st MCP
Abstract: No abstract text available
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
|
Original
|
M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
st MCP
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
|
Original
|
M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
|
PDF
|
M36L0R7050
Abstract: M36L0R7050L1 M36L0R7050U1 M36L0R7060L1 M36L0R7060U1 M69KM048AA M69KM096AA 64Mb-pSRAM ADQ14
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
|
Original
|
M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
M36L0R7050
M36L0R7050L1
M36L0R7060L1
M69KM048AA
M69KM096AA
64Mb-pSRAM
ADQ14
|
PDF
|
Untitled
Abstract: No abstract text available
Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O
|
Original
|
M36L0R7060U1
M36L0R7060L1
M36L0R7050U1
M36L0R7050L1
64Mbit
M36L0R7060U1:
882Eh,
M36L0R7050U1:
882Eh
M36L0R7060L1:
|
PDF
|
M58LR128HC
Abstract: M58LR128HD VFBGA44 CR10 882F
Text: M58LR128HC M58LR128HD 128 Mbit x16, Mux I/O, Multiple Bank, Multilevel interface, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O Buffers – VPP = 9 V for fast program
|
Original
|
M58LR128HC
M58LR128HD
VFBGA44
M58LR128HC
M58LR128HD
VFBGA44
CR10
882F
|
PDF
|
M36L0R7050U3
Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Text: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple
|
Original
|
M36L0Rx0x0UL3
256-Mbit
64-Mbit
M36L0R7050U3/M36L0R7060U3:
882Eh
M36L0R8050U3/M36L0R8060U3:
881Ch
M36L0R7050L3/M36L0R7060L3:
882Fh
M36L0R8050L3/M36L0R8060L3:
M36L0R7050U3
M69KM024A
M36L0R7050UL3
ADQ14
M36L0R8060L3
Numonyx MCP
M69KM048AB
|
PDF
|
M58LRxxxKC
Abstract: No abstract text available
Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
|
Original
|
M58LR128KC
M58LR128KD
M58LR256KC
M58LR256KD
256-Mbit
M58LR128KC/D
16-Mbit
M58LR256KC/D
M58LRxxxKC
|
PDF
|
882F
Abstract: L70110
Text: M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit x16, Mux I/O, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
|
Original
|
M58LR256GU,
M58LR256GL
M58LR128GU,
M58LR128GL
256Mbit
66MHz
M58LR128GU/L)
M58LR256GU/L)
882F
L70110
|
PDF
|
M58LR256K
Abstract: No abstract text available
Text: M58LR128KC M58LR128KD M58LR256KC M58LR256KD 128- or 256-Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
|
Original
|
M58LR128KC
M58LR128KD
M58LR256KC
M58LR256KD
256-Mbit
M58LR128KC/D
16-Mbit
M58LR256KC/D
M58LR256K
|
PDF
|
CR10
Abstract: M58LR128KC M58LR128KD M58LR256KC M58LR256KD M58LRxxxKC
Text: M58LR128KC, M58LR128KD M58LR256KC, M58LR256KD 128 or 256 Mbit x16, mux I/O, multiple bank, multilevel interface, burst 1.8 V supply Flash memories Target Specification Features • Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers
|
Original
|
M58LR128KC,
M58LR128KD
M58LR256KC,
M58LR256KD
M58LR128KC/D
M58LR256KC/D
CR10
M58LR128KC
M58LR128KD
M58LR256KC
M58LR256KD
M58LRxxxKC
|
PDF
|
M58LR128GL
Abstract: M58LR128GU M58LR256GL M58LR256GU VFBGA44 882F
Text: M58LR256GU, M58LR256GL M58LR128GU, M58LR128GL 128 and 256Mbit x16, Mux I/O, Multiple Bank, Multi-Level, Burst 1.8V supply Flash memories Feature summary • Supply voltage – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
|
Original
|
M58LR256GU,
M58LR256GL
M58LR128GU,
M58LR128GL
256Mbit
66MHz
M58LR128GU/L)
M58LR256GU/L)
M58LR128GL
M58LR128GU
M58LR256GL
M58LR256GU
VFBGA44
882F
|
PDF
|