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    BC338 Price and Stock

    Rochester Electronics LLC BC33840BU

    TRANS NPN 25V 0.8A TO92-3
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    DigiKey BC33840BU Bulk 21,122 11,539
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    onsemi BC338

    TRANS NPN 25V 0.8A TO92-3
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    Avnet Americas BC338 Bulk 4 Weeks 1
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    onsemi BC338BU

    TRANS NPN 25V 0.8A TO92-3
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    DigiKey BC338BU Bulk 10,000
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    Taiwan Semiconductor BC338-40

    TO-92, 30V, 0.8A, NPN BIPOLAR TR
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    DigiKey BC338-40 Ammo Pack 4,000
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    Taiwan Semiconductor BC338-16

    TO-92, 30V, 0.8A, NPN BIPOLAR TR
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    DigiKey BC338-16 Ammo Pack 4,000
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    Find more BC338 price and stock on Findchips.com

    BC338 Datasheets (225)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC338 Diotec Si-Epitaxial PlanarTransistors Original PDF
    BC338 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BC338 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Original PDF
    BC338 Fairchild Semiconductor Switching and Amplifier Applications Original PDF
    BC338 General Semiconductor Small Signal Transistors (NPN) Original PDF
    BC338 General Semiconductor General Purpose Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Original PDF
    BC338 Infineon Technologies NPN Silicon AF Transistor Original PDF
    BC338 Korea Electronics TRANS GP BJT NPN 25V 0.8A 3TO-92 Original PDF
    BC338 Motorola Amplifier Transistor Original PDF
    BC338 Philips Semiconductors Small-signal Transistors Original PDF
    BC338 Siemens Cross Reference Guide 1998 Original PDF
    BC338 Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC338 Vishay Semiconductors Small Signal Transistors (NPN) Original PDF
    BC338 Vishay Telefunken TRANS GP BJT NPN 25V 0.8A 3TO-92 Original PDF
    BC338 Bharat Electronics Shortform Transistor Data Short Form PDF
    BC338 Crimson Semiconductor Transistor Selection Guide Scan PDF
    BC338 Honey Technology NPN Silicon Epitaxial Planar Transistor Scan PDF
    BC338 ITT Semiconductors Transistors 1980 Scan PDF
    BC338 Korea Electronics General Purpose Transistor Scan PDF
    BC338 Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    ...

    BC338 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer PNP/NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC327, BC327A, BC328 PNP BC337, BC337A, BC338 (NPN) TO-92 EBC


    Original     		PDF BC327, BC327A, BC328 BC337, BC337A, BC338 C-120

    BC338

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. BC338 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter


    Original     		PDF BC338 500mA, 300mA, 100mA, 100MHz BC338

    BC307

    Abstract: BC327 BC328 BC338 BC327 W 75
    Text: BC327/328 BC327/328 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC337/BC338 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		PDF BC327/328 BC337/BC338 BC327 BC328 BC307 BC327 BC328 BC338 BC327 W 75

    equivalent for BC327

    Abstract: BC327 BC328 BC338 bc337 m 337a
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP BC337/A BC338 NPN SILICON PLANAR EPITAXIAL TRANSISTORS TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" C BE General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier


    Original     		PDF BC327/A BC328 BC337/A BC338 338Rev 290606D C-120 equivalent for BC327 BC327 bc337 m 337a

    BC338N

    Abstract: BC328 BC338 2BC328
    Text: SEMICONDUCTOR BC328 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=-800mA. DC Current Gain : hFE=100 630 VCE=-1V, Ic=-100mA . For Complementary with NPN type BC338. N E K


    Original     		PDF BC328 -800mA. -100mA) BC338. -100mA -500mA, -50mA -300mA -10mA, 100MHz BC338N BC328 BC338 2BC328

    BC338

    Abstract: bc33
    Text: SEMICONDUCTOR BC338 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 25 BC338 2. Marking 4 Item Marking Description Device Name BC338 BC338 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.


