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    M36W0R5040

    Abstract: m36w0r5040t M36W0R5040T5 M36W0R5040B5 8815h 8814h
    Text: M36W0R5040T5 M36W0R5040B5 32-Mbit 2 Mbits x16, multiple bank, burst flash memory and 16-Mbit (1 Mbit ×16) PSRAM, 1.8 V supply, MCP Features • ■ ■ ■ Multi-chip package – 1 die of 32-Mbit (2 Mbits x16, multiple bank, burst) flash memory – 1 die of 16 Mbit (1 Mbit x16) PSRAM


    Original     		M36W0R5040T5 M36W0R5040B5 32-Mbit 16-Mbit M36W0R5040T5: 8814h M36W0R5040B5: 8815h TFBGA88 M36W0R5040 m36w0r5040t M36W0R5040B5 8814h PDF

    m36w0r6050u

    Abstract: M36W0R M36W0R605 M58WR064HUL 221 ball MCP
    Text: M36W0R6050U0 M36W0R6050L0 64-Mbit mux I/O, multiple bank, burst flash memory 32-Mbit PSRAM, 1.8 V supply MCP Features • Multichip package – 1 die of 64 Mbit (4 Mb x16, mux I/O multiple bank, burst) flash memory – 1 die of 32 Mbit mux I/O, burst PSRAM


    Original     		M36W0R6050U0 M36W0R6050L0 64-Mbit 32-Mbit 88C0h 88C1h m36w0r6050u M36W0R M36W0R605 M58WR064HUL 221 ball MCP PDF

    M58WR064KT

    Abstract: M36W0R M36W0R604
    Text: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash


    Original     		M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 16-Mbit 32-Mbit M36W0R6050T3: 8810h M58WR064KT M36W0R M36W0R604 PDF

    M36W0R5040

    Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
    Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features „ Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits


    Original     		M36W0Rx0x0x7 64-Mbit 16-Mbit 32-Mbit M36W0R5030T7 M36W0R5040T7: 8814h M36W0R5030B7 M36W0R5040B7: 8815h M36W0R5040 M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT Numonyx MCP PDF

    m36w0r6050u

    Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
    Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory


    Original     		M36W0Rx0x0UL4 64-Mbit 32-Mbit M36W0R5040U4: 8828h M36W0R5040L4: 8829h M36W0R6040U4 M36W0R6050U4: 88C0h m36w0r6050u m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M69KM024A ADQ14 M69KM048A ADQ15 PDF

    emmc pin

    Abstract: emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH
    Text: NAND114AQA5M 1-Gbit, demux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		NAND114AQA5M LFBGA199 emmc pin emmc 5.0 samsung eMMC 5.0 221 ball eMMC memory emmc controller emmc jedec mechanical standard data retention samsung eMMC NUMONYX emmc eMMC slc mode NAND08GAH PDF

    emmc 5.0

    Abstract: numonyx oneNand flash NUMONYX emmc samsung eMMC 5.0 eMMC driver eMMC powerdown emmc samsung eMMC samsung emmc boot samsung mcp emmc
    Text: NAND225AQA5P 2-Gbit demux I/O OneNAND , 2-Gbyte NAND with MMC™ interface & 2x1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 2-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 2x1-Gbit (x32) DDR LPSDRAM


    Original     		NAND225AQA5P LFBGA199 emmc 5.0 numonyx oneNand flash NUMONYX emmc samsung eMMC 5.0 eMMC driver eMMC powerdown emmc samsung eMMC samsung emmc boot samsung mcp emmc PDF

    eMMC data retention

    Abstract: emmc jedec mechanical standard data retention samsung emmc boot emmc 5.0 numonyx oneNand flash Samsung EMMC "boot mode" samsung eMMC emmc Initialization eMMC samsung eMMC 5.0
    Text: NAND225AQA9P 2-Gbit demux I/O OneNAND , 2-Gbyte NAND with MMC™ interface & 2x1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • MCP (multichip package) – 2-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 2x1-Gbit (x32) DDR LPSDRAM


    Original     		NAND225AQA9P LFBGA199 eMMC data retention emmc jedec mechanical standard data retention samsung emmc boot emmc 5.0 numonyx oneNand flash Samsung EMMC "boot mode" samsung eMMC emmc Initialization eMMC samsung eMMC 5.0 PDF

    emmc pin

    Abstract: 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp
    Text: NAND114APA5M 1-Gbit, mux I/O OneNAND , 1-Gbyte NAND with MMC™ interface & 1-Gbit x32 DDR LPSDRAM MCP Preliminary Data Features • ■ ■ MCP (multichip package) – 1-Gbit (x16) high-density SLC large page OneNAND™ flash memory(a) – 1-Gbit (x32) DDR LPSDRAM


    Original     		NAND114APA5M LFBGA199 emmc pin 221 ball eMMC memory numonyx oneNand flash samsung emmc boot eMMC slc mode emmc 5.0 samsung eMMC 5.0 emmc boot operation emmc jedec Flash Memory SAMSUNG OneNAND mcp PDF

    M36L0R7050U3

    Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
    Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple


    Original     		M36L0Rx0x0UL3 256-Mbit 64-Mbit M36L0R7050U3/M36L0R7060U3: 882Eh M36L0R8050U3/M36L0R8060U3: 881Ch M36L0R7050L3/M36L0R7060L3: 882Fh M36L0R8050L3/M36L0R8060L3: M36L0R7050U3 M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB PDF

