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    LT2A02 Search Results

    LT2A02 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LT2A02 Diodes Short Form Selection Guide Original PDF
    LT2A02 Lite-On Technology 100V, 2.0A plastic silicon rectifier Original PDF
    LT2A02 Vishay Standard Rectifier (trr greater than 500nsec) Original PDF
    LT2A02G Diodes Short Form Selection Guide Original PDF
    LT2A02G Lite-On Technology 100V, 2.0A glass passivated rectifier Original PDF
    LT2A02G Lite-On Technology Glass Passivated Rectifier Original PDF
    LT2A02G Vishay Standard Rectifier (trr greater than 500nsec) Original PDF

    LT2A02 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR LT2A01 thru LT2A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes PLASTIC SILICON RECTIFIERS DO-15 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability A A


    Original     		PDF LT2A01 LT2A07 DO-15 DO-15

    LT2A01

    Abstract: LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07
    Text: LITE-ON SEMICONDUCTOR LT2A01 thru LT2A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes PLASTIC SILICON RECTIFIERS DO-15 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability A A


    Original     		PDF LT2A01 LT2A07 DO-15 DO-15 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		PDF MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		PDF MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode

    smd marking 911 zener

    Abstract: d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt
    Text: RETURN TO SHORT FORM TABLE OF CONTENTS ################################### RETURN TO SHORT FORM INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Short Form Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 September 1999 Specifications are subject to change without notice.


    Original     		PDF M5263B, ZMM5264B, ZMM5265B, ZMM5266B, ZMM5267B, ZMM56, ZMM62, ZMM68, ZMM75, smd marking 911 zener d3g smd NPN Transistor smd code LY 83 marking codes transistors a8 sot-23 TRANSISTOR SMD MARKING CODE s2a 1045ct mosfet SOD-123 a18 W06* MARKING smd code KBJ 3580 6045pt

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    LT2A07

    Abstract: LT2A05 LT2A01 LT2A02 LT2A03 LT2A04 LT2A06
    Text: LITE-ON SEMICONDUCTOR LT2A01 thru LT2A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes PLASTIC SILICON RECTIFIERS DO-15 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability The plastic material carries UL recognition 94V-0


    Original     		PDF LT2A01 LT2A07 DO-15 DO-15 300us 01-Dec-2000, KDAD02 LT2A07 LT2A05 LT2A02 LT2A03 LT2A04 LT2A06

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR LT2A01 thru LT2A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes PLASTIC SILICON RECTIFIERS DO-15 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability A A


    Original     		PDF LT2A01 LT2A07 DO-15 DO-15 300us

    LT2A01

    Abstract: LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07 diode LT2A05
    Text: LT2A01–LT2A07 Vishay Lite–On Power Semiconductor 2.0A Rectifier Features D Diffused junction D High current capability and low forward voltage drop D Surge overload rating to 70A peak D Plastic material – UL Recognition flammability classification 94V–0


    Original     		PDF LT2A01 LT2A07 LT2A01 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 D-74025 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07 diode LT2A05

    LT2A05

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR LT2A01 thru LT2A07 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT - 2.0 Amperes PLASTIC SILICON RECTIFIERS DO-15 FEATURES Low cost Diffused junction Low forward voltage drop Low reverse leakage current High current capability A A


    Original     		PDF LT2A01 LT2A07 DO-15 DO-15 LT2A05

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		PDF MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    MUR1560 equivalent

    Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
    Text: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON


    Original     		PDF MR852 VHE1401 VHE1402 VHE1403 VHE1404 VHE205 VHE210 MUR1560 equivalent 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    PBL302

    Abstract: kbp 3510 m5818 r 1504 C3510W
    Text: ALPHANUMERICAL INDEX PARTS NO. PAG E PARTS PAG E PARTS PAG E PARTS NO. NO. NO. NO. NO. N O. N O. 1N 4001 . . . . . . 150 . 128 E R 1007 . . . . . . 84 K BP 01G . . . . 1N 5401G . . . . . . . . 126 1 N 4 0 0 1 G L . . . . . 12 4 1N5402 . . . . . 158 A R 2 5 0 8 G . . . . . 136


