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IXGQ150N33TC Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150 Text: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30	Original	PDF	IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 150N33TC 150N33TCD1 O-263 150N33TC 9-04-08-B IXGQ150N33TC IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
IXGP70N33 Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250 Text: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim	Original	PDF	D-68623 IXBOD1-08 IXBOD1-09 IXBOD1-10 DSEP30-06BR DSEP30-12CR IXGP70N33 IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
LTED Abstract: TO-238 Text: _ 4686226 _ - , _ - I X Y S CORP D Ë J HbBbEEb . □ □ D O lb S — ^ -7 * - 3 ^ - / 3 H MOSBLOCIGBT Phase-Leg Modules Inverter Series High Speed Part Number CollectorVoltage Vces (Volts) Collector Current Id @ 25 °C Case lc(conl) IC (P u lted ) (Amps)	OCR Scan	PDF	IXGQ200N100Y3 IXGQ150N100Y3 IXGQ100N100Y3 IXGQ200N60Y3 IXGQ150N60Y3 IXGQ75N100Y4 IXGQ50N100Y4 IXGQ25N100Y4 IXGQ100N60Y4 IXGQ75N60Y4 LTED TO-238
DIN 46249 TERMINALS Abstract: ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4 Text: I X Y S CORP IS E D 4ti8b25fcj O O O O S S O T ]\/[OSBLOC MODULES The MOSBLOC family of isolated modules are designed for high power industrial and commercial applica tions requiring improved ruggedness and efficiency. They are available with either IXYS* advanced MOSIGBTs	OCR Scan	PDF	4ti8b25fcj DIN 46249 TERMINALS ixgn50n100 1XGQ150N6QY3 IXGQ50N100Y4