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    IXGH50N6 Price and Stock

    IXYS Corporation IXGH50N60B

    IGBT 600V 75A 300W TO247AD
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    IXYS Corporation IXGH50N60A

    IGBT 600V 75A 250W TO247AD
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    IXYS Corporation IXGH50N60B2

    IGBT 600V 75A 400W TO247
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    IXYS Corporation IXGH50N60C4

    IGBT 600V 90A 300W TO247
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    IXYS Corporation IXGH50N60C2

    IGBT 600V 75A 400W TO247
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    IXGH50N6 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGH50N60A IXYS 600V HiPerFAST IGBT Original PDF
    IXGH50N60AS IXYS 600V HiPerFAST IGBT Original PDF
    IXGH50N60B IXYS Hiperfast IGBT Original PDF
    IXGH50N60B IXYS HiPerFAST IGBT Original PDF
    IXGH50N60B Unknown HiPerFAST IGBT Original PDF
    IXGH50N60B2 IXYS IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT Original PDF
    IXGH50N60BD2 IXYS 600V HiPerFAST IGBT with HiPerFRED Original PDF
    IXGH50N60BD3 IXYS 600V HiPerFAST IGBT with HiPerFRED Original PDF
    IXGH50N60C2 IXYS HiPerFAST IGBT C2-Class High Speed IGBTs Original PDF
    IXGH50N60C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 90A 300W TO247 Original PDF

    IXGH50N6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50n60

    Abstract: No abstract text available
    Text: High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 IC110 O-263 IC110 O-220AB O-247 50N60B4 50n60

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High-Gain IGBTs IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		PDF IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 IC110 O-263 IC110 O-220AB O-247 50N60B4

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 Low-Vsat PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA50N60B4 IXGP50N60B4 IXGH50N60B4 O-263 O-220AB 50N60B4

    IXGH50N60C2

    Abstract: No abstract text available
    Text: IXGH50N60C2 IXGT50N60C2 HiPerFASTTM High Speed IGBT C2-Class VCES = IC110 = VCE sat  tfi(typ) = 600V 50A 2.7V 48ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M 600 600 V


    Original     		PDF IXGH50N60C2 IXGT50N60C2 IC110 O-268 50N60C2 IXGH50N60C2

    IXGH50N60C4D1

    Abstract: IXGQ50N60C4D1 G50N60 g50n
    Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 IXGH50N60C4D1 G50N60 g50n

    g50n60

    Abstract: g50n
    Text: High-Gain IGBTs IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 IC110 O-263 IC110 O-220AB O-247 50N60C4 g50n60 g50n

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/ Diode VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGQ50N60C4D1 IXGH50N60C4D1 High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IC110 IXGQ50N60C4D1 IXGH50N60C4D1 IF110 O-247

    g50n60

    Abstract: No abstract text available
    Text: High-Gain IGBTs VCES = 600V IC110 = 46A VCE sat ≤ 2.3V IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 O-263 O-220AB 50N60C4 g50n60

    G50N60

    Abstract: 50n60 50N6 IXGH50N60A IXGH50N60AS g50n 50N60A g50n60 application DSA002033
    Text: HiPerFASTTM IGBT IXGH50N60A VCES IXGH50N60AS IC25 VCE sat tfi Surface Mountable Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 75 A I C90 TC = 90°C


    Original     		PDF IXGH50N60A IXGH50N60AS O-247 50N60AS) G50N60 50n60 50N6 IXGH50N60A g50n 50N60A g50n60 application DSA002033

    g50n60

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 36A VCE sat ≤ 1.80V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous


    Original     		PDF IXGH50N60B4D1 IXGQ50N60B4D1 IC110 O-247 IC110 IF110 g50n60

    G50N60

    Abstract: IXGH50N60C4D1 IXGQ50N60C4D1
    Text: High-Gain IGBTs w/ Diode IXGQ50N60C4D1 IXGH50N60C4D1 VCES = 600V IC110 = 36A VCE sat ≤ 2.50V High-Speed PT Trench IGBTs TO-3P (IXGQ) G C E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V


    Original     		PDF IXGQ50N60C4D1 IXGH50N60C4D1 IC110 IC110 IF110 O-247 G50N60 IXGH50N60C4D1

    g50n60

    Abstract: 50N60C4 IXGA50N60C4 IXGP50N60C4 IXGH50N60C4
    Text: High-Gain IGBTs IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 VCES = 600V IC110 = 46A VCE sat ≤ 2.3V High-Speed PT Trench IGBT TO-263 AA (IXGA) G E C (Tab) TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGA50N60C4 IXGP50N60C4 IXGH50N60C4 IC110 O-263 IC110 O-220AB O-247 Le00V 50N60C4 g50n60 IXGH50N60C4

    IXGQ50N60B4D1

    Abstract: IXGH50N60B4D1 G50N60
    Text: High-Gain IGBTs w/Diode IXGH50N60B4D1 IXGQ50N60B4D1 VCES = 600V IC110 = 50A VCE sat ≤ 1.8V Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF IXGH50N60B4D1 IXGQ50N60B4D1 IC110 O-247 IC110 IF110 IXGQ50N60B4D1 G50N60

    Untitled

    Abstract: No abstract text available
    Text: High-Gain IGBTs w/Diode VCES = 600V IC110 = 50A VCE sat ≤ 1.8V IXGH50N60B4D1 IXGQ50N60B4D1 Low-Vsat PT Trench IGBTs TO-247 (IXGH) G Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM Continuous Transient


    Original     		PDF IC110 IXGH50N60B4D1 IXGQ50N60B4D1 O-247 IF110

    IXGD32N60B-5X

    Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
    Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43


    Original     		PDF IXGD28N30-43 IXGD40N30-5X IXGD12N60B-3X IXGD31N60-4X IXGD41N60-5X IXGD60N60-7Y IXGD200N60B-9X IXGD2N100-1M IXGD4N100-1T IXGD8N100-2L IXGD32N60B-5X ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXGH50N60BD1-P1

    Abstract: ISOPLUS247TM 60N60U1
    Text: Advanced Technical Information IXGR 60N60U1 Low VCE sat IGBT with Diode ISOPLUS247TM VCES IC25 VCE(sat) = = = 600 V 75 A 1.7 V (Electrically Isolated Back Surface) Symbol Test Conditions Maximum Ratings ISOPLUS247TM (IXGR) VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF ISOPLUS247TM 60N60U1 IC100 50/60Hz, IXGH50N60BD1-P1 IXGH50N60BD1-P1 ISOPLUS247TM 60N60U1

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    Untitled

    Abstract: No abstract text available
    Text: □IX Y S IXGH50N60A IXGH50N60AS HiPerFAST IGBT Surface Mountable V CES ^C25 V CE sat t 'fi 600 V 75 A 2.7 V 275 ns u Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous


    OCR Scan     		PDF IXGH50N60A IXGH50N60AS O-247 50N60AS)

    10A600V

    Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V
    Text: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU


    OCR Scan     		PDF HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V

    IXGD40N60A

    Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
    Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60


    OCR Scan     		PDF IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    T0247AC

    Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m


    OCR Scan     		PDF B03M0WH0CTb npe06pa30Baiennx paUP212 T0220AB BUP213 BUP313 T0218AB BUP313D T0247AC IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212