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    M58WR064KT Price and Stock

    Micron Technology Inc M58WR064KT7AZB6E

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    DigiKey M58WR064KT7AZB6E Tray
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    Micron Technology Inc M58WR064KT70ZB6F TR

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    Micron Technology Inc M58WR064KT7AZB6F TR

    IC FLASH 64MBIT PARALLEL 56VFBGA
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    DigiKey M58WR064KT7AZB6F TR Reel
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    M58WR064KT Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M58WR064KT70ZB6F TR Micron Technology Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 56VFBGA Original PDF
    M58WR064KT70ZB6FTR Numonyx Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA Original PDF
    M58WR064KT7AZB6E Numonyx Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA Original PDF
    M58WR064KT7AZB6F TR Micron Technology Integrated Circuits (ICs) - Memory - IC FLASH 64M PARALLEL 56VFBGA Original PDF
    M58WR064KT7AZB6FTR Numonyx Memory, Integrated Circuits (ICs), IC FLASH 64MBIT 70NS 56VFBGA Original PDF

    M58WR064KT Datasheets Context Search

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    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit F8000-FFFFF

    M58WR032KT

    Abstract: M58WR032KB M58WR064KB M58WR016KT numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K M58WR016KB
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit M58WR064KB numonyx 106 ball 15H101 VFBGA56 M58WR064KT M58WR064K

    15H101

    Abstract: No abstract text available
    Text: M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 16-, 32-, 64-Mbit x16, multiple bank, burst 1.8 V supply Flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KT M58WR032KT M58WR064KT M58WR016KB M58WR032KB M58WR064KB 64-Mbit 15H101

    M58WR064KT

    Abstract: M36W0R M36W0R604
    Text: M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 4 Mbits x16, multiple bank, burst Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP Preliminary Data Features • Multichip package – 1 die of 64 Mbits (4 Mbits x16) flash


    Original     		PDF M36W0R6040T3 M36W0R6040B3 M36W0R6050T3 M36W0R6050B3 64-Mbit 16-Mbit 32-Mbit M36W0R6050T3: 8810h M58WR064KT M36W0R M36W0R604

    M36W0R5040

    Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
    Text: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features „ Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits


    Original     		PDF M36W0Rx0x0x7 64-Mbit 16-Mbit 32-Mbit M36W0R5030T7 M36W0R5040T7: 8814h M36W0R5030B7 M36W0R5040B7: 8815h M36W0R5040 M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT Numonyx MCP