VCO 5GHz
Abstract: AN0017 ic vco
Text: AI0910 May 2009 Advanced Information QFN packaged 7.5GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful
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AI0910
AN0019
AN0020
CHV2061-98F
CHV2061-QGG
AI09109139
VCO 5GHz
AN0017
ic vco
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PDF
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SMD ic catalogue
Abstract: AN0017 QFN-5x5
Text: AI0912 May 2009 Advanced Information QFN packaged 8.4GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful
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AI0912
AN0019
AN0020
CHV2063-98F
CHV2063-QGG
AI09129139
SMD ic catalogue
AN0017
QFN-5x5
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PDF
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AN0017
Abstract: ODU microwave
Text: AI0911 May 2009 Advanced Information QFN packaged 8.0GHz Integrated VCO GaAs Monolithic Microwave IC VCO’s represents a key component for the Telecommunication ODU system. UMS decided to address this very specific function, based on our strong and successful
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AI0911
AN0019
AN0020
CHV2062-98F
CHV2062-QGG
AI09119139
AN0017
ODU microwave
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PDF
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Untitled
Abstract: No abstract text available
Text: M41T81S Serial access real-time clock RTC with alarms Datasheet − production data Features • ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century 32 KHz crystal oscillator with integrated load capacitance (12.5 pf) which provides
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M41T81S
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JESD22-A114A
Abstract: M34F04
Text: M34F04 4Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Half of Memory PRELIMINARY DATA FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ 2.5 to 5.5V Single Supply Voltage: ■ Hardware Write Control of the top half of
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M34F04
JESD22-A114A
M34F04
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STM706P
Abstract: STM706R
Text: STM706T/S/R, STM706P, STM708T/S/R 3 V supervisor Features • Precision VCC monitor – STM706/708 T: 3.00 V ≤ VRST ≤ 3.15 V S: 2.88 V ≤ VRST ≤ 3.00 V R: STM706P: 2.59 V ≤ VRST ≤ 2.70 V RST and RST outputs ■ 200 ms typ trec ■ Watchdog timer - 1.6 s (typ)
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STM706T/S/R,
STM706P,
STM708T/S/R
STM706/708
STM706P:
STM706T/S/R
STM706P
STM706P
STM706R
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PDF
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LT1187
Abstract: LT1187C LT1187CN8 LT1187M LT1189 LT1193
Text: LT1187 Low Power Video Difference Amplifier FEATURES DESCRIPTION • The LT 1187 is a difference amplifier optimized for operation on ±5V, or a single 5V supply and gain ≥2. This versatile amplifier features uncommitted high input impedance + and (–) inputs, and can be used in differential
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LT1187
50MHz
10MHz:
LT1193
LT1189
LT1193
LT1194
LT1206
250mA
LT1187
LT1187C
LT1187CN8
LT1187M
LT1189
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PDF
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LT1091
Abstract: 8255 interface with 8051 MC68HC05 Applications Guide LTC1091 LTC1091ACN8 LTC1091CN8 8051 Interfacing with the 8255 interfacing 8255 to external memory in 8051 with 8255 peripheral interface 8051 "YSI 700" thermistor
Text: LTC1091/LTC1092 LTC1093/LTC1094 1-, 2-, 6- and 8-Channel, 10-Bit Serial I/O Data Acquisition Systems FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Programmable Features – Unipolar/Bipolar Conversions – Differential/Single-Ended Multiplexer Configurations
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LTC1091/LTC1092
LTC1093/LTC1094
10-Bit
LTC1091:
LTC1092/LTC1093/LTC1094:
1091/LTC1092/LTC1093/LTC1094
10-bit
2N3904
MC68HC05
LT1091-4
LT1091
8255 interface with 8051
MC68HC05 Applications Guide
LTC1091
LTC1091ACN8
LTC1091CN8
8051 Interfacing with the 8255
interfacing 8255 to external memory in 8051 with
8255 peripheral interface 8051
"YSI 700" thermistor
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radix-8 FFT
Abstract: yswa BR17 CI23 radix DSP24 24PORTB DR17 64 point radix 4 FFT dsp24s
Text: DSP Architectures Transform Your World DSP24 TM High Performance Scalable DSP Chip DSP Architectures Data Sheet Real 24 PORT A Imag 24 DSP24 Imag 24 24 24 X I NP U TB US Y INPUT BU S OUTPU TB US 24 48 Imag 24 Scheduler/ Controller X Y Memory A 24 Memory B
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DSP24
432-lead
DSP24-Y-100-C
DSPA-DSP24DS
radix-8 FFT
yswa
BR17
CI23
radix
DSP24
24PORTB
DR17
64 point radix 4 FFT
dsp24s
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PDF
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STMicroelectronics NAND256W3A
Abstract: NAND01G-A NAND128-A NAND256-A NAND512-A VFBGA63 WSOP48
Text: NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit x8/x16 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array
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NAND128-A,
NAND256-A
NAND512-A,
NAND01G-A
x8/x16)
Byte/264
STMicroelectronics NAND256W3A
NAND01G-A
NAND128-A
NAND256-A
NAND512-A
VFBGA63
WSOP48
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M69KB128AA
Abstract: BCR10
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
M69KB128AA
BCR10
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sn1204
Abstract: L1204 1204 video rgb splitter amplifier schematic 1204 transistor HP4195A LT1204 LT1204CN LT1204CS LT1204CSW
