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    BC517 Price and Stock

    onsemi BC517-D74Z

    TRANS NPN DARL 30V 1.2A TO92-3
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    DigiKey BC517-D74Z Cut Tape 11,804 1
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    BC517-D74Z Ammo Pack 10,000 2,000
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    Mouser Electronics BC517-D74Z 3,888
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    Newark BC517-D74Z Bulk 3,749 5
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    BC517-D74Z Bulk 4,000
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    Onlinecomponents.com BC517-D74Z 6,000
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    Rochester Electronics BC517-D74Z 3,175 1
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    TME BC517-D74Z 2,602 1
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    Chip One Stop BC517-D74Z Cut Tape 179
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    EBV Elektronik BC517-D74Z 8,000 11 Weeks 2,000
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    Master Electronics BC517-D74Z 6,000
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    New Advantage Corporation BC517-D74Z 6,000 1
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    onsemi BC517

    TRANS NPN DARL 30V 1.2A TO-92
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    Quest Components BC517 240
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    Vyrian BC517 494
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    onsemi BC517G

    TRANS NPN DARL 30V 1A TO92
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    NXP Semiconductors BC517,112

    TRANS NPN DARL 30V 0.5A TO92-3
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    onsemi BC517RL1G

    TRANS NPN DARL 30V 1A TO92
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    ComSIT USA BC517RL1G 2,000
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    BC517 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC517 Fairchild Semiconductor TRANS DARLINGTON NPN 30V 1.2A 3TO-92 Original PDF
    BC517 Infineon Technologies TRANS DARLINGTON NPN 30V 0.5A 3TO-92 Original PDF
    BC517 Korea Electronics TRANS DARLINGTON NPN 30V 0.5A 3TO-92 Original PDF
    BC517 Motorola Darlington Transistors NPN Silicon Original PDF
    BC517 NXP Semiconductors BC517 - NPN Darlington transistor - fT min: 220 typ. MHz; hFE max:>30000 ; hFE min: 30000 ; IC max: 500 mA; Polarity: NPN ; Ptot max: 625 mW; VCEO max: 30 V Original PDF
    BC517 On Semiconductor Darlington Transistor NPN Original PDF
    BC517 On Semiconductor Darlington Transistors NPN Silicon Original PDF
    BC517 Philips Semiconductors NPN Darlington transistor Original PDF
    BC517 Philips Semiconductors Small-signal Transistors Original PDF
    BC517 Siemens Cross Reference Guide 1998 Original PDF
    BC517 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC517 Various Russian Datasheets Transistor Original PDF
    BC517 Korea Electronics General Purpose Transistor Scan PDF
    BC517 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    BC517 Micro Electronics Semiconductor Device Data Book Scan PDF
    BC517 Micro Electronics SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS Scan PDF
    BC517 Micro Electronics Semiconductor Devices Scan PDF
    BC517 Motorola European Master Selection Guide 1986 Scan PDF
    BC517 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC517 Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    BC517 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BC517 data sheet

    Abstract: transistor BC517 BC517
    Text: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage


    Original
    BC517 BC517 data sheet transistor BC517 BC517 PDF

    bc517

    Abstract: StR 40000 or transistor transistor BC517
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA


    Original
    M3D186 BC517 BC516. MAM302 SCA63 115002/00/04/pp8 bc517 StR 40000 or transistor transistor BC517 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C


    Original
    BC517 226AA) PDF

    BC517

    Abstract: BC517 data sheet
    Text: BC517 NPN Silicon Darlington Transistor COLLECTOR 1 BASE 2 EMITTER 3 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCB 40 V Emitter Base Voltage VEB


    Original
    BC517 100mA, 100nA, 100MHz BC517 BC517 data sheet PDF

    bc517

    Abstract: Transistor B C 458 c 458 c transistor transistor c 458 Transistor bc517
    Text: BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted


    Original
    BC517 bc517 Transistor B C 458 c 458 c transistor transistor c 458 Transistor bc517 PDF

    transistor BC517

    Abstract: bc517 BC516 npn darlington SC-43A
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 2003 Oct 16 2004 Nov 05 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA


