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    BUK454 Price and Stock

    Philips Semiconductors BUK454-200A

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    Bristol Electronics BUK454-200A 1,000
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    Quest Components BUK454-200A 800
    • 1 $2.64
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    BUK454-200A 22
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    Philips Semiconductors BUK454-500B

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    Bristol Electronics BUK454-500B 94
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    Philips Semiconductors BUK454-200B

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    Bristol Electronics BUK454-200B 34
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    Quest Components BUK454-200B 27
    • 1 $3
    • 10 $2.25
    • 100 $1.875
    • 1000 $1.875
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    Philips Semiconductors BUK454200A

    POWERMOS TRANSISTOR Power Field-Effect Transistor, 9.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BUK454200A 723
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    BUK454 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUK454-200 Philips Semiconductors Powermos Transistor Original PDF
    BUK454-200A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK454-200A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK454-200A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK454-200A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK454-200A Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK454-200A Philips Components Datasheet Library 1989 Scan PDF
    BUK454-200A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK454-200A Philips Semiconductors PowerMOS transistor Scan PDF
    BUK454-200A/B Philips Semiconductors PowerMOS transistor Original PDF
    BUK454-200B Philips Semiconductors PowerMOS Transistor Original PDF
    BUK454-200B Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BUK454-200B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    BUK454-200B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUK454-200B Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUK454-200B Philips Components Datasheet Library 1989 Scan PDF
    BUK454-200B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK454-200B Philips Semiconductors PowerMOS transistor Scan PDF
    BUK454-400A Philips Semiconductors PowerMOS Transistor Original PDF
    BUK454-400A Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUK454 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUK454-200A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)9.2 I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)3.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)


    Original
    PDF BUK454-200A

    Untitled

    Abstract: No abstract text available
    Text: BUK454-600B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.6 I(DM) Max. (A) Pulsed I(D)1.6 @Temp (øC)100 IDM Max (@25øC Amb)10.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF BUK454-600B

    Untitled

    Abstract: No abstract text available
    Text: BUK454-600A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF BUK454-600A

    Untitled

    Abstract: No abstract text available
    Text: BUK454-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF BUK454-500A

    Untitled

    Abstract: No abstract text available
    Text: BUK454-200B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)8.2 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)


    Original
    PDF BUK454-200B

    Untitled

    Abstract: No abstract text available
    Text: BUK454-450B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF BUK454-450B

    Untitled

    Abstract: No abstract text available
    Text: BUK454-800A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)2.4 I(DM) Max. (A) Pulsed I(D)1.5 @Temp (øC)100 IDM Max (@25øC Amb)9.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85 Minimum Operating Temp (øC)


    Original
    PDF BUK454-800A

    Untitled

    Abstract: No abstract text available
    Text: BUK454-650A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)650 V(BR)GSS (V)30 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)


    Original
    PDF BUK454-650A

    BUK454-200A

    Abstract: BUK444-200A BUK454-200B
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in


    Original
    PDF BUK454-200A/B O220AB BUK454-200A BUK444-200A BUK454-200B

    Untitled

    Abstract: No abstract text available
    Text: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    PDF 0QE0M70 BUK454-500A BUK454-500B BUK454 -500A -500B

    Untitled

    Abstract: No abstract text available
    Text: N AMER ^ 1 = 53=131 3SE D P H IL IP S /D IS C R E T E 005041=5 1 BUK454-450B PowerMOS transistor r -3 7 - u QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF BUK454-450B

    BUK454-400B

    Abstract: T0220AB PPD-25
    Text: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,


    OCR Scan
    PDF hhS3131 BUK454-400B T0220AB BUK454-400B T0220AB PPD-25

    BUK454-600B

    Abstract: T0220AB t 326 Transistor
    Text: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.


    OCR Scan
    PDF 0G30b3G BUK454-600B T0220AB BUK454-600B T0220AB t 326 Transistor

    BUK454-600A

    Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
    Text: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan
    PDF BUK454-600A BUK454-600B BUK454 -600A -600B T-39-17 1-fjv T0220AB BUK454-600

    BUK454-200A-B

    Abstract: BUK454-200B T0220AB
    Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in


    OCR Scan
    PDF BUK454-200A/B T0220AB T0220AB; T0220 BUK454-200A-B BUK454-200B

    HA 1137

    Abstract: BUK454-200A BUK454-200B T0220AB
    Text: BUK454-200A BUK454-200B Philips Components PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-eflect power transistor in a plastic envelope. The device is intended lor use in Switched Mode Power Supplies SMPS , motor control, welding,


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    PDF BUK454-200A BUK454-200B BUK454 -200A -200B M89-1137/RST HA 1137 BUK454-200A BUK454-200B T0220AB

    BUK454-500B

    Abstract: BUK454 BUK454-500A T0220AB
    Text: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK454-500A BUK454-500B BUK454 -500A -500B T0220AB M89-1160/RC BUK454-500B BUK454-500A

    transistor bo 244

    Abstract: BUK454-450B T0220AB
    Text: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53=131 00204b5 PowerMOS transistor 1 ■ BUK454-450B r -3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan
    PDF BUK454-450B T0220AB; transistor bo 244 BUK454-450B T0220AB

    TRANSISTOR FS 10 TM

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in


    OCR Scan
    PDF BUK454-200A/B T0220AB TRANSISTOR FS 10 TM

    BUK454-400B

    Abstract: BUK454 BUK454-400A T0220AB
    Text: BUK454-400A BUK454-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,


    OCR Scan
    PDF BUK454-400A BUK454-400B BUK454 -400A -400B T0220AB; M89-1159/RC BUK454-400B BUK454-400A T0220AB

    Untitled

    Abstract: No abstract text available
    Text: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF BUK454-600A BUK454-600B BUK454 -600A -600B T-39-n IE-04

    BUK454-450B

    Abstract: T0220AB
    Text: N AMER PHILIPS/DIS CRET E 2SE D • ^53=131 00204b5 1 ■ PowerMOS transistor BUK454-450B r - 3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF BUK454-450B T0220AB; T0220AB

    JZ2 transistor

    Abstract: 1S93 BUK454-500B T0220AB ADl40
    Text: bSE J> PHILIPS INTERNATIONAL 711Qfl2b O O b H Q b l 2 ^ Philips Semiconductors BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan
    PDF 7110a2b BUK454-500B T0220AB DS10N) JZ2 transistor 1S93 ADl40

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,


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    PDF BUK454-200A/B BUK474-200A/B -200A -200B OT186A