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    MUR870 Search Results

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    MUR870 Price and Stock

    Rochester Electronics LLC MUR870E

    DIODE GEN PURP 700V 8A TO220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MUR870E Bulk 468
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.64
    • 10000 $0.64
    		Buy Now

    Harris Semiconductor MUR870

    RECTIFIER DIODE,700V V(RRM),TO-220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MUR870 53
    • 1 $0.4
    • 10 $0.4
    • 100 $0.4
    • 1000 $0.4
    • 10000 $0.4
    		Buy Now

    Motorola Semiconductor Products MUR870E

    RECTIFIER DIODE,700V V(RRM),TO-220AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MUR870E 30
    • 1 $3.12
    • 10 $2.08
    • 100 $1.56
    • 1000 $1.56
    • 10000 $1.56
    		Buy Now

    Harris Semiconductor MUR870E

    Rectifier Diode, Avalanche, 8A, 700V '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics MUR870E 1,283 1
    • 1 $0.6176
    • 10 $0.6176
    • 100 $0.5805
    • 1000 $0.525
    • 10000 $0.525
    		Buy Now

    MUR870 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MUR870 Motorola European Master Selection Guide 1986 Scan PDF
    MUR870 Motorola 8.0A Iout, 700V Vrrm Fast Recovery Rectifier Scan PDF
    MUR870E Harris Semiconductor 8A, 700V - 1000V Ultrafast Diodes Original PDF
    MUR870E Harris Semiconductor Ultrafast Recovery Rectifier Original PDF
    MUR870E Motorola Switchmode Datasheet Scan PDF
    MUR870E Motorola Switchmode Power Rectifiers Scan PDF
    MUR870E Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    MUR870 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mur 4060

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS MUR870E-MUR8100E 8A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating MUR Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current Rated VR 870 880 890 8100 700


    Original     		MUR870E-MUR8100E MIL-PRF-19500, mur 4060 PDF

    RURP880

    Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
    Text: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature


    Original     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 O-220AC RURP880 MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870 PDF

    BYW19-1000

    Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200
    Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820


    Original     		FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    RURU10060

    Abstract: MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010
    Text: 150A RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 2.1V 110ns 2.1V 130ns 2.1V 150ns 2.1V 150ns 2.1 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 2.1V 200ns 1200V S E M I C O N D U C TO R NOTE: VF at IF AVG , TJ = 25oC; trr at IF(AVG), dIF/dt = 100A/µs or 200A/µs, TJ = 25oC; † trr at IF = 1A.


    Original     		RURP8120 RURP15120 RURP30120 RURG30120 RURG50120 RURG75120 RURU50120 RURU75120 RURU100120 RURU150120 RURU10060 MUR1560 MUR850 MUR850 diode MUR880E MUR1510 MUR1515 MUR810 MUR815 RURG3010 PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    MTP12N10 pin configuration

    Abstract: IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET
    Text: MOTOROLA Order this document by MJ16110/D SEMICONDUCTOR TECHNICAL DATA Designer's MJ16110* MJW16110 *  Data Sheet NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters.


    Original     		MJ16110/D MJ16110* MJW16110 MJ16110/D* MTP12N10 pin configuration IRFD9123 MJ16110 IRFD113 equivalent MTP25N06 pk98 MJW16110 MTP12N10 mur47 MJ16010 DATASHEET PDF

    MJ802 EQUIVALENT

    Abstract: 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ16110* MJW16110*  Data Sheet Designer's NPN Silicon Power Transistors *Motorola Preferred Device SWITCHMODE Bridge Series . . . specifically designed for use in half bridge and full bridge off line converters. •


    Original     		MJ16110* MJW16110* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C MJ802 EQUIVALENT 2N3055 equivalent transistor NUMBER MJ4502 EQUIVALENT bd131 equivalent bd139 equivalent ST T8 3580 MJ15025* equivalent MJ3055 equivalent BDX37 equivalent mje340 equivalent PDF