    RAS 0510

    Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


    Original     		256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 LFBGA137 RAS 0510 NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R PDF

    NAND98W3M0

    Abstract: NAND98R3M0 NAND99R NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


    Original     		256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 TFBGA152 NAND98W3M0 NAND98R3M0 NAND99R NAND98R PDF

    NANDA9R3N

    Abstract: NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM TFBGA137
    Text: NANDxxxxNx Large page NAND flash memory and low power SDRAM, 1.8/2.6 V MCP and PoP Features FBGA n MCP multichip package and PoP (package on package) – NAND flash memory – 1-, 2-, 4-, 2x2-Gbit large page size NAND flash memory – 256-, 512-, 2x512-, 128+256/512-Mbit or


    Original     		2x512-, 256/512-Mbit x16/x32) TFBGA107 TFBGA137 LFBGA137 TFBGA149 VFBGA160 VFBGA152 TFBGA152 NANDA9R3N NANDA9R TFBGA128 NANDA9R4N4 NANDA9R3N1 nanda8r3 M65KG512AM d2ed M65KD001AM PDF

    MX29GL256

    Abstract: 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D
    Text: Spansion NOR Flash Memory Competitive Cross Reference Guide December 2009 Parallel 1.8V Density Voltage Bus Mb (V) VIO (V) Type Bus Sector Width Type # Initial Access Burst Speed Banks Times (ns) (MHz) Packages Temp Range Recommended Pin Software Spansion OPN Compatible Compatible Notes


    Original     		AT49SV163D 48-Pin 48-Ball S29AS016J EN29SL800 S29AS00gest MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 28F00AM29EW M29DW127G 28F128P30 PF38F3040M0Y3D PDF

    Numonyx

    Abstract: NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144
    Text: NAND01GW3A2B-KGD NAND01GW4A2B-KGD Known Good Die, 1 Gbit x 8/x 16 , 528 Byte/264 word page, 3 V, NAND Flash memory Features • High density NAND Flash memory – 1 Gbit memory array – 32 Mbit spare area – Cost effective solutions for mass storage applications


    Original     		NAND01GW3A2B-KGD NAND01GW4A2B-KGD Byte/264 Numonyx NAND01GWxA2B-KGD NAND01GW3A2B-KGD NAND01GW4A2B-KGD AI07587 NAND01G AI13144 PDF

    FBGA63

    Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C byte/264 TSOP48 VFBGA55 VFBGA63 FBGA63 NAND512R4A2C NAND512W4A2C PDF

    NS4159

    Abstract: 528-byte
    Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • ● ■ High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage


    Original     		NAND128-A NAND256-A 128-Mbit 256-Mbit, 528-byte/264-word 256-Mbit 32-Mbit NS4159 528-byte PDF

    AI09

    Abstract: No abstract text available
    Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories Features • High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications


    Original     		NAND128-A NAND256-A 128-Mbit 256-Mbit, 528-byte/264-word 256-Mbit 32-Mbit AI09 PDF

    NAND01GW3B2C

    Abstract: NAND01GR3b2c nand01gw3b2cza6
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word nand01gw3b2cza6 PDF

    VFBGA153

    Abstract: NAND01G-B2C NAND01GW3B2C nand flash ONFI 3.0 NAND01GR3b2c ONFI 3.0 strataflash reliability NAND01G
    Text: NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features • NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities


    Original     		NAND01GR3B2C NAND01GW3B2C NAND01GR4B2C NAND01GW4B2C 2112-byte/1056-word VFBGA153 NAND01G-B2C nand flash ONFI 3.0 ONFI 3.0 strataflash reliability NAND01G PDF

    Untitled

    Abstract: No abstract text available
    Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface


    Original     		NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word 512-Mbit TSOP48 VFBGA55 VFBGA63 PDF

    C4858

    Abstract: No abstract text available
    Text: NAND128-A NAND256-A 128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, NAND flash memories Features • ● High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications


    Original     		NAND128-A NAND256-A 128-Mbit 256-Mbit, 528-byte/264-word 256-Mbit 32-Mbit C4858 PDF

    NAND02GW3B2C

    Abstract: VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B
    Text: NAND01G-B2B NAND02G-B2C 1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, SLC NAND flash memories Not For New Design Features • High density SLC NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications


    Original     		NAND01G-B2B NAND02G-B2C 2112-byte/1056-word TSOP48 NAND02GW3B2C VFBGA63 NAND01GW3B2B VFBGA-63 block code error management, verilog NAND01GR3B2B NAND01Gr4B2B NAND02GR4B2C Numonyx NAND01G-B2B PDF

    NAND02GW3B2D

    Abstract: ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand
    Text: NAND02G-B2D 2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Preliminary Data Features • High density NAND flash memory – Up to 2 Gbits of memory array – Cost-effective solution for mass storage applications


    Original     		NAND02G-B2D 2112-byte/1056-word TSOP48 NAND02GW3B2D ONFI 3.0 nand ONFI 3.0 VFBGA63 nand flash ONFI 3.0 NAND02GW3B2DN6 NAND02G-B2D NAND02GR3B2D NAND02GR4B2D ONFI nand PDF