MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
175oC
MUR8100
RURP8100
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MU8100
Abstract: No abstract text available
Text: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MU8100
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MU8100
Abstract: MUR8100E MU810 RUR8100
Text: MUR8100E, RURP8100 March 2001 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The RUR8100 is an Ultrafast Diode with low forward voltage drop. This device is intended for use as freewheeling and clamping Diodes in a variety of switching
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MUR8100E,
RURP8100
RUR8100
MUR8100E
RURP8100
O-220AC
MU8100
MU810
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Untitled
Abstract: No abstract text available
Text: MUR8100E, RURP8100 November 2013 Data Sheet Features 8 A, 1000 V Ultrafast Diodes • Ultrafast Recovery trr = 100 ns @ IF = 8 A The MUR8100E, RUR8100 is an ultrafast diode with low forward voltage drop. This device is intended for use as freewheeling and clamping diodes in a variety of switching
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MUR8100E,
RURP8100
RUR8100
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MUR8100
RURP8100
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MU8100
Abstract: 200a gto preliminary MUR8100E RUR8100 RURP8100 100a 1000v GTO
Text: MUR8100E, RURP8100 Data Sheet December 2002 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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MUR8100E,
RURP8100
MUR8100E
RUR8100
MU8100
200a gto preliminary
RURP8100
100a 1000v GTO
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MUR8100
Abstract: MUR8100E RUR8100 RURP8100
Text: MUR8100E, RURP8100 Data Sheet January 2000 File Number 2780.4 8A, 1000V Ultrafast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes trr < 75ns with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride
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MUR8100E,
RURP8100
MUR8100E
RUR8100
175oC
MUR8100
RURP8100
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RURP8100CC
Abstract: No abstract text available
Text: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted
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RURP8100CC
RURP8100CC
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1334 diode
Abstract: RURP880CC RURP8100CC RURP870CC RURP890CC
Text: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S E M I C O N D U C T O R 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <85ns JEDEC TO-220AB o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C
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RURP870CC,
RURP880CC,
RURP890CC,
RURP8100CC
O-220AB
RURP890CC
RURP8100CC
1-800-4-HARRIS
1334 diode
RURP880CC
RURP870CC
RURP890CC
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RURP8100CC
Abstract: IGBT 1000V .200A
Text: RURP8100CC Data Sheet January 2002 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP8100CC
RURP8100CC
175oC
IGBT 1000V .200A
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CTX12SL
Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4
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10BF10
10BF100
10BF20
10BF40
10BF60
10BF80
10BQ015
10BQ040
10BQ060
10BQ100
CTX12SL
CTX12S
CTX-12SL
STPS1045CT
RS8KT
MBR020
BYT30P-600
RS8DT
FMS-3FU
BYT01-200
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CTX12S
Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40
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SMBYW01-200
16CPF20
BYW99W-200
10BF100
STTA112U
16CTQ100
STPS20H100CT
10BF20
16CTQ100S
CTX12S
CTX12SL
CTX-12SL
CTB34M
FMPG3F
BYV10-40 equivalent
BAT42 equivalent
STPS3045CW Equivalent
BYV42-200
CTL22S
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RURP880
Abstract: MUR890 MUR870E MUR870 MUR890E RUR880 MUR880E MUR880 MUR8100E RUR870
Text: S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE o CATHODE • +175 C Rated Junction Temperature
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MUR870E,
MUR880E,
MUR890E,
MUR8100E,
RURP870,
RURP880,
RURP890,
RURP8100
O-220AC
RURP880
MUR890
MUR870E
MUR870
MUR890E
RUR880
MUR880E
MUR880
MUR8100E
RUR870
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CTX12S
Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent
Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
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SGRECT/0802
CTX12S
CTX12SL
BYV255-200
W210PIV400
SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT
smd schottky diode A2 SOD-123
BYV10-40 PSpice
W210PIV-400
shottky barrier diode 100V 100A
BYV52-200 equivalent
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ULTRAFAST SOFT RECOVERY RECTIFIER
Abstract: RURP8100CC
Text: RURP8100CC Data Sheet January 2000 File Number 4021.1 8A, 1000V Ultrafast Dual Diode Features The RURP8100CC is an ultrafast dual diode with soft recovery characteristics trr < 85ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.
