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    transistor IC BT 134

    Abstract: No abstract text available
    Text: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 005D3bS 444-450B hbS3T31 transistor IC BT 134

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    Abstract: No abstract text available
    Text: PRELIMINARY CMOS DRAM KM44V16000, KM44V16100 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,


    OCR Scan     		PDF KM44V16000, KM44V16100 16Mx4 0G2G371