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    ORDERING AMERICAN TECHNICAL CERAMICS Search Results

    ORDERING AMERICAN TECHNICAL CERAMICS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ102MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    ORDERING AMERICAN TECHNICAL CERAMICS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    ATC100A100JW

    Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A

    ATC100A101JW

    Abstract: NE5531079A GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW
    Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology and


    Original     		PDF NE5531079A NE5531079A IR260 WS260 HS350-P3 PU10752EJ01V0DS ATC100A101JW GRM31CR72A105KA01B ATC100A240JW American Technical Ceramics ordering American Technical Ceramics NE5531079A-T1-A LDMOS NEC ATC100A270JW

    ATC100A101JW

    Abstract: ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531
    Text: SILICON POWER MOS FET NE5531079A 7.5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V radio systems. Die are manufactured using our NEWMOS-M1 technology


    Original     		PDF NE5531079A NE5531079A HS350-P3 WS260 IR260 PU10752EJ01V0DS ATC100A101JW ATC100A1R8BW ATC100A240JW GRM31CR72A105KA01 ATC100A270JW NE5531079A-T1-A ne5531

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1021L RFHA1021L 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021L is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high


    Original     		PDF RFHA1021L RFHA1021L DS131203

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    Untitled

    Abstract: No abstract text available
    Text: RFHA1043 150W GaN Power Amplifier 1.2GHz to 1.85GHz The RFHA1043 is optimized for applications in the 1.2GHz to 1.85GHz frequency band. Using an advanced 48V high power density gallium nitride GaN semiconductor process optimized for high peak to average ratio applications, these high performance


    Original     		PDF RFHA1043 85GHz RFHA1043 85GHz DS131023

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    irl 1520

    Abstract: rfha1043 IrL 1520 N
    Text: RFHA1043 RFHA1043 1.2GHz to 1.85GHz 150W GaN Power Amplifier 1.2GHz to 1.85GHz 150W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 150W  Advanced Heat-Sink Technology   RF IN VGQ


    Original     		PDF RFHA1043 85GHz RFHA1043 RF400-2 -30dBc DS121030 irl 1520 IrL 1520 N

    Thin Film Resistors SiCr

    Abstract: SiCr thin film TI SAC305 hfss 80Au-20Sn 3 to 10 GHz bandpass filter sac305 thermal conductivity 184394 ansoft SAC305 reflow bga
    Text: AT C / / A V X T H I N F I L M TECHNOLOGIES Engineered Thin Film Solutions TA B L E O F C O N T E N T S Introduction to ATC // AVX Thin Film Technologies .1 - 2


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL : ¡ ib J4E D • 0773MQR OOOtmq 1 ■ A T C / ^ ^ & 5 - d ‘7 «P M ID -K DIELECTRIC SERIES f"‘ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications ^ M I D - K r# § ^ DIELECTRIC 1 I CAP. VALUES FROM


    OCR Scan     		PDF 0773MQR 111XEA680-100- 111YEA680-100- 111XEA820-100- 111YEA820-100- 111XEA101-100-- 111YEA101-100- 111ZEA101-100-111YEA121-100- 111ZEA121-100111YEA151-100- 111ZEA151-100--

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL fi/ c a i 34E D 077340^ 0Q.Q07D3 fi * A T C A STABLE K DIELECTRIC SERIES K-14 STABLE K DIELECTRIC CAP. VALUES FROM .06 pF to 5.6 pF ATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size


    OCR Scan     		PDF Q07D3 typYA1R8-100- 111YA2R0-100- 111YA2R2-100- 111YA2R4-100- 111YA2R7-100- 111YA3R0-100- 111YA3R3-100- 111YA3R6-100- 111ZA2R2-100-

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN^TECHNICAL 34E D □77340^ GQQG721 T • ATC f i ¡cap MID-K DIELECTRIC SERIES Ç ATC Millimeter Wavelength 111 and 116 Series MID-K ■;* , p : DIELECTRIC -I ?CAP. VALUES FR O M ; 2.7 pF to 270 pF / Microcaps® for RF/Microwave Applications H¡“T &


    OCR Scan     		PDF GQQG721 111YEA 111ZEA101-100-111YEA 0111YEA 111ZE 111YEA181-1Q0- 111ZEA221

    atc111

    Abstract: 111SF220M100TT
    Text: AMERICAN TECHNICAL fila C m _34E. » ' ' " ' ‘ 077340=1 000072=! M • ATC/4-05-q£-0? - " "" " ' «P HIGH K DIELECTRIC SERIES 'âÂiièsooô'-vi.:'*;^ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications


