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    NUMONYX Search Results

    NUMONYX Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    251407-13 Numonyx Wireless Flash Memory (W18/W30 SCSP) Original PDF
    28F128L18 Numonyx StrataFlash Wireless Memory Original PDF
    28F128L30 Numonyx StrataFlash Wireless Memory Original PDF
    28F128W30 Numonyx Numonyx Wireless Flash Memory (W30) Original PDF
    28F256L18 Numonyx StrataFlash Wireless Memory Original PDF
    28F256L30 Numonyx StrataFlash Wireless Memory Original PDF
    28F320W30 Numonyx Numonyx Wireless Flash Memory (W30) Original PDF
    28F640W30 Numonyx Numonyx Wireless Flash Memory (W30) Original PDF
    28F800C3 Numonyx Advanced+ Boot Block Flash Original PDF
    290701-18 Numonyx Numonyx Wireless Flash Memory (W18) Original PDF
    290702-13 Numonyx Numonyx Wireless Flash Memory (W30) Original PDF
    306666-11 Numonyx Numonyx StrataFlash Embedded Memory Original PDF
    308551-05 Numonyx Numonyx Embedded Flash Memory Original PDF
    311760-10 Numonyx 128-Mbit W18 Family with Synchronous PSRAM Original PDF
    313272-06 Numonyx Numonyx Wireless Flash Memory (W18) with AD Multiplexed IO Original PDF
    313295-04 Numonyx Numonyx StrataFlash Wireless Memory Original PDF
    32WQ Numonyx Wireless Flash Memory (W18/W30 SCSP) Original PDF
    64WQ Numonyx Wireless Flash Memory (W18/W30 SCSP) Original PDF
    JS28F00AM29EWH0 Numonyx Memory, Integrated Circuits (ICs), IC FLASH 1GBIT 110NS 56TSOP Original PDF
    JS28F00AM29EWL0 Numonyx Memory, Integrated Circuits (ICs), IC FLASH 1GBIT 110NS 56TSOP Original PDF
    ...

    NUMONYX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PC28F256P33

    Abstract: JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74
    Text: NumonyxTM StrataFlash Embedded Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte PC28F256P33 JS28F256P33 PC48F pc28F256P33T PC28F256P33B PC28F256p33bf PC28F256P33TF DIODE 61 BP DIODE BP truth table NOT gate 74 PDF

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85 PDF

    NAND512W3A2S

    Abstract: nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2
    Text: Numonyx NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features – Hardware program/erase locked during power transitions  Density – 512 Mbit: 4096 blocks  Electronic signature – Manufacturer ID: x8 device: 20h


    Original     		Byte/264 x8/x16, NAND512W3A2S nand512r3a2s VFBGA63 NAND512W4A2S 70nM NUMonyx NAND NAND512W3A2 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    pc28f128p33b

    Abstract: PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 P33-65nm RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T
    Text: Numonyx AxcellTM P33-65nm Flash Memory 128-Mbit, 64-Mbit Single Bit per Cell SBC Datasheet Product Features „ „ „ High performance: — 60ns initial access time for Easy BGA — 70ns initial access time for TSOP — 25ns 8-word asynchronous-page read


    Original     		P33-65nm 128-Mbit, 64-Mbit 52MHz 256-word 32-KByte 128-KByte P33-65nm 40Mhz pc28f128p33b PC28F128P33 JS28F128P33BF js28f640p33 pc28f128p33bf60 RC28F128P33 JS28F128P33TF70 JS28F128P33 PC28F128P33T PDF

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512 PDF

    EN25Q80A

    Abstract: SO8w en25q80 M25P* Silicon Solution M25PE80 Dual Output fast
    Text: Eon Silicon Solution Inc. Application Note EON EN25Q80A vs Numonyx M25PE80 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc.


    Original     		EN25Q80A M25PE80 M25PE80 EN25Q80A 100ns SO8w en25q80 M25P* Silicon Solution Dual Output fast PDF

    M29W128G

    Abstract: M29W128GH M29W128GL
    Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29GL128H/L vs NUMONYX Flash M29W128G This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 Rev. A, Issue Date: 2009/ 06/16 2005 Eon Silicon Solution Inc. www.eonssi.com


    Original     		EN29GL128H/L M29W128G M29W128G EN29GL128H/L 500ns M29W128GH M29W128GL PDF

    EN29LV400A

    Abstract: M29W400DT
    Text: Eon Silicon Solution Inc. Application Note Eon Flash EN29LV400A vs NUMONYX Flash M29W400DT This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. www.eonssi.com


    Original     		EN29LV400A M29W400DT M29W400DT EN29LV400A EN29LV400A: M29W400DT: PDF

    EN25Q32

    Abstract: EN25Q32A VDFPN8 spi flash en25q32a NUMONYX M25P32 VFQFPN8 Numonyx software and application EN25 MLP8
    Text: Eon Silicon Solution Inc. Application Note EON EN25Q32A vs Numonyx M25P32 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 02/02


