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    MODE-S TRANSISTOR Search Results

    MODE-S TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MODE-S TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 1011GN-700ELM Rev 2 1011GN-700ELM 700 Watts – 70% Efficiency Mode-S ELM, Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 1011GN-700ELM is a common source, class AB, GaN on SiC HEMT power transistor specifically designed for Mode-S ELM Applications. It is


    Original     		PDF 1011GN-700ELM 1011GN-700ELM 55-KR 55-KR

    CS3705

    Abstract: RFM10n50 RFM10N45
    Text: Standard Power M O S F E T s - RFM10N45, RFM10N50 File Number 1788 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 10 A, 450 V - 500 V 0.6 1 N-CHANNEL ENHANCEMENT MODE fD S lo n *


    OCR Scan     		PDF RFM10N45, RFM10N50 RFM10N45 RFM10N50* 92CS-5706I AN-7254 AN-7260. 92CS-37062 J2CS-37063 92CS-37376 CS3705 RFM10n50

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies S M P S , motor control, welding,


    OCR Scan     		PDF BUK445-200A/B BUK445 -200A -200B

    02p SMD TRANSISTOR

    Abstract: sot23 02p BST82 smd transistor marking TL MBB076
    Text: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N -channel enhan ce m e n t mode vertical D -M O S tra n sisto r in S O T23 envelope and designed fo r use as S urface M ounted D evice SM D in


    OCR Scan     		PDF BST82 sot23 02p SMD TRANSISTOR sot23 02p BST82 smd transistor marking TL MBB076

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK455-50A BUK455-50B BUK455 bbS3T31 777ali

    BUK454-500B

    Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
    Text: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK454-500A BUK454-500B BUK454 -500A -500B T-39-11 T0220AB K45450 tb 10 n 6

    BUK445

    Abstract: BUK445-600A BUK445-600B
    Text: N AUER P H I L I P S / D I S C R E T E 5SE D • 1^53=131 0 Q 2 0 H 1 S Ô ■ P o w erM O S tra n s isto r GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 0Q20H1S BUK445-600A BUK445-600B BUK445 -600A -600B BUK445-600B

    mosfet IRF 3306

    Abstract: IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153
    Text: Standard Power M O S FE T s • IRFP150, IRFP151, IRFP152, IRFP153 File Number Power MOS Field-Effect Transistore N-Channel Enhancement-Mode Power Field-Effect Transistors 34 A and 40 A, 60 V - 100 V rDsioni = 0.055 Q and 0.08 fi N-CHANNEL ENHANCEMENT MODE


    OCR Scan     		PDF IRFP150, IRFP151, IRFP152, IRFP153 IRFP153are bFP151, mosfet IRF 3306 IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153

    BUZ25

    Abstract: IEC134 TO3 philips t03 package transistor pin dimensions HC-293
    Text: PowerMOS transistor BUZ25 GfciE D N AMER PHILIP S/DISCRET E ^53^31 OOmbDS S • July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ25 BUZ25 IEC134 TO3 philips t03 package transistor pin dimensions HC-293

    transistor bt 137

    Abstract: 100-C BUK438-500B
    Text: N AMER P H I L I P S / D I S C R E T E fc^E ]> • bb 5 3 T 3 1 OOSDH^S Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUK438-500B transistor bt 137 100-C BUK438-500B

    BUK453-500B

    Abstract: T0220AB E04020
    Text: N AMER P H I L I P S / D I S C R E T E b'IE D t . b s a 'm 00301=10 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF BUK453-500B T0220AB BUK4y3-500 E04020

    BUZ356

    Abstract: T0218AA BUZ-356
    Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356