Text: LT1204 4-Input Video Multiplexer with 75MHz Current Feedback Amplifier DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 0.1dB Gain Flatness > 30MHz Channel Separation at 10MHz: 90dB 40mV Switching Transient, Input Referred – 3dB Bandwidth, AV = 2, RL = 150Ω: 75MHz
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LT1204
75MHz
30MHz
10MHz:
75MHz
120ns
LT12204
LT1193
LT1227
680pF
sn1204
L1204
1204
video rgb splitter amplifier schematic
1204 transistor
HP4195A
LT1204
LT1204CN
LT1204CS
LT1204CSW
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BCR10
Abstract: M69KM096AA
Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus
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M69KM096AA
83MHz
32-Word)
83MHz
BCR10
M69KM096AA
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Untitled
Abstract: No abstract text available
Text: PSD8XXFX Flash in-system programmable ISP peripherals for 8-bit MCUs, 5 V Features • Flash in-system programmable (ISP) peripheral for 8-bit MCUs ■ Dual bank Flash memories – Up to 2 Mbit of primary Flash memory (8 uniform sectors, 32K x8) – Up to 256 Kbit secondary Flash memory (4
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Untitled
Abstract: No abstract text available
Text: M69KB128AA 128 Mbit 8Mb x16 1.8V Supply, Burst PSRAM PRELIMINARY DATA Features summary • SUPPLY VOLTAGE – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ USER-SELECTABLE OPERATING MODES – Asynchronous Modes: Random Read, and
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M69KB128AA
104MHz
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Untitled
Abstract: No abstract text available
Text: SRI512 13.56-MHz short-range Contactless memory chip with 512-bit EEPROM and Anti-Collision functions Preliminary Data Feature summary • ISO 14443 - 2 Type B Air Interface Compliant ■ ISO 14443 - 3 Type B Frame Format Compliant ■ 13.56MHz Carrier Frequency
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SRI512
56-MHz
512-bit
56MHz
847kHz
64-bit
40-Year
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FB300
Abstract: M50FW080 PLCC32 TSOP32
Text: M50FW080 8 Mbit 1M x8, Uniform Block 3V Supply Firmware Hub Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)
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M50FW080
FB300
M50FW080
PLCC32
TSOP32
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JESD97
Abstract: M29DW128F TSOP56 6C80
Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read
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M29DW128F
TSOP56
32-Word
16Mbit
48Mbit
16Mbit
TBGA64
JESD97
M29DW128F
TSOP56
6C80
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CR10
Abstract: M58LR128HB M58LR128HT VFBGA56
Text: M58LR128HT M58LR128HB 128 Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program
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M58LR128HT
M58LR128HB
VFBGA56
CR10
M58LR128HB
M58LR128HT
VFBGA56
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NAND02GW3B2C
Abstract: VFBGA63 ST 2gbit NAND NAND02GR4B2C NAND01G-B2B NAND01GW3B2B NAND01Gr4B2B NAND01GR3B2B NAND02G-B2C NAND01G
Text: NAND01G-B2B NAND02G-B2C 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory Features • ■ High Density NAND Flash memories – Up to 2 Gbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width
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NAND01G-B2B
NAND02G-B2C
Byte/1056
TSOP48
VFBGA63
NAND02GW3B2C
ST 2gbit NAND
NAND02GR4B2C
NAND01G-B2B
NAND01GW3B2B
NAND01Gr4B2B
NAND01GR3B2B
NAND02G-B2C
NAND01G
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M34E02
Abstract: MLP8 2x3mm
Text: M34E02 2 Kbit Serial I²C Bus EEPROM with permanent and reversible, software Write protection Feature summary • Permanent and Reversible Software Data Protection for Lower 128 Bytes ■ Two Wire I²C Serial Interface ■ 400kHz Transfer Rate ■ Very Low Voltage Operation:
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M34E02
400kHz
M34E02
MLP8 2x3mm
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ISO10373-6
Abstract: SRT512 ISO14443-2 MI b11 transistor A4t 46 diode a4t transistor A4t ISO14443 ISO14443-3 7816-6 AM1
Text: SRT512 13.56 MHz short-range Contactless memory chip with 512-bit EEPROM and anticollision functions Features • ISO 14443-2 Type B Air Interface compliant ■ ISO 14443-3 Type B Frame Format compliant ■ 13.56 MHz carrier frequency ■ 847 kHz subcarrier frequency
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SRT512
512-bit
64-bit
40-year
ISO10373-6
SRT512
ISO14443-2
MI b11
transistor A4t 46
diode a4t
transistor A4t
ISO14443
ISO14443-3
7816-6 AM1
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JESD97
Abstract: M29W008EB M29W008ET M29W00EB
Text: M29W008ET M29W008EB 8 Mbit 1Mb x 8, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ACCESS TIMES: 70ns, 90ns ■ PROGRAMMING TIME: 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.) – Embedded Byte Program Algorithm – Status Register bits and Ready/Busy
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M29W008ET
M29W008EB
JESD97
M29W008EB
M29W008ET
M29W00EB
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M50FLW080
Abstract: M50FLW080A M50FLW080B PLCC32 TSOP32
Text: M50FLW080A M50FLW080B 8 Mbit 13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors 3V Supply Firmware Hub / Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ FLASH MEMORY – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1)
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M50FLW080A
M50FLW080B
64KByte
33MHz
M50FLW080A)
M50FLW080B)
M50FLW080
M50FLW080A
M50FLW080B
PLCC32
TSOP32
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