VFBGA44
Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
32-Mbit
VFBGA44
M58WR016KL
M58WR032KL
ADQ12
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BCR10
Abstract: M69KM096AA
Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus
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M69KM096AA
83MHz
32-Word)
83MHz
BCR10
M69KM096AA
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFXXX16Q2A
80x11
KFG1G16Q2A)
KFN2G16Q2A)
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10072h
Abstract: structure chart of samsung company
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
KFM1216Q2M
48FBGA
512Mb
10072h
structure chart of samsung company
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216-ball
Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32
Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die
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MT42L128M16D1,
MT42L64M32D1,
MT42L64M64D2,
MT42L128M32D2,
MT42L256M32D4,
MT42L128M64D4
MT42L96M64D3,
MT42L192M32D3
09005aef83f3f2eb
216-ball
Dual LPDDR2
LPDDR2 SDRAM micron
LPDDR2 1Gb Memory
MR63
Micron LPDDR2
lpddr2 168
lp-ddr2
MT42L256M32
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
80x11
KFM2G16Q2M)
KFN4G16Q2M)
4GB MLC NAND
SAMSUNG NAND Flash MLC
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M59MR032C
Abstract: M59MR032D w849 ADQ14
Text: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ
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M59MR032C
M59MR032D
100ns
LFBGA54
BGA46
M59MR032C
M59MR032D
w849
ADQ14
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Untitled
Abstract: No abstract text available
Text: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71NS-J
S71NS-J
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S72NS512RE0
Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128
Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)
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S72NS-R
S72NS512RE0
DDQ15
S72NS512RD0
spansion marking date code
S29NS-R
S72NS128
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IS66WVD2M16DALL
Abstract: CellularRAM 66WVD2M16DALL
Text: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD2M16DALL
IS66WVD2M16DALL
32Mbit
-40oC
2Mx16
IS66WVD2M16DALL-7013BLI
IS66WVD2M16DALL-7010BLI
IS66WVD2M16DALL-7008BLI
54-ball
CellularRAM
66WVD2M16DALL
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Untitled
Abstract: No abstract text available
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
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88CAh
Abstract: No abstract text available
Text: M58CR064C M58CR064D 64 Mbit 4Mb x16, Dual Bank, Burst 1.8V Supply Flash Memory PRODUCT PREVIEW • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) SYNCHRONOUS / ASYNCHRONOUS READ FBGA
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M58CR064C
M58CR064D
54MHz
100ns
TFBGA56
A0-A21
88CAh
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Untitled
Abstract: No abstract text available
Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■
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M58MR032C
M58MR032D
40MHz
100ns
TFBGA48
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st MCP
Abstract: No abstract text available
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
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M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
st MCP
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bcr10
Abstract: No abstract text available
Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus
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M69KM096AA
83MHz
32-Word)
83MHz
bcr10
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S71NS512r
Abstract: A22-A16 PSRAM S71NS512RD0 JEP95 S71NS-R S71NS256RD0 pSRAM_39
Text: S71NS-R Memory Subsystem Solutions MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory and Burst Mode pSRAM 512 Mb 32 Mb x 16-bit / 256 Mb (16 Mb x 16-bit) Flash, 128 Mb (8 Mb x 16-bit) / 128Mb (4 Mb x 16-bit) pSRAM S71NS-R Memory Subsystem Solutions Cover Sheet
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S71NS-R
16-bit)
128Mb
S71NS512r
A22-A16
PSRAM
S71NS512RD0
JEP95
S71NS256RD0
pSRAM_39
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Untitled
Abstract: No abstract text available
Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2
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S72WS-N
16-bit
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Abstract: No abstract text available
Text: S71NS-N MCP Products MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 256 Mb 16 Mb x 16-bit , 128 Mb (8 Mb x 16-bit) and 64 Mb (4 Mb x 16-bit) with Multiplexed pSRAM 64 Mb (4 Mb x 16-bit), 32 Mb (2 Mb x 16-bit), 16 Mb (1 Mb x 16-bit) and 8Mb (512Kb x 16-bit)
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S71NS-N
16-bit)
512Kb
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Untitled
Abstract: No abstract text available
Text: S71NS-J Stacked Multi-Chip Product MCP 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Multiplexed Flash Memory with pSRAM S71NS-J Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71NS-J
S71NS-J
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EN29NS128
Abstract: E29NS128 PSEUDO SRAM EN71NS PSRAM
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
EN29NS128
E29NS128
PSEUDO SRAM
PSRAM
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M58WR064K
Abstract: No abstract text available
Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers
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M58WR016KU
M58WR016KL
M58WR032KU
M58WR032KL
M58WR064KU
M58WR064KL
64-Mbit
M58WR064K
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