OD-880E
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission .209 .220 • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022
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OD-880E
880nm
100mA
100Hz
OD-880E
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OD-880E
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission .017 • High uniform output • TO-46 Header .178 .195 .100 .041 All dimensions are nominal in inches unless otherwise
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OD-880E
880nm
100mA
100Hz
OD-880E
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX .080 • High reliability liquid-phase epitaxially grown GaAlAs .209 .220 • 880nm peak emission • High uniform output .017 .178 .195 • TO-46 Header .100 .041 1.00 MIN .022
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OD-880E
880nm
100mA
100Hz
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OD-880E
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS OD-880E FEATURES EPOXY DOME ANODE CASE .145 MAX • High reliability liquid-phase epitaxially grown GaAlAs .209 .212 .080 • 880nm peak emission • High uniform output .017 • TO-46 Header .178 .195 .100 .041 1.00 MIN .022
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OD-880E
880nm
100mA
100Hz
OD-880E
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Untitled
Abstract: No abstract text available
Text: +85 COM-880E -40 C Wide-Range Temperature Intel 3rd Gen. Core COM Express Basic Type 6 CPU Module Features • • • • • • Soldered Onboard 3rd Gen. Intel® Core™ i7-3517UE Processor Integrated Gigabit Ethernet Dual Channels 24-bit LVDS, Analog RGB, and 3 x DDI Ports
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COM-880E
i7-3517UE
24-bit
SLB9635
82579LM
F75111
COM-880E-3517UE
i7-3517UE/
HS-65M2-F2
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K d998 transistor
Abstract: lz 02 1068 D844 voltage regulator
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
K d998 transistor
lz 02 1068
D844 voltage regulator
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a6583
Abstract: CR10 J-STD-020B M30L0R8000B0 M30L0R8000T0
Text: M30L0R8000T0 M30L0R8000B0 256 Mbit 16Mb x16, Multiple Bank, Multi-Level, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 1.7V to 2.0V for program, erase and read – VDDQ = 1.7V to 2.0V for I/O Buffers
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M30L0R8000T0
M30L0R8000B0
54MHz
a6583
CR10
J-STD-020B
M30L0R8000B0
M30L0R8000T0
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Untitled
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
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Untitled
Abstract: No abstract text available
Text: 880E18/32/36CT-xxxV 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 1.8 V or 2.5 V +10%/–10% core power supply
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GS880E18/32/36CT-xxxV
100-Pin
100-lead
880ExxC
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PSRAM
Abstract: RAM 2112 256 word J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B1 M36L0R8060T1 M69KB096AA
Text: M36L0R8060T1 M36L0R8060B1 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory
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M36L0R8060T1
M36L0R8060B1
M36L0R8060T1:
880Dh
M36L0R8060B1:
880Eh
54MHz
PSRAM
RAM 2112 256 word
J-STD-020B
M30L0R8000B0
M30L0R8000T0
M36L0R8060B1
M36L0R8060T1
M69KB096AA
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Untitled
Abstract: No abstract text available
Text: 880E18/32/36BT-333/300/250/200/150 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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GS880E18/32/36BT-333/300/250/200/150
100-Pin
100-lead
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Untitled
Abstract: No abstract text available
Text: 880E18/32/36BT-xxxV 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs n es ig Byte Write and Global Write Byte write operation is performed by using Byte Write enable BW input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for
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GS880E18/32/36BT-xxxV
100-Pin
100-lead
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Untitled
Abstract: No abstract text available
Text: 880E18/32/36CT-xxxI 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 100-Pin TQFP Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect DCD operation • 2.5 V or 3.3 V +10%/–10% core power supply
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GS880E18/32/36CT-xxxI
100-Pin
100-lead
880ExxC
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Untitled
Abstract: No abstract text available
Text: M30L0R8000T2 M30L0R8000B2 256 Mbit x16, multiple bank, multilevel, burst 1.8 V supply Flash memory Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program
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M30L0R8000T2
M30L0R8000B2
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8X305
