BUP314
Abstract: Q67040-S4517 bup314 equivalent IGW25T120
Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology • • • • • • • • C Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : G E - Frequency Converters - Uninterrupted Power Supply
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IGW25T120
BUP314
P-TO-24nformation
Jul-02
BUP314
Q67040-S4517
bup314 equivalent
IGW25T120
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bup314
Abstract: g25t120 bup314 equivalent g25t
Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply
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IGW25T120
BUP314
g25t120
bup314 equivalent
g25t
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BUP314
Abstract: bup314 equivalent
Text: Preliminary IGW25T120 TrenchStoP Series Low Loss IGBT in Trench and Fieldstop technology • • • C • • • Approx. 1.0V reduced VCE sat BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply
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IGW25T120
BUP314
O-247AC
Jan-02
bup314 equivalent
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k25t120
Abstract: BUP314D ikw25t120 K25T12 BUP314 PG-TO-247-3-21 bup314D equivalent K25t
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
BUP314D
ikw25t120
K25T12
BUP314
PG-TO-247-3-21
bup314D equivalent
K25t
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PDF
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bup314d
Abstract: BUP314 ikw25t120 Q67040-S4518
Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs
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Original
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IKW25T120
BUP314D
Jul-02
bup314d
BUP314
ikw25t120
Q67040-S4518
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PDF
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k25t120
Abstract: No abstract text available
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
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PDF
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BUP314D
Abstract: integrated circuit MAR 521
Text: Preliminary IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • C • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs
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Original
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IKW25T120
BUP314D
Mar-02
integrated circuit MAR 521
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PDF
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k25t120
Abstract: ikw25t120 BUP314D 25A 1200V BUP314 1200v 25A to247 PG-TO-247-3 K25-T
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
ikw25t120
BUP314D
25A 1200V
BUP314
1200v 25A to247
PG-TO-247-3
K25-T
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PDF
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k25t120
Abstract: No abstract text available
Text: IKW25T120 TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
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PDF
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k25t120
Abstract: No abstract text available
Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
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PDF
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k25t120
Abstract: 1200V BUP314D equivalent
Text: IKW25T120 TrenchStop Series ^ Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE sat and 0.5V reduced VF compared to BUP314D
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Original
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IKW25T120
BUP314D
k25t120
1200V
BUP314D equivalent
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PDF
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g25t120
Abstract: bup314 equivalent BUP314 IGW25T120 200nC
Text: IGW25T120 TrenchStop Series ^ Low Loss IGBT in Trench and Fieldstop technology C • • • • • • • • • • Approx. 1.0V reduced VCE sat compared to BUP314 Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply
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Original
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IGW25T120
BUP314
g25t120
bup314 equivalent
IGW25T120
200nC
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PDF
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BUP314
Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for
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O-220
O-218
BUP314
BUP307
igbt types
siemens bup314
BUP401
BUZ334
BUZ MOSFET
MOSFET welding INVERTER
334 mosfet
flyback inverter welding
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PDF
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2kW flyback PFC
Abstract: transistor SMD DK -RN SMPS flyback 2kW UPS SIEMENS UMAX 450W SMPS smps 450W 2kw mosfet PFC 5kw P-CHANNEL 25A TO-247 POWER MOSFET siemens soft starter
Text: Semiconductor Group – find us at an office near you AUS Siemens Ltd., Head Office 544 Church Street Richmond Melbourne , Vic. 3121 ట (+61) 3-9420 7111 Fax (+61) 3-9420 72 75 Email: mark.walsh@siemens.com.au D Siemens AG Von-der-Tann-Straße 30 D-90439 Nürnberg
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Original
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D-90439
D-70499
D-81679
B-1060
N60S5
O-220
OT-223
2kW flyback PFC
transistor SMD DK -RN
SMPS flyback 2kW
UPS SIEMENS
UMAX 450W SMPS
smps 450W
2kw mosfet
PFC 5kw
P-CHANNEL 25A TO-247 POWER MOSFET
siemens soft starter
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PDF
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FN1016
Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773
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2N1112
2N1212
2N1217
2N1711
2N2219A
2N2222
2N2222A
2N2369
2N2369A
FN1016
2sC9012
on4409
on4673
ON4843
C9012
S2000A3
bul310xi
2SD5080
MN1016
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PDF
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BUP213
Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S
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O-218AB
O-220AB
O-220
O-220FP
O-247
O-262
O-252
O-263
OT-323
OT-363
BUP213
BSS123L6327
BSS123E6327
bup314d
IPD06N03LAG
BSP170PE6327T
BSP315
SPD06N80C3XT
BSP295-L6327
BSP129E6327
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SIPC69N60C3
Abstract: SPW20N60S5 equivalent sipc01n80c2 P-Channel Depletion Mosfets SKP15N60 BUZ78 equivalent SPNA2N80C2 BUP314 SIPC26N80C3 TDA16822
Text: File name Products Silicon Carbide Diodes thinQ 300V / 600V SDP06S60 SDP04S60 SDB10S30 SiC_Pspice.zip Smart High Side Switches High-Current PROFET BTS555 BTS550P BTS650P PROFET_Pspice.exe Smart Low Side Switches TEMPFET / Speed TEMPFET HITFET BTS114A BSP78
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SDP06S60
SDP04S60
SDB10S30
BTS555
BTS550P
BTS650P
BTS114A
BSP78
BTS115A
BTS134D
SIPC69N60C3
SPW20N60S5 equivalent
sipc01n80c2
P-Channel Depletion Mosfets
SKP15N60
BUZ78 equivalent
SPNA2N80C2
BUP314
SIPC26N80C3
TDA16822
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PDF
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BUP314D
Abstract: No abstract text available
Text: SIEMENS BUP 314D IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Type BUP314D VfcE h 1200V 42A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code
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OCR Scan
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BUP314D
O-218AB
Q67040-A4226-A2
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PDF
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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OCR Scan
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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PDF
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siemens 314S
Abstract: BUP 314S 314S
Text: SIEMENS BUP 314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Parameter
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OCR Scan
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BUP314S
O-218
C67040-A4207-A2
Feb-07-1997
siemens 314S
BUP 314S
314S
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUP314S Preliminary data IGBT • High switching speed • Very low switching losses • Low tail current • Latch-up free • Avalanche rated Type ^CE BUP 314S 1200V 25A h Package Ordering Code TO-218 AB C67040-A4207-A2 Maximum Ratings Param eter
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OCR Scan
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BUP314S
O-218
C67040-A4207-A2
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PDF
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leistungstransistoren
Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m
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OCR Scan
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O-220
BUZ12A
BUZ11S2
BUZ10S2
O-218
346S2
BUP410D
leistungstransistoren
bup314d
buz 342 G
siemens 230 95 O
BUP 307D
BUZ,350
BUZ,271
BUP400D
bup313d
BUP314
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PDF
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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OCR Scan
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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PDF
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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OCR Scan
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BUZ10S2
BUZ11A
BUZ11S2
BUZ12A
O-220
O-218
BUP 312
buz 91 f
BUP 303 IGBT
DIODE BUZ 537
BUP 203
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PDF
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