    MUR1520 equivalent

    Abstract: MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S
    Text: 75A/80A 100A 150A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR850 RURP1550 RURP850 60ns 1.5V 60ns 1.5V 60ns 1.6V 75ns 1.6V 85ns 1.6V 75ns 1.6V 85ns 1.6V 100ns 1.6V 100ns 60ns 1.5V 60ns† 1.5V MUR8100E RURP15100 RURP30100 RURG30100 RURG50100 RURG80100 RURU50100 RURU80100 RURU100100 RURU150100


    Original     		5A/80A MUR1550 RURP3050 RURG3050 RURG5050 RURG8050 RURU5050 RURU8050 RURU10050 RURU15050 MUR1520 equivalent MUR850 BYW51150 MUR1550 MUR880 MUR1510 MUR810 RURD410 RURD610 RURD610S PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    UR880

    Abstract: RURP880 890E 870e 880e
    Text: MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 HARRIS S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Diodes A p ril 1 9 9 5 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 75ns JE D E C TO -220A C ANODE


    OCR Scan     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 -220A UR880 RURP880 890E 870e 880e PDF

    MUR850

    Abstract: MUR830 MUR880 MUR890 MUR850 diode MUR805 MUR810 MUR815 MUR820 MUR860
    Text: M O T O R O L A SC -CDIODES/OPTOJ IS E D I b 3 b ? a s s □ Q 7 ci7Li7 3 | _ T-Û3-17 MUR805 MUR810 MUR815 MUR820 MUR830 MUR840 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SWITCHMODE POWER RECTIFIERS MUR850 MUR860 MUR870 MUR880 MUR890 MUR8100 ULTRAFAST


    OCR Scan     		T-03-17 MUR805 MUR850 MUR810 MUR860 MUR815 MUR870 MUR820 MUR880 MUR830 MUR850 MUR880 MUR890 MUR850 diode MUR860 PDF

    RURP880

    Abstract: No abstract text available
    Text: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature


    OCR Scan     		MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 O-220AC RURP880 PDF

    Diode MUR880E

    Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
    Text: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic


    OCR Scan     		MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 43Q2271 0G42377 RUR890, RUR8100 Diode MUR880E RUR880 RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A PDF

    transistor 700v

    Abstract: RURP880 MUR890E transistor 800V 1A RUR880
    Text: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature


    OCR Scan     		MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 O-220AC transistor 700v transistor 800V 1A RUR880 PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 PDF

    igbt 1000v 80a

    Abstract: 30A, 600v DIODE
    Text: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,


    OCR Scan     		MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 MUR840, MUR850, MUR860, RURP840, igbt 1000v 80a 30A, 600v DIODE PDF

    MUR850

    Abstract: motorola mur850 MUR830 MUR805 MUR810 MUR815 MUR820 MUR840 MUR860 T0810
    Text: MOTOROLA SC DIODES/OPTO b4E D • fc.3 b 7 2 S 5 Q 0 fib4 7 7 MUR805 MUR810 MUR815 MUR820 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 003 ■ MUR830 MUR840 MUR850 MUR860 MUR820, MUR840 and MUR860 are Motorola Preferred Devices SWITCHMODE POWER RECTIFIERS ULTRAFAST


    OCR Scan     		3b72S5 Q0fib477 175QC O-220 MUR805 MUR830 MUR810 MUR840 MUR815 MUR850 MUR850 motorola mur850 MUR830 MUR820 MUR840 MUR860 T0810 PDF

    RURP1S60

    Abstract: RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR810 MUR1550
    Text: 5-3 ULTRAFAST SINGLE DIODES Selection Guide Continued HARRIS ULTRAFAST RECOVERY RECTIFIER PRODUCT LINE 2 LEAD TO-247 TO-220AC ' f <AVG) 15A SINGLE LEAD TO-21B •f <AVG> 30A 30A ^F(AVQ) 75A/B0A 50A 50A 75A/80A Vrrm BA 100A 150A 100V MUR810 RURP810 MUR1510 RURP3010 RURG3010


    OCR Scan     		O-220AC O-247 O-21B MUR810 RURP810 MUR815 RURP815 MUR820 RURPB20 MUR840 RURP1S60 RURP880 RURP3080 ULTRAFAST 600V RURG8040 MUR1550 PDF

    BYT01-200

    Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference
    Text: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600


    OCR Scan     		1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP BYT01-200 UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference PDF