MPF3822 Search Results

MPF3822 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MSC2404 Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage	Original	MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72	PDF
BF245 Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30	Original	MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568	PDF
stencil Abstract: BC237 automatic heat detector project report BC393 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and	Original	BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1	PDF
bs170 replacement Abstract: BC237 BC30 transistor K 2056 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)	Original	BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056	PDF
transistor bc237 bc337 Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage	Original	BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT	PDF
BC237 Abstract: MPS-A70 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage	Original	MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent	PDF
bc182 equivalent 2n2907 Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO	Original	BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent	PDF
transistor MPS5771 Abstract: BC237 bfw4 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Speed Switching Diode MMBD914LT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM surge 500 mAdc Symbol Max Unit	Original	MMBD914LT1 236AB) DE218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 transistor MPS5771 BC237 bfw4	PDF
P2d MARKING CODE Abstract: H2A transistor ev 2816 BC237 transistor 2N2906 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO – 300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage	Original	PZTA92T1 261AA ELECTRI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 P2d MARKING CODE H2A transistor ev 2816 BC237 transistor 2N2906	PDF
WT transistor Abstract: BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Transistor N–Channel 2 SOURCE MMBF5484LT1 Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Forward Gate Current 1 Symbol Value Unit VDG 25 Vdc	Original	MMBF5484LT1 236AB) C218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 WT transistor BC237 S11S 2n441 BF244B 2N3799 JFET BF245 C4 SOT-323 2N3819 MOTOROLA	PDF
2N5457 MOTOROLA Abstract: 2N5457 equivalent BC237 transistor 2N5457 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Ċ General Purpose N–Channel — Depletion 2N5457 1 DRAIN *Motorola Preferred Device 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc	Original	2N5457 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N5457 MOTOROLA 2N5457 equivalent BC237 transistor 2N5457	PDF
BC237 Abstract: jedec package TO-226AA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Series Switching Diode BAV99LT1 ANODE 1 Motorola Preferred Device CATHODE 2 3 CATHODE/ANODE 3 1 2 CASE 318 – 08, STYLE 11 SOT– 23 TO – 236AB MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage	Original	BAV99LT1 236AB) J218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 jedec package TO-226AA	PDF
2n1613 equivalent Abstract: BC237 diode l 0607 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BAV99WT1 BAV99RWT1 SC-70/SOT-323 Dual Series Switching Diode Motorola Preferred Devices The BAV99WT1 is a smaller package, equivalent to the BAV99LT1. Suggested Applications • ESD Protection • Polarity Reversal Protection	Original	SC-70/SOT-323 BAV99WT1 BAV99LT1. BAV99RWT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2n1613 equivalent BC237 diode l 0607	PDF

2N5458 Abstract: BC237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.	Original	M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1 Volta218A MSC1621T1 2N5458 BC237	PDF
2N16 Abstract: BC237 BCY72 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.	Original	MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72	PDF
BC237 Abstract: MARKING CODE diode sod123 W1 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBD54DWT1 Preliminary Information Dual Schottky Barrier Diodes Motorola Preferred Device These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces	Original	MBD54DWT1 Reve218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1	PDF
bc327 replacement Abstract: equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors PNP Silicon BC327,-16,-25 BC328,-16,-25 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage VCEO –45 –25 Vdc Collector – Base Voltage	Original	BC327 BC328 BC327 BC328 226AA) t218A MSC1621T1 MSC2404 MSD1819A MV1620 bc327 replacement equivalent components for transistor bc328 BC237 bf391 t Motorola MVAM125 bc327 equivalent SOT23 BC327-25	PDF
Transistor BC107 motorola Abstract: transistor motorola 2n3053 transistor BF245 BC237 2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon 14 13 12 11 10 9 8 5 6 7 Motorola Preferred Device NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Emitter Voltage	Original	MPQ3725 Tran218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 Transistor BC107 motorola transistor motorola 2n3053 transistor BF245 BC237 2N2369 transistor pulse generator Gate Driver SOT-363 Marking Code G Transistor BC107b motorola	PDF
BC237 Abstract: BC109C Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Amplifier Switching Transistor MPQ3904 NPN Silicon Motorola Preferred Device 14 13 12 11 10 9 8 5 6 7 NPN 1 2 3 4 MAXIMUM RATINGS 14 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Collector – Base Voltage	Original	MPQ3904 R218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 BC109C	PDF
MPF3821 Abstract: MPF3822 PF382 Text: MPF3821 MPF3822 CASE 29-04, STYLE 5 TO-92 TO-226AA I u ra i MAXIMUM RATINGS Rating Symbol Value Unit V DS 50 V dc D ra in -G a te V o lta g e V DG 50 V dc G a te -S o u rce V o lta g e V GS -5 0 V dc 'D 10 m Adc PD 350 2.8 mW mW C D ra m -S o u rc e V o lta g e	OCR Scan	MPF3821 MPF3822 O-226AA) 2N5457 MPF3822 PF382	PDF
MPF3821 Abstract: MPF3822 Text: MPF3821 MPF3822 CASE 29-04, STYLE 5 TO-92 T0-226AA MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage V DS 50 Vdc Drain-G ate Voltage V DG 50 Vdc G ate-Source Voltage V GS Rating 50 Vdc 'd 10 m Adc Pd 350 2.8 mW mW C Junctio n T em pérature Range Tj	OCR Scan	MPF3821 MPF3822 T0-226AA) 2N5457 T/\822 MPF3822	PDF
MMBF112L Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty	OCR Scan	06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211	PDF
triac zd 607 Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845 Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.	OCR Scan	SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845	PDF

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MPF3822 Search Results

MPF3822 Datasheets Context Search

MSC2404

BF245

stencil

BC237

bs170 replacement

transistor bc237 bc337

BC237

bc182 equivalent 2n2907

transistor MPS5771

P2d MARKING CODE

WT transistor

2N5457 MOTOROLA

BC237

2n1613 equivalent

2N5458

2N16

BC237

bc327 replacement

Transistor BC107 motorola

BC237

MPF3821

MPF3821

MMBF112L

triac zd 607