOSFETs Vishay Siliconix Dedicated Automotive Process Flow Reduces Defects


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    PDF AEC-Q101 O-262, O-263) VMN-SG2151-1009 SQ2315ES SQ2319ES SQM120P04-04L SQ2360EES SQ3456EV SQJ848EP SQ2301ES sQj980ep sq9945bey sqm10

    VMN-SG2151-1406

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs for Automotive Applications MOSFETs – AEC-Q101 Qualified RESOURCES • • • • • • • Automotive MOSFET web page: www.vishay.com/mosfets/automotive-mosfets/ Automotive parametric search: www.vishay.com/automotive-mosfets/param


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    PDF AEC-Q101 VMN-SG2151-1406 VMN-SG2151-1406

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/


    Original
    PDF AEC-Q101 VMN-SG2151-1212

    SQ3427

    Abstract: sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309
    Text: V i s h ay I n terte c h n olo g y, I n c . MOSFETs - AEC-Q101 Qualified AND TEC I INNOVAT O L OGY for Automotive Applications N HN POWER MOSFETs O 19 62-2012 Resources • Automotive MOSFET Web Page: http://www.vishay.com/mosfets/automotive-mosfets/ • Application notes: http://www.vishay.com/mosfets/automotive-mosfets/


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    PDF AEC-Q101 VMN-SG2151-1209 docu33-4-9337-2727 SQ3427 sq2308 SQJ463 SQM120P04-04L SQJ401EP SQ4532EY tsop-6 footprint sq2361 SQD2 sq2309