BC373 Search Results

BC372

Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
Contextual Info: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g

BC373

Abstract: BC372 TO226AA
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit C o lle c to r-E m itte r Voltage VCES 100 80 Vdc C o lle c to r-B a s e Voltage

bc373 equivalent

Abstract: BC372 equivalent BC237 JC 201 SC
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES

BC372

Abstract: BC373
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

BC272

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

BC372

Abstract: BC373
Contextual Info: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous

MLED96

Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B

bc272

Abstract: BC372 BC373 DSA0011025
Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous

2904 kd

Contextual Info: BC372 BC373 M AXIM UM RATINGS Symbol BC 372 BC 3 73 Collector-Emitter V oltage Rating VCES 100 80 Vdc C ollector-Base V oltage VCBO 100 80 V dc Em itter-Base V oltage U nit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 V dc Collector Current — C o n tin u o u s

Transistors nd RR

Abstract: 8C372
Contextual Info: BC372 BC373 M A X IM U M R A T IN G S Symbol 8C372 BC373 C o lle ctor-E m itter Voltage VCES 100 80 Vdc C ollector-Base Voltage V CB O 100 80 Vdc Em itter-Base Voltage Rating Unit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 Vdc C ollector C urrent — C ontinuous

BC373

Abstract: transistors BC372 BC372
Contextual Info: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage

Contextual Info: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector −Emitter Voltage VCES 100 80 Vdc Collector −Base Voltage VCBO 100 80 Vdc Emitter −Base Voltage VEBO 12 Vdc Collector Current — Continuous

Contextual Info: BC373-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.10k

Contextual Info: BC373-40 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.60k

bc373

Abstract: BC372
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC372 BC373 80 Vdc 80 Vdc VCES 100 C ollector-B ase Voltage VCBO 100 E m itte r-B a se Voltage

Contextual Info: BC373-25 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.25k

BC373RL1G

Abstract: BC373R BC372 BC372G BC373 BC373RL1
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector- Emitter Voltage VCES 100 80 Vdc Collector-Base Voltage v CBO 100 80 Vdc Emitter-Base Voltage

TRANSISTOR 318

Abstract: Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725
Contextual Info: BC372 BC373 NPN SILICON HIGH VOLTAGE . . . designed foruserelay DAR LINGTON driver and all inductive load applications. . High Collector-Emitter BVCES Breakdown Voltage 100 V at 100 PA for BC372 -80 V at 100 VA for BC373 ● High Current gain lc- . 100/mAdc,

BC373RL1G

Abstract: BC373 BC372 BC372G BC373G BC373RL1 BC373ZL1 BC373ZL1G BC373R
Contextual Info: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage

MPSA25

Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
Contextual Info: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction