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    Murata Manufacturing Co Ltd GRM188C1H330JA01D

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    Bristol Electronics GRM188C1H330JA01D 2,234
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    88C1H Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K

    CR10

    Abstract: CR14 M58WR064HL M58WR064HU VFBGA44
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)


    Original     		PDF M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44

    CR14

    Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU M58WR064KU VFBGA44 MS-328
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit CR14 M58WR032KU VFBGA44 MS-328

    M58WR064K

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KU70ZA6U M58WR064K

    m36w0r6050u

    Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
    Text: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory


    Original     		PDF M36W0Rx0x0UL4 64-Mbit 32-Mbit M36W0R5040U4: 8828h M36W0R5040L4: 8829h M36W0R6040U4 M36W0R6050U4: 88C0h m36w0r6050u m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M69KM024A ADQ14 M69KM048A ADQ15

    M58WR064HUL

    Abstract: 04MAY2006
    Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary „ Supply voltage –VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O Buffers – VPP = 12 V for fast Program (9 V tolerant)


    Original     		PDF M58WR064HU M58WR064HL M58WR064HUL 04MAY2006

    Untitled

    Abstract: No abstract text available
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features „ Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit

    m36w0r6050u

    Abstract: M36W0R M36W0R605 M58WR064HUL 221 ball MCP
    Text: M36W0R6050U0 M36W0R6050L0 64-Mbit mux I/O, multiple bank, burst flash memory 32-Mbit PSRAM, 1.8 V supply MCP Features • Multichip package – 1 die of 64 Mbit (4 Mb x16, mux I/O multiple bank, burst) flash memory – 1 die of 32 Mbit mux I/O, burst PSRAM


    Original     		PDF M36W0R6050U0 M36W0R6050L0 64-Mbit 32-Mbit 88C0h 88C1h m36w0r6050u M36W0R M36W0R605 M58WR064HUL 221 ball MCP

    M58WR064KU

    Abstract: 88C0 CR14 M58WR016KL M58WR016KU M58WR032KL M58WR032KU VFBGA44 M58WR064KL
    Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers


    Original     		PDF M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit 88C0 CR14 M58WR032KU VFBGA44 M58WR064KL

    S3 Vision864

    Abstract: S3 vision868 vision968 s3 tech PD-60 vision864 Vision9 928PCI 3c3h CR683
    Text: Vision864 Graphics Accelerator S 3 In c o rp o ra te d Vision864 Graphics Accelerator October 1994 S3 Incorporated 2770 San Tomas Expressway îanta Clara, CA 95051-0968 d f t _ T005[m 00 00731 b40 Vision864 Graphics Accelerator S 3 In c o rp o ra te d


    OCR Scan     		PDF Vision864 208-pin S3 Vision864 S3 vision868 vision968 s3 tech PD-60 Vision9 928PCI 3c3h CR683