Abstract: 8X305 assembly manual HP1650A d3800 dp8340 ior 227h Specification of seven segment 5250 PC327 TK 9107 8X305 manual
Text: MPA-II National Semiconductor Application Note 641 Thomas Norcross Paul J Patchen Thomas J Quigley Tim Short Debra Worsley Laura Johnson April 1995 Table of Contents 1 0 INTRODUCTION About This System User Guide Contents of the MPA-II Design Evaluation Kit
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DP8344B
20-3A
8X305
8X305 assembly manual
HP1650A
d3800
dp8340
ior 227h
Specification of seven segment 5250
PC327
TK 9107
8X305 manual
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Untitled
Abstract: No abstract text available
Text: Preliminary 880E18/32/36T-11/11.5/100/80/66 100-Pin TQFP Commercial Temp Industrial Temp 512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 100 MHz–66 MHz 3.3 V VDD 3.3 V and 2.5 V I/O Features Flow Through / Pipeline Reads • FT pin for user-configurable flow through or pipelined operation
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GS880E18/32/36T-11/11
100-Pin
80Mhz
GS880E18/32/36T1
3/2000N;
3/2000O;
9/1999I
1999K880E18/32/36T1
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APC UPS CIRCUIT DIAGRAM
Abstract: OPTICAL PICK-UP DL6 32k nsk crystal clock oscillator 32 knsk crystal clock oscillator pml 009A CIRCUIT DIAGRAM APC UPS 750 OPTICAL PICK-UP DL3 ford ecu decoding APC be 500 UPS CIRCUIT DIAGRAM APC UPS CIRCUIT DIAGRAM 500
Text: COMPART DISC PLAYER S5L9232 DESCRIPTION The S5L9232 is a one-chip LSI for Compact Disc Players including a CMOS RF, Digital Servo, CD digital signal processor, Dynamic Bass Boost, Sigma-Delta D/A converter, and Shock-proof memory controller. FEATURES The S5L9232 has the following features:
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S5L9232
S5L9232
APC UPS CIRCUIT DIAGRAM
OPTICAL PICK-UP DL6
32k nsk crystal clock oscillator
32 knsk crystal clock oscillator
pml 009A
CIRCUIT DIAGRAM APC UPS 750
OPTICAL PICK-UP DL3
ford ecu decoding
APC be 500 UPS CIRCUIT DIAGRAM
APC UPS CIRCUIT DIAGRAM 500
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w16 72
Abstract: DES Encryption TMS320
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
w16 72
DES Encryption TMS320
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Untitled
Abstract: No abstract text available
Text: Intel StrataFlash Wireless Memory L18 28F640L18, 28F128L18, 28F256L18 Datasheet Product Features • High performance Read-While-Write/Erase — 85 ns initial access — 54 MHz with zero wait state, 14 ns clock-todata output synchronous-burst mode — 25 ns asynchronous-page mode
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28F640L18,
28F128L18,
28F256L18
128Mb
16-Mbit
256Mb
16-Kword
128-Mbit
256-Mbit
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D844 voltage regulator
Abstract: 9427h 9216h
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
D844 voltage regulator
9427h
9216h
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PDF
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d2f3
Abstract: EG20T delta dps 298 cp 2A DSCA 114 communication board B43200 MSI 7680 Ver 5.1 Intel ATX smps circuit diagram Intel Atom E6xx SMPS 666 VER 2.3
Text: Intel Platform Controller Hub EG20T Datasheet January 2011 Order Number: 324211-003US INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL’S TERMS AND CONDITIONS
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EG20T
324211-003US
EG20T
EG20T--Ballout
d2f3
delta dps 298 cp 2A
DSCA 114 communication board
B43200
MSI 7680 Ver 5.1
Intel ATX smps circuit diagram
Intel Atom E6xx
SMPS 666 VER 2.3
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880e
Abstract: OD880E
Text: HIGH-POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header All dimensions are nominal in inches unless otherwise specified. ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
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OD-880E
880nm
100mA
100mA
880e
OD880E
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Untitled
Abstract: No abstract text available
Text: HIGH POWER GaAIAs IR EMITTERS OD-880E FEATURES • High reliability liquid-phase epitaxially grown GaAIAs • 880nm peak emission • High uniform output • TO-46 Header • 100% test for minimum power requirement All dimensions are nominal values in inches unless
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OD-880E
880nm
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U8100E Diode
Abstract: U880E Diode u880e U8100E
Text: MOTOROLA Order this document by MUR8100E/D SEMICONDUCTOR TECHNICAL DATA SWITCH MODE Power R ectifiers MUR8100E 880E Ultrafast “E” Series with High Reverse Energy Capability MUR8100E is a Motorola Preferred Device . . . designed for use in switching power supplies, inverters and as free
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MUR8100E/D
MUR8100E
MUR880E
MUR8100E
O-220
U8100E Diode
U880E Diode
u880e
U8100E
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