    IRFS12

    Abstract: IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet
    Text: 01 3075001 ODIÖSEM 1 |~~ 3875081 G E S O L I D S T A T E Standard Power MOSFETs 0 1E 18329 _ IRF510, IRF511, IRF512, IRF513 File Number 1573 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF DDlflaS11] IRF510, IRF511, IRF512, IRF513 0V-100V IRF512 IRF513 IRFS12 IRF511 1RF512 IRF51G IRFS10 CC035 IRF510 MOSFET transistor irf510 IRF512 IRF 511 MOSfet

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ348 TQ218AA; T-39-13 LLS3T31 OD14743

    BUZ15

    Abstract: transistor buz IEC134 t03 package transistor pin dimensions
    Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ15 bt53i3i La-11 bb53131 t-39-13 BUZ15 transistor buz IEC134 t03 package transistor pin dimensions

    Untitled

    Abstract: No abstract text available
    Text: fîàSupertex inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ R d S(ON ^ G S (th ) b v dgs (max) (max) TO-92 200V 10£i 2.0V VN2010L Features Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a


    OCR Scan     		PDF VN2010L bre60V 250mA

    buz25

    Abstract: No abstract text available
    Text: PowerMOS transistor BUZ25 QbE D N AMER PHILIPS / D I S CR E T E bbS3T31 0014bDS S July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ25 bbS3T31 0014bDS T-39-11 BUZ25_ bb53131 0014blQ buz25

    Diode LT 404

    Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB
    Text: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF D030bfll BUK456-100A/B T0220AB BUK456 -100A -100B /V-20/ Diode LT 404 100-P BUK456-100A BUK456-100B

    transistor IC BT 134

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 005D3bS 444-450B hbS3T31 transistor IC BT 134

    BUK455-600B

    Abstract: BUK455-600A BUK455 T0220AB
    Text: N AMER PH I L I P S / D I S C R E T E 2 5 E ^53=131 D 0 0 S D 5 15 1 PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan     		PDF 00SD515 BUK455-600A BUK455-600B T-21-13 BUK455 -600A -600B BUK455-600B BUK455-600A T0220AB

    AN027R1

    Abstract: UAA4006A UAA4006 UAA4006ADP fly-back transformer UAA4006A 1N4I48 639S thomson rf power transistor UAA400
    Text: S G S-THOnSON 7ÛC D I 7 e]5^5 3 7 O D D b 4 b l . -,— - 78C 0 6 4 6 1 T - sz - tb 3 k UAA4006A SWITCH MODE POWER SUPPLY CONTROL CIRCUIT SWITCH MODE POWER SUPPLY CONTROL CIRCUIT The UAA4006A is a regulation and control device for fly-back sw itch mode pow er supplies using one external sw itching transistor. .


    OCR Scan     		PDF UAA4006A UAA4006A 7TETE37 7T2T237 CB-79 AN027R1 UAA4006 UAA4006ADP fly-back transformer UAA4006A 1N4I48 639S thomson rf power transistor UAA400

    BUZ20

    Abstract: No abstract text available
    Text: Standard Power MOSFETs BUZ20 File Number 2254 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 100 V = 0.2 Q N-CHANNEL ENHANCEMENT MODE fD S I o n Features: • SOA is pow er-dissipation lim ite d ■ N anosecond s w itching speeds a Linear transfer characteristics


    OCR Scan     		PDF MOSFETs-BUZ20 O-220AB 92GS-441 BUZ20

    MRC23

    Abstract: URC204 BSP152
    Text: Philips Semiconductors bbS3T31 0023053 IflS IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N A PIER P H I L I P S / D I S C R E T E FEATURES b7E SYMBOL v DS • High-speed switching • No secondary breakdown. N-channel enhancement mode


    OCR Scan     		PDF bbS3T31 BbPl52 OT223 OT223 0023flSfl BSP152 MRC209 MRC23 URC204 BSP152

    BUK445-400B

    Abstract: 100-lr
    Text: N AflER P H I L I P S / D I S C R E T E b^E ]> m bbS3T31 0Q3QSbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bbS3T31 BUK445-400B -SOT186 BUK445-400B 100-lr