IXGQ90 Search Results

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IXYS Corporation IXGQ90N27PB IGBT 270V 90A 150W TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGQ90N27PB	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGQ90N33TCD1 IGBT 330V 90A 200W TO3P
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DigiKey	IXGQ90N33TCD1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Integrated Circuits Division IXGQ90N33TCD1 IGBT DIS.DIODE SINGLE 38A 330V TRENCH TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXGQ90N33TCD1					1 $4.03755 10 $4.03755 100 $3.6705 1000 $3.6705 10000 $3.6705	Get Quote

IXGQ90 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXGQ90N27PB		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 270V 90A 150W TO3P		Original	PDF

IXGQ90 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IXGQ90N33TBD1 Abstract: IXGQ90N33 90n33 90N33TB IXgq90n ixgq90n33t Text: IXGQ90N33TBD1 Trench Gate IGBT VCES = = ICP VCE sat ≤ For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A 330V 360A 1.6V TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s	Original	PDF	IXGQ90N33TBD1 90N33TB 5-27-08-B IXGQ90N33TBD1 IXGQ90N33 90n33 IXgq90n ixgq90n33t
IXGQ90N33 Abstract: 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T Text: IXGQ90N33TB Trench Gate High Speed IGBT VCES = = ICP VCE sat ≤ 330V 360A 1.6V For PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM 330 V ±30 V 90 A TO-3P IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s	Original	PDF	IXGQ90N33TB 90N33TB 5-27-08-B IXGQ90N33 90n33 IXGQ90N33TB IC tl 072 IGBT I rms 45A IXGQ90 IXgq90n 90N33T
IXGQ90N33 Abstract: 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc 90N33TC IXgq90n IXGQ90 TO-3P package Text: Preliminary Technical Information Plasma Display Power IGBT IXGQ90N33TCD4 Trench Gate High Speed Symbol Test Conditions VCES TJ = 25°C to 150°C 330 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICP TJ ≤ 150°C, tp ≤ 1 s 360 A IDP TJ ≤ 150°C, tp ≤ 1μs	Original	PDF	IXGQ90N33TCD4 90N33TC 5-30-07-C IXGQ90N33 90n33 IXGQ90N33TCD IXGQ90N33TCD4 90N33T g90n33tc IXgq90n IXGQ90 TO-3P package
ixgq90n27 Abstract: IXGQ90N27PB IXgq90n TO-3P package Text: Preliminary Technical Information PolarTM VCES = = ICP VCE sat ≤ IXGQ90N27PB IGBT for PDP Applications Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings VGEM TO-3P 270 V ±30 V 90 A IC25 TC = 25°C, IGBT chip capability ICPEAK I C(RMS) TJ ≤ 150°C, tp ≤ 1 s, D ≤ 1%	Original	PDF	IXGQ90N27PB ixgq90n27 IXGQ90N27PB IXgq90n TO-3P package
IXGQ90N33TCD1 Abstract: ixgq90n33 IXGA90N33TC 90N33TCD1 90n33 90N33TC IXGQ90N33TC IXGQ90N33TCD Text: Trench Gate, High Speed, IGBTs IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 For PDP Applications VCES = ICP = VCE sat ≤ 330V 360A 1.80V 90N33TCD1 90N33TC Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 330 V VGES VGEM Continuous Transient ±20	Original	PDF	IXGA90N33TC IXGQ90N33TC IXGQ90N33TCD1 90N33TC 90N33TCD1 IC110 O-263 062in. 5-30-07-C IXGQ90N33TCD1 ixgq90n33 90N33TCD1 90n33 90N33TC IXGQ90N33TCD
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250