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    SI1303DL Search Results

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    SI1303DL Price and Stock

    Vishay Siliconix SI1303DL-T1-E3

    MOSFET P-CH 20V 670MA SC70-3
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    DigiKey SI1303DL-T1-E3 Digi-Reel 1
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    SI1303DL-T1-E3 Cut Tape
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    RS SI1303DL-T1-E3 Bulk 3,000
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    Vishay Siliconix SI1303DL-T1-GE3

    MOSFET P-CH 20V 670MA SC70-3
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    DigiKey SI1303DL-T1-GE3 Reel
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    Vishay Intertechnologies SI1303DL-T1-E3

    Transistor; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:720Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:12V; Gate Source Threshold Voltage Max:1.4V; Power Dissipation:340Mw Rohs Compliant: Yes |Vishay SI1303DL-T1-E3
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    Newark SI1303DL-T1-E3 Cut Tape 3,000
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    Vishay Intertechnologies SI1303DLT1

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    Bristol Electronics SI1303DLT1 6,501
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    ComSIT USA SI1303DLT1 2,235
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    Vishay Huntington SI1303DL-T1-E3

    MOSFET P-CH 20V 670MA SOT323-3
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    Win Source Electronics SI1303DL-T1-E3 15,000
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    SI1303DL Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si1303DL Vishay Intertechnology P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET Original PDF
    Si1303DL SPICE Device Model Vishay P-Channel 2.5-V (G-S) MOSFET Original PDF
    SI1303DL-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3 Original PDF
    SI1303DL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 670MA SOT323-3 Original PDF

    SI1303DL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si1303DL-T1-gE3

    Abstract: sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. sc70-3 PCB PAD SI1303D SOT-323 31 MOSFET sc-70 package pcb layout F MARKING 6PIN

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 11-Mar-11

    SI1303DL-T1-E3

    Abstract: Si1303DL
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL S-50151Rev. 07-Feb-05

    Si1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 18-Jul-08

    in 4751

    Abstract: AN609 Si1303DL
    Text: Si1303DL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si1303DL AN609 22-Mar-07 in 4751

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 18-Jul-08

    Si1303DL-T1-gE3

    Abstract: Si1303DL
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08

    Si1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free


    Original     		PDF Si1303DL OT-323 SC-70 Si1303DL-T1 Si1303DL-T1-E3 08-Apr-05

    Si1303DL

    Abstract: 31 MOSFET sot-323
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability


    Original     		PDF Si1303DL OT-323 SC-70 S-03721--Rev. 07-Apr-03 31 MOSFET sot-323

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 18-Jul-08

    SI1303DL

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability


    Original     		PDF Si1303DL OT-323 SC-70 08-Apr-05

    S-63639

    Abstract: S-63639-Rev SI1303DL
    Text: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code


    Original     		PDF Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 S-63639-Rev

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 18-Jul-08

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 29-May-01

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 29-May-01

    Untitled

    Abstract: No abstract text available
    Text: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si1303DL 2002/95/EC OT-323 SC-70 Si1303DL-T1-E3 Si1303DL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si1303DL

    Abstract: No abstract text available
    Text: SPICE Device Model Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si1303DL 08-Apr-05

    EMC4000

    Abstract: MEC5004 MEC5004 ECE5018 ECE5018 dell inverter pinout isl6260 pinout dell battery HAL00 nvg72m macallan IV SIO pinout
    Text: A B C D E COMPAL CONFIDENTIAL 1 MODEL NAME : HAL00 PCB NO : LA-2792 COMPAL P/N : 45135731L01 1 Travis DIS Schematics Document 2 2 uFCPGA Mobile Yonah Intel Calistoga + ICH7M 2006-01-20 REV : 1.0 (DELL: A00) 3 3 4 4 DELL CONFIDENTIAL/PROPRIETARY MB PCB Part Number


    Original     		PDF HAL00 LA-2792 45135731L01 DAA0000050L 45135731L01 DAA0000051L item19. LA-2792 EMC4000 MEC5004 MEC5004 ECE5018 ECE5018 dell inverter pinout isl6260 pinout dell battery nvg72m macallan IV SIO pinout

    GST5009-LF

    Abstract: GST5009LF g920at24U 88E8053-NNC1 FBMA-L11-201209-221LMA30T LG crt TV flyback transformer la3291 g781f compal sst39vf080-70-4c-ei
    Text: 5 4 3 2 1 Project Name: PecosII IDX80 D D PCB Serial Number: LA-3291 PecosII Schematics Document C C Intel Merom Dual Core LV 1.5G /Yonah Single Core ULV 1.2G + Calistoga GM + ICH7-M 2007-02-26 B B REV: X0.6 A A Compal Electronics, Inc.(KunShan) Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF IDX80) LA-3291 PecosII-IDX80-LA3291 GST5009-LF GST5009LF g920at24U 88E8053-NNC1 FBMA-L11-201209-221LMA30T LG crt TV flyback transformer la3291 g781f compal sst39vf080-70-4c-ei

    Si1303DL

    Abstract: Si1303EDL
    Text: Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LD D XX YY Marking Code


    Original     		PDF Si1303EDL OT-323 SC-70 08-Apr-05 Si1303DL

    NTS2101PT

    Abstract: No abstract text available
    Text: LTM4676 Dual 13A or Single 26A µModule Regulator with Digital Power System Management Description Dual, Fast, Analog Loops with Digital Interface for Control and Monitoring n Wide Input Voltage Range: 4.5V to 26.5V n Output Voltage Range: 0.5V to 5.4V 4V on V


    Original     		PDF LTM4676 400kHz 16-Bit LTC2977/LTC2974 16-Bit 4676fc com/LTM4676 NTS2101PT

    Untitled

    Abstract: No abstract text available
    Text: LTM4676 Dual 13A or Single 26A µModule Regulator with Digital Power System Management DESCRIPTION Dual, Fast, Analog Loops with Digital Interface for Control and Monitoring n Wide Input Voltage Range: 4.5V to 26.5V n Output Voltage Range: 0.5V to 5.4V 4V on V


    Original     		PDF LTM4676 400kHz 16-Bit LTC3880/LTC3883 16-Bit LTC2977/LTC2974 4676fa com/LTM4676