    Original
    M3D186 BC517 BC516. MAM302 SCA76 R75/06/pp6 transistor BC517 bc517 BC516 npn darlington SC-43A PDF

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original
    ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA PDF

    bc517

    Abstract: BC517 data sheet
    Text: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N MAXIMUM RATING Ta=25ᴱ RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V V Collector Current IC 500 mA


    Original
    BC517 bc517 BC517 data sheet PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation


    Original
    BC517 PDF

    019G

    Abstract: BC517 data sheet BC517
    Text: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage


    Original
    BC517 019G BC517 data sheet BC517 PDF

    BC517 data sheet

    Abstract: BC517
    Text: BC517 NPN Silicon Darlington Transistor COLLECTOR 1 BASE 2 EMITTER 3 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol Value Unit Collector Emitter Voltage VCES 30 V Collector Base Voltage VCB 40 V Emitter Base Voltage VEB


    Original
    BC517 100mA, 100nA, 100MHz BC517 data sheet BC517 PDF

    bc517

    Abstract: BC517 data sheet transistor BC517
    Text: SEMICONDUCTOR BC517 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC517 2. Marking 3 4 No. 1998. 6. 23 Item Marking Description Device Name BC517 BC517 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.


    Original
    BC517 bc517 BC517 data sheet transistor BC517 PDF

    bc517

    Abstract: str 6707 datasheet BC517 data sheet npn darlington StR 40000 BC516 BP317 James
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor


    Original
    M3D186 BC517 BC516. MAM302 SCA53 117047/00/03/pp8 bc517 str 6707 datasheet BC517 data sheet npn darlington StR 40000 BC516 BP317 James PDF

    TRANSISTOR BC 157

    Abstract: BC517G bc517 BC517RL1G BC517ZL1G BC517 model file
    Text: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage


    Original
    BC517 BC517/D TRANSISTOR BC 157 BC517G bc517 BC517RL1G BC517ZL1G BC517 model file PDF

    BC517

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA BC517 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation


    OCR Scan
    BC517 100mA, 100MHz BC517 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 e m itte r • V ery high DC current gain (min. 3 0000). 2 base 3 co lle cto r APPLICATIONS


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    BC517 BC516. SC-43 PDF

    BC517

    Abstract: transistor BC517
    Text: Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 emitter • Very high DC current gain (min. 30000). 2 base 3 collector APPLICATIONS • Where very high amplification is required.


    OCR Scan
    BC517 BC516. BC517 transistor BC517 PDF

    bc517

    Abstract: BC517S
    Text: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous


    OCR Scan
    BC517, BC517 O-226AA) BC517S PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter


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    0DE755b BC517 BC516. PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base


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    bb53131 BC517. PDF

    Untitled

    Abstract: No abstract text available
    Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.


    OCR Scan
    BC516 BC517 T0-92F 400mA 625mW 0430B 0650B 4300B 6500B 20MHz PDF

    BC516

    Abstract: BC517 HFE-30
    Text: N AMER P H I L I P S / D I S C R E T E bTE D • b b5 3T 31 G0E755b Ô00 L '' BC517 SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic T O -92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A


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    bb53T31 G0E755b BC517 BC516. BC516 BC517 HFE-30 PDF

    BC517

    Abstract: BC516 bc516 micro electronics bc 517
    Text: BC 5 1 6 BC 5 1 7 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS JP*. %. CASE T0-92F The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence


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    BC517 T0-92F 400mA 625mW 100mA BC516 20MHz 80x69477 bc516 micro electronics bc 517 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC517 MAXIMUM RATINGS Rating Symbol C o lle c to r -E m itte r V o lta g e Value CASE 29-04, STYLE 17 TO-92 TO-226AA Unit VCES 30 V dc C o lle c to r-B a s e V o lta g e VCB 40 Vdc E m itte r-B a s e V o lta g e Veb 10 V dc C cH e cto r C u rre n t — C o n tin u o u s


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    BC517 O-226AA) PDF