M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
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STMicroelectronics NAND256W3A
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
STMicroelectronics NAND256W3A
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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M29DW640D
TSOP48
24Mbit
TFBGA63
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE
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M29DW640D
TSOP48
24Mbit
TFBGA63
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)
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M29DW640D
24Mbit
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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M29DW640D
TSOP48
24Mbit
TFBGA63
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M29DW323D
Abstract: M29DW323DB M29DW323DT
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW323DT
M29DW323DB
TSOP48
M29DW323D
M29DW323DB
M29DW323DT
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
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HY27UG082
Abstract: No abstract text available
Text: Preliminary HY27UG 08/16 2G2M Series HY27SG(08/16)2G2M Series 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Document Title 2Gbit (256Mx8bit / 128Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Nov. 19. 2004
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HY27UG
HY27SG
256Mx8bit
128Mx16bit)
table14)
HY27UG082
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VFBGA63
Abstract: NAND01GW3B NAND01GW4B NAND01G-B NAND01GR3B NAND01GR4B NAND02G-B FBGA63 NAND02GR3B2A st nand
Text: NAND01G-B NAND02G-B 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Feature summary ● ● ● ● ● ● ● High Density NAND Flash memories – Up to 2 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass
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NAND01G-B
NAND02G-B
Byte/1056
64Mbit
VFBGA63
TFBGA63
TSOP48
NAND01GW3B
NAND01GW4B
NAND01G-B
NAND01GR3B
NAND01GR4B
NAND02G-B
FBGA63
NAND02GR3B2A
st nand
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FBGA63
Abstract: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C VFBGA63
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● ● High density NAND Flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
byte/264
TSOP48
VFBGA55
VFBGA63
FBGA63
NAND512R4A2C
NAND512W4A2C
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FBGA63
Abstract: 29LW320 28F320 7286X amd Block Lock Bit Reset 2Mx16 8x32K Am29DL322
Text: Macronix International Co., Ltd. Taipei Office: 19F, No.4, Sec.3, Min Chuan East Road, Taipei, Taiwan, R.O.C. Tel: 886-2-25093300 Fax: 886-2-25092200 Subject: Shorten the engineer’s efforts for designing in MX29LW320T/B instead of Intel 28F320B3/C3 and AMD
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MX29LW320T/B
28F320B3/C3
Am29DL322/323/324
MX29LW320
Am29DL322DT/B
/2Mx16
4Mx8/2Mx16
2Mx16
7x32KW
FBGA63
29LW320
28F320
7286X
amd Block Lock Bit Reset
2Mx16
8x32K
Am29DL322
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Untitled
Abstract: No abstract text available
Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)
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M29DW640D
TSOP48
24Mbit
TFBGA63
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Untitled
Abstract: No abstract text available
Text: June 2008 HYB15T 2G 402C 2 F HYB15T 2G 802C 2 F 2 - G b i t D u a l D i e D o u b l e - D a t a - R a t e - T w o SD R A M DDR2 SDRAM EU RoHS Compliant Products Advance Internet Data Sheet Rev. 0.6 Advance Internet Data Sheet HYB15T2G[40/80]2C2F 2-Gbit Dual Die Double-Data-Rate-Two SDRAM
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HYB15T
HYB15T2G
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Untitled
Abstract: No abstract text available
Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW323DT
M29DW323DB
TSOP48
24Mbit
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Untitled
Abstract: No abstract text available
Text: M29W320DT M29W320DB 32 Mbit 4Mb x8 or 2Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ACCESS TIME: 70, 90ns
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M29W320DT
M29W320DB
TSOP48
TFBGA63
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USOP48
Abstract: VFBGA63 FBGA63 NAND08GW4B
Text: NAND512-B, NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND512-B,
NAND01G-B,
NAND02G-B,
NAND04G-B,
NAND08G-B
Byte/1056
64Mbit
USOP48
VFBGA63
FBGA63
NAND08GW4B
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NAND01G-A
Abstract: NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48 nand TSOP48 SE5055
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
nand TSOP48
SE5055
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FBGA 63
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
Chan48-lead
FBGA 63
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hynix nand flash otp
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
FBGA63
hynix nand flash otp
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Untitled
Abstract: No abstract text available
Text: NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, NAND flash memories Features ● ● High density NAND flash memories – 512-Mbit memory array – Cost effective solutions for mass storage applications NAND interface
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NAND512R3A2C
NAND512R4A2C
NAND512W3A2C
NAND512W4A2C
512-Mbit,
528-byte/264-word
512-Mbit
TSOP48
VFBGA55
VFBGA63
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NAND512B
Abstract: SD 1083 0.65mm pitch BGA NAND08G-B NAND04G-B FBGA63 SE 4.000 mhz 30pf TRANSISTOR z67 VFBGA63 NAND01G-B
Text: NAND512-B, NAND01G-B NAND02G-B NAND04G-B NAND08G-B 512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES
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NAND512-B,
NAND01G-B
NAND02G-B
NAND04G-B
NAND08G-B
Byte/1056
64Mbit
NAND512B
SD 1083
0.65mm pitch BGA
NAND08G-B
FBGA63
SE 4.000 mhz 30pf
TRANSISTOR z67
VFBGA63
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hynix 227e
Abstract: No abstract text available
Text: HY29LV320 32 Mbit 2M x 16 Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n – Read, program and erase operations from 2.7 to 3.6 volts – Ideal for battery-powered applications High Performance – 70, 80, 90 and 120 ns access time
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HY29LV320
128-word,
48ball
63ball
11x7mm2)
hynix 227e
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block code error management, verilog
Abstract: flash chip 8gb NAND08GW NAND01G-B NAND01GR3B NAND01GW3B NAND02G-B NAND04G-B NAND08G-B VFBGA63
Text: NAND01G-B, NAND02G-B, NAND04G-B, NAND08G-B 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory PRELIMINARY DATA FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array
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NAND01G-B,
NAND02G-B,
NAND04G-B,
NAND08G-B
Byte/1056
64Mbit
block code error management, verilog
flash chip 8gb
NAND08GW
NAND01G-B
NAND01GR3B
NAND01GW3B
NAND02G-B
NAND04G-B
NAND08G-B
VFBGA63
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