siemens igbt
Abstract: No abstract text available
Text: SIEMENS SGP20N60 P relim inary data IGBT • Latch-up free • Avalanche rated P in i Pin 2 G Ul Type 600V SGP20N60 Pin 3 C E b Package Ordering Code 20A TO-220 AB Q67040-A . . . . Maximum Ratings Symbol Values LU Parameter 600 Collector-emitter voltage Coilector-gate voltage
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SGP20N60
SGP20N60
Q67040-A
O-220
Apr-08-1998
BUP602D
PT05155
siemens igbt
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siemens igbt BSM 25 gd
Abstract: siemens igbt BSM 10 siemens igbt BSM 100 ECONOPACK 2K IGBT Power Module siemens bsm
Text: SIEMENS BSM 20 GD 60 DN2 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate LU Type b Package Ordering Code BSM 20 GD 60 DN2 600V 20A ECONOPACK 2 C67076-A2511-A67 BSM 20 GD 60DN2E3224
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60DN2E3224
C67076-A2511-A67
C67070-A2511-A67
60DN2E3224
siemens igbt BSM 25 gd
siemens igbt BSM 10
siemens igbt BSM 100
ECONOPACK 2K
IGBT Power Module siemens bsm
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SGH80N60RUFD
Abstract: bup314 equivalent bup314d SGH30N60UFD SGU06N60 BUP314 motorola diode cross reference mgy20n120d IXDH30N120AU1 SGP15N120
Text: Infineon Technologies Cross Reference List Fast IGBT & DuoPack Company Product Name Fairchild * Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*) Fairchild (*)
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SGR2N60UFD
SGP10N60RUF
SGP10N60RUFD
SGH10N60RUFD
SGW10N60RUFD
SGP06N60
SKB10N60
BUP400D
SGB15N60
SGH80N60RUFD
bup314 equivalent
bup314d
SGH30N60UFD
SGU06N60
BUP314
motorola diode cross reference
mgy20n120d
IXDH30N120AU1
SGP15N120
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2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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N60S5
Abstract: triac ansteuerung 3.5kw pfc smps 450W 2kw mosfet mos sot223, 300v SPN-25 mosfet 1000v smps 5kw 2kw pfc welding
Text: COOLMOS TM COOLMOSTM von SIEMENS* Ein Quantensprung in der Hochvolt MOSFET-Technologie macht Anwenderträume wahr Lorenz L., März M., Deboy G. Power-MOSFET zählen seit nunmehr 20 Jahren zu den bedeutendsten Komponenten in der Transistorwelt. Mit einem Marktvolumen von 1.4 Mrd. US$ in 1997 und einem prognostizierten
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10A600V
Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU
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HGIP12NB0B3
115J101
IXGP10N60A
IXGH10N60A
HGTP20N6QB3
GT25JT01
IXGH20N6QA
IXGH24N6QA
IXGH40N60A
IXGH50N6
10A600V
1XGH20N60AU1
IGBT cross reference
IXSH20N60AU1
20a600v
12A600V
CT60AM-20
5N60RUFD
5A1200V
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYH20N65C3
IC110
O-247
20N65C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 20A 2.5V 28ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N65C3D1
IC110
20-60kHz
O-220
IF110
20N65C3
0-13-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYA20N65C3 IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 20A 2.5V 28ns TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings
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IXYA20N65C3
IXYH20N65C3
IC110
O-263
20N65C3
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spg30n60
Abstract: 2kW flyback PFC 2kw pfc coolmos pspice model power BUZ 20A 600V coolmostm lorenz ISPSD n mosfet depletion pspice model parameters 2kw mosfet SPP07N60S5 SPP20N60S5
Text: COOLMOS - a new milestone in high voltage Power MOS* L. Lorenz, G. Deboy, A. Knapp and M. März Siemens AG, Semiconductor Division, Balanstr. 73, 81541 Munich, Germany I. INTRODUCTION Recently a new technology for high voltage Power MOSFETs has been introduced – the CoolMOS™. Based on the new
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IGBT rectifier theory
Abstract: static characteristics of mosfet and igbt IGBT THEORY AND APPLICATIONS mosfet switch ultra fast IGBT THEORY AND APPLICATIONS 400V
Text: New Power Module Structure for Efficiency Improvement in Fast Switching Power Applications >50kHz, >1kW Temesi, Zsadany, Frisch Mar. 2005, TYCO Electronics / Power Systems Power applications are forced to work at higher frequencies. This is caused by the
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50kHz,
IGBT rectifier theory
static characteristics of mosfet and igbt
IGBT THEORY AND APPLICATIONS
mosfet switch ultra fast
IGBT THEORY AND APPLICATIONS 400V
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AN-CoolMOS-01
Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
Text: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions
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AN-CoolMOS-07
Room14J1
Room1101
AN-CoolMOS-01
AN-CoolMOS-04
SPW17N80C2
irfp450 mosfet full bridge
transistor SMD v1 MOSFET
siemens semiconductor 1988 led
smps* ZVT
47n60s5 to247
SPN04N60C2
SPN01N60S5
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient
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20N120B
O-268
O-247
728B1
123B1
065B1
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
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20N120B
IC110
O-268
O-247
728B1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
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igbt for induction heating
Abstract: 15v140
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
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20N120B
O-268
IC110
O-247
728B1
123B1
728B1
065B1
20N120B
igbt for induction heating
15v140
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IXGQ90N33
Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package
Text: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs
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IXGQ90N33TCD4
90N33TC
5-30-07-C
IXGQ90N33
90n33
IXGQ90N33TCD
IXGQ90N33TCD4
90N33T
g90n33tc
IXgq90n
IXGQ90
TO-3P package
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Untitled
Abstract: No abstract text available
Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings
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20N120B
O-268
IC110
728B1
123B1
728B1
065B1
20N120B
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igbt for induction heating ic
Abstract: No abstract text available
Text: Advanced Technical Information High Voltage IGBT Designed for inductive heating applications IXGQ 20N120B VCES IXGP 20N120B IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V
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20N120B
IC110
O-220
20N120B
igbt for induction heating ic
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IXGQ150N33TC
Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
Text: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30
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IXGA150N33TC
IXGQ150N33TC
IXGQ150N33TCD1
150N33TC
150N33TCD1
O-263
150N33TC
9-04-08-B
IXGQ150N33TC
IXGQ150N33TCD1
siemens igbt 75a
IXGA150N33TC
g150n
IXGA150
IXGQ150
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10N65C
Abstract: No abstract text available
Text: Advance Technical Information IXYP10N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat) tfi(typ) = 650V 7A 2.6V 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions
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IXYP10N65C3D1M
IC110
20-60kHz
O-220
IF110
10N65C3
1-14-A
10N65C
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IXGH50N60C2
Abstract: No abstract text available
Text: IXGH50N60C2 IXGT50N60C2 HiPerFASTTM High Speed IGBT C2-Class VCES = IC110 = VCE sat tfi(typ) = 600V 50A 2.7V 48ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V
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IXGH50N60C2
IXGT50N60C2
IC110
O-268
50N60C2
IXGH50N60C2
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50N60B2
Abstract: 50n60
Text: HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 50N60B2 IXGT 50N60B2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30
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50N60B2
IC110
O-247
O-268
50N60B2
50n60
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IXYP20N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N120C3
IXYH20N120C3
IC110
O-220
108ns
O-247
20N120C3
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