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    NE5550979A Price and Stock

    California Eastern Laboratories (CEL) NE5550979A-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550979A-T1-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550979A-EV04-A

    EVAL BOARD NE5550979A
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    Mouser Electronics NE5550979A-EV04-A
    • 1 $143.41
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    Renesas Electronics Corporation NE5550979A-T1A-A

    NE5550979 - RF Power Field-Effect Transistor, N-Channel MOSFET, N-Channel MOSFET
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    Rochester Electronics NE5550979A-T1A-A 1,000 1
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    NE5550979A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE5550979A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG Original PDF
    NE5550979A-EV04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A Original PDF
    NE5550979A-EV09-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A Original PDF
    NE5550979A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG Original PDF

    NE5550979A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550979A optimized for the performance at 460MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550979A NE5550979A-EV04-A NE5550979A 460MHz. 200mA 28mil 460MHz 200mA

    atc100a2r4b

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV09-A is an evaluation circuit board for Renesas’ power LDMOS FET, NE5550979A optimized for the performance at 915MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550979A NE5550979A-EV09-A NE5550979A 915MHz. 200mA 28mil 915MHz 200mA

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404