    OCR Scan     		PDF ATC/4-05-q D773l atc111 111SF220M100TT

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL : ¡ ib J4E D • 0773MQR OOOtmq 1 ■ A T C / ^ ^ & 5 - d ‘7 «P MID-K DIELECTRIC SERIES ^ M ID - K r# § ^ f"‘ ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications DIELECTRIC 1 I CAP. VALUES FROM


    OCR Scan     		PDF 0773MQR ELECTRICA111UHC150-100- 111UHC180-100- 111XHC180-100- 111XHC220-100- 111XHC270-100-111XHC330-100- 111XHC390-100- 111YHC390-100- 111YHC470-100- 111YHC560-100-

    D773

    Abstract: No abstract text available
    Text: 34E D AMERICAN TECHNICAL flic« P □77340^ QQQQ717 â MID-K DIELECTRIC SERIES * K-200 * QATC Millimeter Wavelength 111 and 116 Series 1 M ID-K " D IELECTRIC CAP. VALUES FRO M : . 0.9 p F to 82 pF Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size


    OCR Scan     		PDF QQQQ717 K-200 to-100111UDB100-100- 111XDB100-100- 111XDB120-100- 111XDB150-100- 111XDB180-100- 111XDB220-100- 111YDB220-100- 111YDB270-100- D773

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL fi/s a p 3HE D • 0773H0q QQQQ7CH g M A TC BB S T A B L E K D IE L E C T R IC S E R IE S ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications K-31 STABLE K DIELECTRIC CAP. VALUES FROM 0.2 pF to 12 pF


    OCR Scan     		PDF 0773H0q ELECTR100- 111YBB5R6-100- 111ZBB5R6-100- 111YBB6R2-100- 111ZBB6R2-100- 111YBB6R8-100- 111ZBB6R8-100- 111ZBB7R5-100- 111ZBB8R2-100-

    MZ-270

    Abstract: 111YJ221
    Text: AMERICAN TECHNICAL 34E D 07 73 40 =^00007 25^7 • ATC> -fl5«65-o7, I [¡¡cap HIGH K DIELECTRIC SERIES «J í- -■í.'s'í i rÿ*?‘-ÿ'5-Í-iíálvAÍS:¿ i-ciïÿü* ATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications


    OCR Scan     		PDF 65-o7, tJ330-100- 111UJ390-100- 111UJ470-100- 111UJ560-100- 111UJ680-100- 111XJ680-100- 111XJ820-100- 111XJ101-100-111XJ121-100- 111XJ151-100- MZ-270 111YJ221

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL 34E » • GTTBMCH 0D0D7Q7 S ■ ATC4c&-d£-ô7 BA K-36 STABLE K DIELECTRIC CAP. VALUES FROM 0.2 pF to 15 pF ATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dim ensions approx. 10x actual size


    OCR Scan     		PDF MEASR1-100- 111YBA5R6-100- 111ZBA5R6-100- 111YBA6R2-100- 111ZBA6R2-100-111YBA6R8-100- 111ZBA6R8-100- 111YBA7R5-100- 111ZBA7R5-100- 111YBA8R2-100- 111ZBA8R2-100-

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN TECHNICAL 34E D 0 7 7 3 4 0 ^ 0 0 0 0 7 1 3 0 • ATC>|-05-Û5-07 — cc f i ¡cap STABLE K DIELECTRIC SERIES K-130 STABLE K DIELECTRIC CAP. VALUES FROM 0.6 pF to 56 pF jATC Millimeter Wavelength 111 and 116 Series Microcaps® for RF/Microwave Applications


    OCR Scan     		PDF K-130 11XCC100-100-111XCC120-100- 111XCC150-100- 111YCC150-100- 111YCC180-100- 111YCC220-100- 111ZCC220-100- 111YCC270-100- 111ZCC270-100- 111YCC330-100-

    111TCA

    Abstract: 111UCA2R
    Text: AMERICAN TECHNICAL 34E D • GTTBMCH 00DD711 7 ■ ATC / -ûS“ô^-C>7 CA K-62 STABLE K DIELECTRIC CAP. VALUES FROM 0.3 pF to 24 pF iATC Millimeter Wavelength 111 and 116 Series Microcaps for RF/Microwave Applications Nominal dimensions approx. 10x actual size)


    OCR Scan     		PDF 00DD711 FREQUENCY-100- 111XCA3R3-100111UCA3R6-100- 111XCA3R6-100111XCA3R9-100- 111XCA4R3-100- 111XCA5R1-100- 111XCA5R6-100- 111XCA6R2-100111XCA6R8-100- 111YCA6R8-100- 111XCA7R5-100- 111TCA 111UCA2R