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Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ356 Abstract: T0218AA BUZ-356 Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356

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BUZ356

Abstract: T0218AA BUZ-356
Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

OCR Scan

PDF

BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356