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    20N120B Search Results

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    20N120B Price and Stock

    IXYS Corporation IXYA20N120B4HV

    IGBT 1200V 20A GENX4 XPT TO263D2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYA20N120B4HV Tube 348 1
    • 1 $11.18
    • 10 $11.18
    • 100 $8.5183
    • 1000 $7.0808
    • 10000 $7.0808
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    Mouser Electronics IXYA20N120B4HV 1,244
    • 1 $11.18
    • 10 $9.85
    • 100 $8.51
    • 1000 $6.94
    • 10000 $6.94
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    Newark IXYA20N120B4HV Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.91
    • 10000 $6.91
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    TTI IXYA20N120B4HV Tube 50 50
    • 1 -
    • 10 -
    • 100 $9.32
    • 1000 $9.32
    • 10000 $9.32
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    IXYS Corporation IXGP20N120B3

    IGBT 1200V 36A 180W TO220
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    DigiKey IXGP20N120B3 Tube 320 1
    • 1 $6.62
    • 10 $6.62
    • 100 $4.7254
    • 1000 $3.75249
    • 10000 $3.51622
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    Mouser Electronics IXGP20N120B3
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.72
    • 10000 $4.72
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    TTI IXGP20N120B3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $4.87
    • 10000 $4.87
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    TME IXGP20N120B3 46 1
    • 1 $5.52
    • 10 $4.38
    • 100 $3.94
    • 1000 $3.94
    • 10000 $3.94
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    IXYS Corporation IXGP20N120B

    IGBT 1200V 40A 190W TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGP20N120B Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $5.86157
    • 10000 $5.86157
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    IXYS Corporation IXGT20N120B

    IGBT PT 1200V 40A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT20N120B Box 1
    • 1 $6.25
    • 10 $5.357
    • 100 $4.4642
    • 1000 $3.5451
    • 10000 $3.32189
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    IXYS Corporation IXGH20N120B

    IGBT 1200V 40A 190W TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH20N120B Tube
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    Find more 20N120B price and stock on Findchips.com

    20N120B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    20n120

    Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient


    Original     		PDF 20N120B O-268 O-247 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140

    IXGH20N120BD1

    Abstract: IXGH 20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1

    20N120BD1

    Abstract: ixys dsep 8-12a
    Text: High Voltage IGBT with Diode IXGP 20N120B IXGP 20N120BD1 VCES IC25 VCE sat Designed for induction heating applications = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 20N120B 20N120BD1 IC110 O-220 728B1 123B1 065B1 20N120BD1 ixys dsep 8-12a

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		PDF 20N120B IC110 O-268 O-247 728B1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		PDF 20N120B O-268 IC110 728B1 123B1 728B1 065B1 20N120B

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		PDF 20N120B 20N120BD1 IC110 728B1 123B1 065B1

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Data High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		PDF 20N120BD1 20N120BD1 O-247AD O-268 O-247AD/TO-268

    igbt for induction heating

    Abstract: 15v140
    Text: High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V Maximum Ratings


    Original     		PDF 20N120B O-268 IC110 O-247 728B1 123B1 728B1 065B1 20N120B igbt for induction heating 15v140

    igbt induction cooker

    Abstract: induction cooker application notes induction heating cooker siemens induction cooker
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGQ 20N120B IXGQ 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) V A V ns BD1 Maximum Ratings TO-3P (IXGQ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES


    Original     		PDF 20N120B 20N120BD1 IC110 728B1 123B1 728B1 065B1 igbt induction cooker induction cooker application notes induction heating cooker siemens induction cooker

    igbt for induction heating ic

    Abstract: No abstract text available
    Text: Advanced Technical Information High Voltage IGBT Designed for inductive heating applications IXGQ 20N120B VCES IXGP 20N120B IC25 VCE sat Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V


    Original     		PDF 20N120B IC110 O-220 20N120B igbt for induction heating ic

    igbt induction cooker

    Abstract: induction heating cooker IXGH20N120BD1
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 IC110 O-268 0-12A/DSEC 0-12A igbt induction cooker induction heating cooker IXGH20N120BD1

    Untitled

    Abstract: No abstract text available
    Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 20N120BD1 IC110 O-268 0-12A/DSEC 0-12A

    7N60B equivalent

    Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2
    Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain


    Original     		PDF 7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2