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RURP8100CC
RURP8100CC
ULTRAFAST SOFT RECOVERY RECTIFIER
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ctx12s
Abstract: CTX12SL BYV10-40 equivalent CTX-12SL STPS3100 FMPG3F BYT200PIV400 EQUIVALENT BYD33D BYW29-200 equivalent STPS10100
Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4
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10BF10
10BF100
10BF20
10BF40
10BF60
10BF80
10BQ015
10BQ040
10BQ060
10BQ100
ctx12s
CTX12SL
BYV10-40 equivalent
CTX-12SL
STPS3100
FMPG3F
BYT200PIV400
EQUIVALENT BYD33D
BYW29-200 equivalent
STPS10100
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STPS30S45CT
Abstract: CTX12S STPS30S45 CTX12SL BYV42-200 D20LC20 Diode Equivalent DSEK60-02A stth3003cg stth3003cw CTL22S
Text: Rectifiers Selection guide February 2005 STMicroelectronics - February 2005 - Printed in Italy - All rights reserved The STMicroelectronics corporate logo is a registered trademark of the STMicroelectronics group of companies. All other names are the property of their respective owners.
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SGRECT/1104
STPS30S45CT
CTX12S
STPS30S45
CTX12SL
BYV42-200
D20LC20
Diode Equivalent DSEK60-02A
stth3003cg
stth3003cw
CTL22S
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RUR8100
Abstract: MUR8100 MUR8100E RURP8100
Text: MUR8100E, RURP8100 in te rd i Data Sheet Ja nu a ry 2000 File N u m b e r 2 7 8 0 .4 8A, 1000V Ultra fast Diodes Features The MUR8100E and RUR8100 are ultrafast diodes • Ultrafast with Soft Recovery .<75ns • Operating Temperature. 175°C
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MUR8100E,
RURP8100
MUR8100E
RUR8100
TA09617.
Q104b7b
MUR8100
RURP8100
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Diode MUR880E
Abstract: RUR880 MUR890E RUR8100 MUR870E MUR8100E MUR880E RUR870 RUR890 LF 1A
Text: MUR870E, MUR880E, MUR890E MUR8100E, RUR870, RUR880 0042377 2Tb « H A S RUR8909 RUR8100 HARRIS SbE D H302271 8A Ultrafast Diode With Soft Recovery Characteristic M a y 1991 HARRIS SEMICON] SECTOR ~ Q 3 ~ 1 7 Package r e m u ra n T O -2 2 0 A C TOP VIEW • Ultrafast with Soft Recovery Characteristic
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MUR870E,
MUR880E,
MUR890E
MUR8100E,
RUR870,
RUR880
43Q2271
0G42377
RUR890,
RUR8100
Diode MUR880E
RUR880
RUR8100
MUR870E
MUR8100E
MUR880E
RUR870
RUR890
LF 1A
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RURP880CC
Abstract: No abstract text available
Text: RURP870CC, RURP880CC, RURP890CC, RURP8100CC S em iconductor 8A, 700V - 1000V Ultrafast Dual Diodes June 1995 Package Features • Ultrafast with Soft Recovery. <85ns JEDEC TO-220AB • Operating
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RURP870CC,
RURP880CC,
RURP890CC,
RURP8100CC
O-220AB
O-220AB
RURP880CC
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RURP880
Abstract: No abstract text available
Text: hßA R m S ' — MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Aprii 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 75ns JEDEC TO-220AC ANODE • +175°C Rated Junction Temperature
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PDF
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MUR870E,
MUR880E,
MUR890E,
MUR8100E,
RURP870,
RURP880,
RURP890,
RURP8100
O-220AC
RURP880
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transistor 700v
Abstract: RURP880 MUR890E transistor 800V 1A RUR880
Text: m M A D D IQ 3 j MUR870E, MUR880E, MUR890E MUR8100E, RURP870, RURP880 RURP890, RURP8100 8A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features JEDEC TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic (tRR < 75ns • +175°C Rated Junction Temperature
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PDF
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MUR870E,
MUR880E,
MUR890E
MUR8100E,
RURP870,
RURP880
RURP890,
RURP8100
O-220AC
transistor 700v
transistor 800V 1A
RUR880
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