    OCR Scan     		PDF 5401G 5402G 1N5402 5403G 5404G 1N5405 5406G 5408G PBL302 kbp 3510 m5818 r 1504 C3510W

    LT2A05G

    Abstract: No abstract text available
    Text: LT2A01G-LT2A07G Vishay Lite-On Power Semiconductor 2.0A Glass Passivated Rectifier Features • G lass passivated die construction • Diffused junction • High current capability and low forw ard voltage drop • Surge overload rating to 65A peak • Plastic m aterial - UL R ecognition flam m ability


    OCR Scan     		PDF LT2A01G-LT2A07G LT2A01G LT2A02G LT2A03G LT2A04G LT2A05G LT2A06G LT2A07G D-74025 24-Jun-98

    Untitled

    Abstract: No abstract text available
    Text: LT2A01-LT2A07 Vishay Lite-On Power Semiconductor ▼ 2.0A Rectifier Features Diffused junction High current capability and low forw ard voltage drop Surge overload rating to 70A peak Plastic m aterial - UL Recognition fla m m ab ility classification 9 4 V -0


    OCR Scan     		PDF LT2A01-LT2A07 LT2A01 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07 D-74025 24-Jun-98

    FBU4K

    Abstract: FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406
    Text: RECTIFIER INDEX C R O SS REFERENCE LITE-ON MOTOROLA Gl P/N P/N P/N 1 N4001 1N 4001 1N4001G IR P/N FU JI SGS-THOMSON VARO FAGOR P/N P/N P/N P/N 1N4001 1N4001 1N4001G L 126 1N4002 1N4002G 1 N4002 10D1 ERB12-1 1N4001F 148 1N4002 150 126 1 N 4 0 0 2 GP 1N4002GL


    OCR Scan     		PDF 1N4001 N4001 1N4001G 4001L 1N4002 1N4002G 1N4002GL 1N4002L 1N4003 FBU4K FBU4J PBL302 1DQ04 2FBP06 FBU4G 1N4007 FAGOR FBU8K KBPC251OW 1IN5406

    SVI 3003

    Abstract: svi 4004 KBJ 3510 PBDF153 N5406G PBP205 1N 4007 SMD L3040PT d3g smd P2506W
    Text: QUICK REFERENCE TABLE FOR SWITCHING RECTIFIERS SC H O TTK Y B A R R IE R R E C T IF IE R S -^Ç R V V TY PE NO. 30 20 35 45 40 50 60 CASE PAGE \ 1N 5817 1N 5818 - 1N 5819 - SB120 SB130 - SB140 - 1 N 5820 1N 5821 - 1N 5822 - - DO-41 30 LE A D 1 SB150 _ SB160


    OCR Scan     		PDF SB130 SB330 SB530 SB830 SB140 SB340 SB540 SB840 SBR540 SBR840 SVI 3003 svi 4004 KBJ 3510 PBDF153 N5406G PBP205 1N 4007 SMD L3040PT d3g smd P2506W

    Untitled

    Abstract: No abstract text available
    Text: POWER LITEM 11 SEMICONDUCTORS L T 2 A 0 1 th r u L T 2 A 0 7 DO-15 FEATURES • L o w co st • D iffu s e d ju n c tio n 140 13.6 104 2.6) D IA • • L o w leakage • L o w fo rw a rd vo lta g e d ro p • H igh c u rre n t c a p a b ility • MIN Easily cle a n ed w ith F re o n , A lc o h o l, C h lo ro th e n e and


    OCR Scan     		PDF DO-15 0201AD

    Untitled

    Abstract: No abstract text available
    Text: LITEM Í I SEMICONDUCTORS LT2A01 thru LT2A07 VO LTAGE RANGE 5 0 t o 1 0 0 0 V o lts 2 AMPS. PLASTIC SILICON RECTIFIERS CURRENT 2 . 0 A m p e re s DO -15 F EA T U R ES ~r • L o w cost • D iffu s e d ju n c tio n .1 4 0 3.61 • L o w leakage .1 0 4 (2 .6


    OCR Scan     		PDF LT2A01 LT2A07 LT2A02 LT2A03 LT2A04 LT2A05 LT2A06 LT2A07