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    MOSFET 600V LOGIC LEVEL Search Results

    MOSFET 600V LOGIC LEVEL Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET 600V LOGIC LEVEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSS5N60A

    Abstract: data sheet for mosfet sss5n60a logic gate sss5n60
    Text: SSS5N60A Advanced Power MOSFET FEATURES BVDSS = 600 V ! Logic Level Gate Drive RDS on = 2.2Ω ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ID = 2.6 A ! Lower Input Capacitance ! Improved Gate Charge TO-220F ! Extended Safe Operating Area ! Lower Leakage Current : 25 A (Max.) @ VDS = 600V


    Original     		PDF SSS5N60A O-220F SSS5N60A data sheet for mosfet sss5n60a logic gate sss5n60

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    igbt full h bridge 25A

    Abstract: 400V igbt dc to dc buck converter 600V igbt dc to dc buck converter
    Text: AMG-DF102 Full Bridge MOSFET/IGBT Driver up to 600V 1. Functional Description of the AMG-DF102 The AMG-DF102 is a high voltage MOSFET and IGBT full bridge IC with corresponding high and low side channels, and automatic dead time insertion. It also has an additional driver in


    Original     		PDF AMG-DF102 AMG-DF102 igbt full h bridge 25A 400V igbt dc to dc buck converter 600V igbt dc to dc buck converter

    IRS21962S

    Abstract: IRS21962SPBF JESD22-A115 JESD78 IRS21962STRPBF
    Text: Datasheet No – PD97383 March 17, 2009 IRS21962S Dual channel high-side drivers with floating input Features • • • • • • Two independent high side output channels CMOS Schmitt trigger inputs with pull down resistor 5V compatible logic level inputs


    Original     		PDF PD97383 IRS21962S 200kHz 16-Lead IRS21962S IRS21962SPBF JESD22-A115 JESD78 IRS21962STRPBF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet No – PD97383 March 17, 2009 IRS21962S Dual channel high-side drivers with floating input Features • • • • • • Two independent high side output channels CMOS Schmitt trigger inputs with pull down resistor 5V compatible logic level inputs


    Original     		PDF PD97383 IRS21962S 200kHz 16-Lead

    Untitled

    Abstract: No abstract text available
    Text: AMG-DF102 MOSFET and IGBT Full Bridge Driver up to 600V 1. Functional Description of the AMG-DF102 The AMG-DF102 is a high voltage MOSFET and IGBT driver IC with two dependent high and low side output channels for Full-Bridge applications. The AMG-DF102 has an additional


    Original     		PDF AMG-DF102 AMG-DF102

    600V igbt dc to dc buck converter

    Abstract: diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent
    Text: Highly Integrated Off-Line Power Switch 1 The FS6X1220RT Fairchild Power Switch FPS is a highly integrated offline power switch for DC/DC forward or fly-back power supply applications. This device integrates a fully avalanche-rated SenseFET (200V minimum


    Original     		PDF FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 Power247TM, 600V igbt dc to dc buck converter diode 8a 600v FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent circuit diagram of mosfet based smps power supply FQP9N50C FDS4935 equivalent

    circuit diagram of mosfet based smps power supply

    Abstract: FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel
    Text: Intelligent Power Switch Integrates Low Current IC and P-Channel MOSFET for Slew Rate Control www.fairchildsemi.com/whats_new/fdc6901l_nph.html The FDC6901L is a one-of-a-kind power switch integrating an advanced Trench technology P-Channel MOSFET with a slew rate controller IC. The


    Original     		PDF new/fdc6901l FDC6901L FDJ129P Power247TM, circuit diagram of mosfet based smps power supply FSD210 8-pin 6 PIN smps control ic FOR LED DRIVER SMPS MOSFET 3 phase smps circuit diagram using mosfet FQP2N60C 1000V P-channel MOSFET equivalent fsd210 FQPF1N60C 600V 2A MOSFET N-channel

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    speed control of induction motor by using scr

    Abstract: 12v dc motor speed controller using igbt pwm speed control of 3 phase induction motor by using scr speed control of 1 phase induction motor by using scr universal MOTOR speed control using scr selni universal MOTOR SPEED CONTROL USING IGBT 500w pwm DC motor controller selni universal motor induction motor speed control with scr
    Text: Motor control A reference guide www.st.com Contents Introduction 4 Product family highlights 4 Universal motor 6 Brush DC motor 8 Single-phase induction motor 10 Three-phase induction motor 12 Three-phase brushless DC motor 14 Stepper motor 16 Switched reluctance motor


    Original     		PDF BRMOTOR/0503 speed control of induction motor by using scr 12v dc motor speed controller using igbt pwm speed control of 3 phase induction motor by using scr speed control of 1 phase induction motor by using scr universal MOTOR speed control using scr selni universal MOTOR SPEED CONTROL USING IGBT 500w pwm DC motor controller selni universal motor induction motor speed control with scr

