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    20N120C3 Search Results

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    20N120C3 Price and Stock

    IXYS Corporation IXYN120N120C3

    IGBTs SOT227 1200V 120A XPT
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    Mouser Electronics IXYN120N120C3 289
    • 1 $36.85
    • 10 $28.34
    • 100 $27.81
    • 1000 $27.81
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    TTI IXYN120N120C3 Tube 300
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    • 1000 $37.08
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    IXYS Corporation IXYH20N120C3D1

    IGBTs XPT 1200V IGBT GenX3 XPT IGBT
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    Mouser Electronics IXYH20N120C3D1 79
    • 1 $11.12
    • 10 $11.12
    • 100 $6.89
    • 1000 $5.15
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    TTI IXYH20N120C3D1 Tube 300
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    • 1000 $7.01
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    IXYS Corporation IXYP20N120C3

    IGBTs GenX3 1200V XPT IGBT
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    Mouser Electronics IXYP20N120C3 18
    • 1 $5.94
    • 10 $5.94
    • 100 $4.04
    • 1000 $3.69
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    TTI IXYP20N120C3 Tube 300
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    • 1000 $3.7
    • 10000 $3.7
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    IXYS Corporation IXYK120N120C3

    IGBTs 1200V 220A XPT IGBT
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    Mouser Electronics IXYK120N120C3 6
    • 1 $34.9
    • 10 $33.91
    • 100 $24.17
    • 1000 $24.17
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    TTI IXYK120N120C3 Tube 300
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    • 1000 $22.83
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    IXYS Corporation IXYX120N120C3

    IGBTs PLUS247 1200V 120A GENX3
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    Mouser Electronics IXYX120N120C3 1
    • 1 $35.23
    • 10 $35.06
    • 100 $26.33
    • 1000 $26.33
    • 10000 $26.33
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    TTI IXYX120N120C3 Tube 300
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    • 100 -
    • 1000 $26.34
    • 10000 $26.34
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    20N120C3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    20n120c3d

    Abstract: HGTG20N120C3 LD26TM
    Text: 20N120C3D S E M I C O N D U C T O R 45A, 1200V, UFS Series N-Channel IGBT April 1998 Features Description • 45A, 1200V TC = 25oC The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original
    HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 1-800-4-HARRIS 20n120c3d HGTG20N120C3 LD26TM PDF

    HGTG20N120C3D

    Abstract: 20N120C3D 12V 200A Relay LD26
    Text: 20N120C3D Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    Original
    HGTG20N120C3D HGTG20N120C3D 150oC. 20N120C3D 12V 200A Relay LD26 PDF

    20N120C3D

    Abstract: No abstract text available
    Text: 20N120C3D Semiconductor October 1998 Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan
    HGTG20N120C3D HGTG20N120C3D 1-800-4-HARR 20N120C3D PDF

    20N120C3D

    Abstract: No abstract text available
    Text: 20N120C3D S em iconductor Data Sheet 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 20N120C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input


    OCR Scan
    HGTG20N120C3D HGTG20N120C3D 1-800-4-HARR 20N120C3D PDF