    Original     		PDF BC338 BC338 bc33

    BC328

    Abstract: BC338 2BC338
    Text: SEMICONDUCTOR BC338 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A High Current : IC=800mA. DC Current Gain : hFE=100 630 VCE=1V, Ic=100mA . For Complementary with PNP type BC328. N E K G


    Original     		PDF BC338 800mA. 100mA) BC328. 00TER 100mA 500mA, 300mA -10mA, 100MHz BC328 BC338 2BC338

    BC337

    Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25
    Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J


    Original     		PDF BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25

    BC338-16

    Abstract: BC337 BC337 B 011
    Text: MCC Features • • • BC337-16/25/40 BC338-16/25/40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338)


    Original     		PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338 BC338-16 BC337 B 011

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Collector-base Voltage :VCBO=50V BC337 , VCBO=30V(BC338) x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1


    Original     		PDF BC337-16/25/40 BC338-16/25/40 625Watts BC337) BC338) 10mAdc, BC337 BC338

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337，-16，-25,-40 TRANSISTOR（NPN ） BC338，-16，-25,-40 TO—92 FEATURES Power dissipation PCM : 0.625 W （Tamb=25℃） Collector current ICM : 0.8 A Collector-base voltage


    Original     		PDF BC337ï BC338ï BC337 BC338 100MHz 270TYP 050TYP

    bc337

    Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
    Text: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO


    Original     		PDF BC337 BC338 BC337, BC337-16, BC337-25, BC337-40, BC338-25 226AA) cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716

    BC337L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS „ FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 Lead-free: BC337L/BC338L Halogen-free: BC337G/BC338G


    Original     		PDF BC337/BC338 BC327/328 BC337L/BC338L BC337G/BC338G BC337-x-T92-B BC337-x-T92-K BC338-x-T92-B BC338-x-T92-K BC337L-x-T92-B BC337L-x-T92-K BC337L

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING AND AMPLIFIER APPLICATIONS •Suitable for AF-Driver stages and low power output stages ·Complement to BC338 ABSOLUTE MAXIMUM RATINGS TO-92 TA=25 Characteristic Symbol Rating Unit Collector-Emitter Voltage VCES -30 V Collector-Emitter Voltage VCEO


    Original     		PDF BC338 -10mA -100mA -30mA -500mA -50mA -300mA -10mA

    bc337 b 011

    Abstract: BC337
    Text: MCC BC337-16/25/40 BC338-16/25/40   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features x x x Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A


    Original     		PDF 625Watts BC337) BC338) BC337-16/25/40 BC338-16/25/40 bc337 b 011 BC337

    Untitled

    Abstract: No abstract text available
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


    Original     		PDF BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16

    BC337 noise

    Abstract: BC327 Q1 BC337 sot23 BC327 sot23 Transistor BC327 Q1 bc557c BC549B BC327 SOT 23 bc558b equivalent 2N4401 surface mount
    Text: SMALL SIGNAL BIPOLAR TRANSISTORS VCEO Volt Low Noise 30 Switching 25 30 40 Leaded TO-92 NPN BC549B BC549C 2N4124 BC338-16 BC338-25 BC338-40 BC548A BC548B BC548C 2N3904 2N4401* MPS2222A* BC547A BC547B BC547C Package Surface Mount Device SOT-23 PNP NPN PNP


    Original     		PDF BC549B BC549C 2N4124 OT-23 BC328-16 BC328-25 BC328-40 BC558A BC558B BC558C BC337 noise BC327 Q1 BC337 sot23 BC327 sot23 Transistor BC327 Q1 bc557c BC549B BC327 SOT 23 bc558b equivalent 2N4401 surface mount

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		PDF BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT

    Untitled

    Abstract: No abstract text available
    Text: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF O-92F BC327, BC328 BC337, BC338 BC327 BC328 6251BW

    BC331

    Abstract: BC331 transistor transistor BC331 BC337 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327 BC327A
    Text: BC337 BC337A BC338 1 PHILIPS INTERNATIONAL SbE D • 7110fl2b OOMllflfl DTX H I P H I N - SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, primarily intended for use in driver and output stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.


    OCR Scan     		PDF BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337 BC331 BC331 transistor transistor BC331 bc337-40 npn transistor BC337A BC337-26 TRANSISTOR BC338 BC327

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    BC338

    Abstract: BC337A BC337 BC327 BC327A BC328 BC337-16 DDE7530 DDE7532
    Text: b^E D • bL S3^131 DDE753D 5T4 BC337 BC337A BC338 IAPX N AflER P H I L I P S / D I S C R E T E SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic T O -92 envelopes, p rim a rily intended fo r use in d riv e r and o u tp u t stages o f a udio a m plifiers.


    OCR Scan     		PDF DDE7530 BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 BC337A BC337 BC327 BC337-16 DDE7532

    BC327

    Abstract: BC307 BC328 BC338 BC337 pnp transistor
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC327/328 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC337/BC338 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Sym bol C ollector-E m itter Voltage


    OCR Scan     		PDF BC327/328 BC337/BC338 BC327 BC328 -10mA, BC328 BC327 BC307 BC338 BC337 pnp transistor

    BC337

    Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


    OCR Scan     		PDF BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327