    IX2127

    Abstract: DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R01 DS-IX2127-R01 EIA-481-2 VB-12 FLUORESCENT ballast 12v

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    IR2117

    Abstract: igbt driver IR2117 IR2118 IR2117S IR2118S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60146-J
    Text: Preliminary Data Sheet No. PD60146-J IR2117/IR2118 S SINGLE CHANNEL DRIVER Features • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60146-J IR2117/IR2118 IR2117) IR2118) IR2117/IR2118 IRFBC20) IRFBC30) IRFBC40) IR2117 igbt driver IR2117 IR2118 IR2117S IR2118S IRFBC20 IRFBC30 IRFBC40 IRFPE50 PD60146-J

    IR2181 application notes

    Abstract: IR2181 IR21814 IR2182 IR21814S IR2181S MS-012AA 14-Lead SOIC IR21814S PD-60172-A CL 2181
    Text: Preliminary Data Sheet No. PD-60172-A IR2181/IR21814 HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage dV/dt immune


    Original     		PDF PD-60172-A IR2181/IR21814 IR2181/IR21814) IR2181/IR21814 IR2181 application notes IR2181 IR21814 IR2182 IR21814S IR2181S MS-012AA 14-Lead SOIC IR21814S PD-60172-A CL 2181

    IR2101

    Abstract: ir2101 datasheet IR2101 AN IR2101S MP150 silicon rectifier data manual
    Text: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.043C IR2101 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V


    Original     		PDF IR2101 IR2101 EME6300 MP150 MP190 ir2101 datasheet IR2101 AN IR2101S silicon rectifier data manual

    mosfet 600V logic level

    Abstract: IR2181 IR2181 application notes IR21814S IR2181S CL 2181 ir21814 IR2182 MS-012AA voltage level shifter 0V to 5V
    Text: Preliminary Data Sheet No. PD-60172-B IR2181 S IR21814(S) HIGH AND LOW SIDE DRIVER Features • Floating channel designed for bootstrap operation • • • • • • • Product Summary Fully operational to +600V Tolerant to negative transient voltage


    Original     		PDF PD-60172-B IR2181 IR21814 IR2181/IR21814) IR2181/IR25 IR2181/IR21814 MS-012AA) mosfet 600V logic level IR2181 application notes IR21814S IR2181S CL 2181 IR2182 MS-012AA voltage level shifter 0V to 5V

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R02

    IGBT Designers Manual

    Abstract: 044C IR2102 IR2102S MP150 mosfet 600V logic level
    Text: Data Sheet No. PD-6.044C IR2102 HIGH AND LOW SIDE DRIVER Features Product Summary n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout


    Original     		PDF IR2102 IR2102 EME6300 MP150 MP190 IGBT Designers Manual 044C IR2102S mosfet 600V logic level

    IR2122

    Abstract: IR2122S 600V Current Sensing N-Channel IGBT 600V IGBT Current Sensing Channel Driver
    Text: Preliminary Data Sheet No. PD60130-I IR2122 S CURRENT SENSING SINGLE CHANNEL DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V


    Original     		PDF PD60130-I IR2122 IR2122 IR2122S IR2122S 600V Current Sensing N-Channel IGBT 600V IGBT Current Sensing Channel Driver

    Untitled

    Abstract: No abstract text available
    Text: IX2127 High-Voltage Power MOSFET & IGBT Driver Driver Characteristics Parameter VOFFSET IO +/- Source/Sink Description Rating Units 600 V 250/500 mA VCSth 250 mV tON / tOFF (Typical) 100 ns The IX2127 is a high-voltage, high-speed power MOSFET and IGBT driver. High-voltage level-shift


    Original     		PDF IX2127 IX2127 DS-IX2127-R02

    IRF540 n-channel MOSFET

    Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
    Text: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.


    OCR Scan     		PDF QD102t IRF540 n-channel MOSFET GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER bSE D • M Ö S S 4S 2 0 D 1 Ö 21 4 b41 ■ INR Provisional Data Sheet P D -6.0 26 INTERNATIONAL RECTIFIER I « R POWER MOSFET/IGBT GATE DRIVER IR2112 General Description Features The IR2112 is a high voltage, high speed power MOSFET and IGBT driver with independent high


    OCR Scan     		PDF IR2112 IR2112 M0-Q01AD. IR2112-1

    IR2113 APPLICATION NOTE

    Abstract: IR2113 16 pin
    Text: INTERNATIONAL RECTIFIER bSE î • 4Ö55M52 GCUÖ2G2 TET ■ INR Data Sheet No. PD-6.021 INTERNATIONAL. RECTIFIER HIGH VOLTAGE MOS GATE DRIVER IRS113 General Description Features The IR2113 is a high voltage, high speed MOSgated power device driver with independent high side


    OCR Scan     		PDF 55M52 IRS113 IR2113 D-6380 IR2113 APPLICATION NOTE IR2113 16 pin

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1