    Original     		EN25Q32A M25P32 M25P32 EN25Q32A 200mil 208mil) 100ns EN25Q32 VDFPN8 spi flash en25q32a NUMONYX VFQFPN8 Numonyx software and application EN25 MLP8 PDF

    PF38F4050L0ZTQ0

    Abstract: PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 768-Mbit LQ Family with Asynchronous PSRAM/SRAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Async PSRAM density: 16-, 32-, 64-Mbit — Async SRAM density: 8-Mbit


    Original     		L18/L30 768-Mbit 256-Mbit 64-Mbit 16-Mbit PF38F4050L0ZTQ0 PF38F3040 numonyx 106 ball RD38F4455 PF48F4400L0 RD38F40 PF38F4050 numonyx 107-ball Numonyx StrataFlash M18 PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features „ „ „ High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous


    Original     		M18-90nm/65nm) 512-Mbit 16-bit PDF

    RC28F256P33BF

    Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
    Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


    Original     		P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KBcument; RC28F256P33BF JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E PDF

    Stacked 4MB NOR FLASH & SRAM with AD multiplexed

    Abstract: FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball
    Text: Numonyx Wireless Flash Memory W18 with AD Multiplexed IO Datasheet Product Features „ „ „ High Performance Read-While-Write/Erase — Burst frequency at 66 MHz — 60 ns Initial Access Read Speed — 11 ns Burst-Mode Read Speed — 20 ns Page-Mode Read Speed


    Original     		x32SH x16SB x16/x32 Stacked 4MB NOR FLASH & SRAM with AD multiplexed FLASH MEMORY 38F FLASH MEMORY 48F Numonyx admux 48F4400 numonyx 106 ball PDF

    532WQ

    Abstract: PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230
    Text: Numonyx Wireless Flash Memory W18/W30 SCSP 32WQ and 64WQ Family with Asynchronous RAM Datasheet Product Features „ „ „ „ „ „ Device Architecture — Flash Density: 32-Mbit, 64-Mbit — Async PSRAM Density: 16-Mbit, 32-Mbit — Top, Bottom or Dual flash parameter


    Original     		W18/W30 32-Mbit, 64-Mbit 16-Mbit, 32-Mbit RD38F2240WWYDQ0 RD38F2240WWYDQ1 532WQ PF38F1030W0YTQ2 38F1030 PF38F1030 PF38F2030W0YTQ1 pf38f1030w0ybq2 Intel SCSP 32WQ 64WQ RD38F2230 PDF

    js28F128j3f75

    Abstract: JS28F128J3F-75 JS28F128J3F RC28F128J3F-75 JS28F640J3F-75 sbc 83 PC28F640 js28f640J3F JS28F128J3F7 JS28F320J3F-75
    Text: Numonyx Embedded Flash Memory J3 65 nm Single Bit per Cell (SBC) 32, 64, and 128 Mbit Datasheet Product Features „ „ „ „ Architecture — Symmetrical 128-KB blocks — 128 Mbit (128 blocks) — 64 Mbit (64 blocks) — 32 Mbit (32 blocks) — Blank Check to verify an erased block


    Original     		128-KB 256-Word 256Byte 56-Lead 64-Ball js28F128j3f75 JS28F128J3F-75 JS28F128J3F RC28F128J3F-75 JS28F640J3F-75 sbc 83 PC28F640 js28f640J3F JS28F128J3F7 JS28F320J3F-75 PDF

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Forté Serial Flash Memory M25P80 8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface • 75 MHz Clock rate maximum • 2.7 V to 3.6 V single supply voltage • 8 Mbit of Flash memory


    Original     		M25P80 2014h) PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original     		M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF PDF

    TSOP 48 pin flash gbit

    Abstract: JS28F00AP33BF 1FFC000
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s TSOP 48 pin flash gbit JS28F00AP33BF 1FFC000 PDF

    M25P16 VDFPN8

    Abstract: vdfpn8 M25P16 application note 16-pins 300mil SO16 EN25Q16 M25P16 NUMONYX SO8w VDFN VDFN-8
    Text: Eon Silicon Solution Inc. Application Note EON EN25Q16 vs Numonyx M25P16 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/02/25


    Original     		EN25Q16 M25P16 M25P16 EN25Q16 100ns M25P16 VDFPN8 vdfpn8 M25P16 application note 16-pins 300mil SO16 NUMONYX SO8w VDFN VDFN-8 PDF

    EN25Q40

    Abstract: numonyx m25p40 VFQFPN8 Numonyx software and application Numonyx Application Note mlp8 M25P40 MLP8 Dual Output SPI numonyx M25P* Silicon Solution
    Text: Eon Silicon Solution Inc. Application Note EON EN25Q40 vs Numonyx M25P40 Specification Comparison This Application Note may be revised by subsequent versions or modifications due to changes in technical specifications. 1 2005 Eon Silicon Solution Inc. Rev. A, Issue Date: 2010/ 02/02


    Original     		EN25Q40 M25P40 M25P40 EN25Q40 150mil 150mil) 100ns numonyx m25p40 VFQFPN8 Numonyx software and application Numonyx Application Note mlp8 MLP8 Dual Output SPI numonyx M25P* Silicon Solution PDF