DA 2688
Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Text: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055
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TIP3055
TIP2955
T0-218AA
7S265
DA 2688
transistor DA 2688
LT 5265
transistor mj 3055
c2688
C-2688
equivalent transistor TIP3055
c2688 L
c2688 transistor
tRANSISTOR c2688
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Q400414
Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Text: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•
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-T-25-0Ã
MAC974
MAC976
MAC97AÂ
MAC97A6
MAC97A8
SC92B
T0218AC
BTB41200B
Q400414
06040J7
TO810MH
q2006l5 triac
Q2008F51
Triac SC141D
L201E5
SC136B
L4004F91
T6401M
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Untitled
Abstract: No abstract text available
Text: N AflER PHILIPS/DISCRETE OLE D PowerMOS transistor • 0014550 7 BUZ358 r- -i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUZ358
T0218AA;
T-39-13
T0014flSS
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Untitled
Abstract: No abstract text available
Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is
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BUZ384
bbS3i31
00147T0
BUZ384
T-39-13
bb53T31
bb53T31
Q0147TS
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buz349
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ349
TQ218AA;
bbS3131
T-39-13
b53131
D0147SQ
buz349
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T1C263M
Abstract: q4015 triac T1C226D Q200BL5 Q2006L5 Q5025Z6 SC160D q201015 Q4015A Q4006
Text: PART No. ITrms Amps PACKAGE VDRM IDRM Volts mAmps Q1 TRIAC IGT Q2 Q3 mAmps Q4 VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976 MAC978 MAC97A4 MAC97A6 MAC97A8 200 400 600 200 400 600 .010 .010 .010 .010 .010 .010 10 10 10 5
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MAC974
MAC976
MAC978
MAC97A4
MAC97A6
MAC97A8
SC92B
SC92C
SC92D
SC92M
T1C263M
q4015 triac
T1C226D
Q200BL5
Q2006L5
Q5025Z6
SC160D
q201015
Q4015A
Q4006
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BUZ358
Abstract: LDM80
Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor bbSBTBl 0014050 7 BUZ358 r - 3 ^ - ls May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53131
BUZ358
r-31-
T0218AA;
T-39-13
800VC
BUZ358
LDM80
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transistor KF 517
Abstract: BUZ310 KF 517 BUZ31 BUZ-310 B53 transistor
Text: N AMER PH ILI PS/DIS CRET E : ObE D Pow erM O Stransistor • 1 ^ 53^31 D D iqflBI 5 ■ B U Z 31Ü ^ 2^-1/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ31Ã
T0218AA;
bb53T31
BUZ310
T-39-11
transistor KF 517
BUZ310
KF 517
BUZ31
BUZ-310
B53 transistor
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BUZ384
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE GbE D PowerMOS transistor • bbSBTBl 001470? 4 ■ BUZ384 t - 2*?'13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is
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BUZ384
T0218AA;
BUZ384
T-39-13
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Untitled
Abstract: No abstract text available
Text: N ANER PHI L I P S / D I S CR E T E bbSBTBl 0 0 1 4 7 7 3 4 ObE D HJZ330 T - 31-/3 PowerMOS transistor May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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HJZ330
T0218AA;
BUZ330
T-39-13
BUZ33U
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerM OS transistor ObE D • bbBBTBl 0014760 1 B U Z 33T T - 3<M3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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T0218AA
BUZ331
T-39-13
bb53c
bb53T31
00147fib
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BUZ357
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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LLS3T31
BUZ357
T-39-13
D014fl4c
BUZ357
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transistor et 455
Abstract: transistor et 454
Text: N AMER PHI LI PS/ DI SCRETE DbE D PowerMOS transistor • bb53*131 0D147bb 7 ■ BCZ3$ l f - ~ _ 3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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0D147bb
T0218AA;
00147bT
T-39-13
BUZ351
001477E
transistor et 455
transistor et 454
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE : ObE D PowerMOS transistor • bb53131 0014651 S ■ BUZ310 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53131
BUZ310
T0218AA;
T-39-11
bbS3T31
T-39-H
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BUZ356
Abstract: T0218AA BUZ-356
Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ356
T0218AA;
BUZ356
T-39-13
T0218AA
BUZ-356
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BUZ350
Abstract: IY TRANSISTOR BUZ35 at ma hi mvs
Text: N AUER P H I L I P S / D I S CR E TE DfaE D PowerMOS transistor ^ 53=131 0 0 1 4 7 5 2 7 BUZ350 T-3^-/3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ350
T0218AA;
T-39-13
BUZ350
IY TRANSISTOR
BUZ35
at ma hi mvs
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DA 2688
Abstract: tip35c equivalent transistor DA 2688 C2688
Text: t é x a s ~i n s t r bâ Ï0PT03- 8 9 6 1 7 2 6 TEXA S IN S T R DTIa^biTat, ooabVTS s OPTO 7 62C 3 6 7 9 2 TIP35JIP35A JIP 3 5 B , TIP35C, TIP35D, TIP35E, TIP35F N-P-N SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed for Complementary Use With TIP36 Series
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0PT03-
TIP35JIP35A
TIP35C,
TIP35D,
TIP35E,
TIP35F
TIP36
T0-218AA
TIP35,
TIP35A,
DA 2688
tip35c equivalent
transistor DA 2688
C2688
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30343
Abstract: TIP55A p6020 tip55 30343 power
Text: TEXAS INSTR -COPTO} b5 DE |flcit117Eb 003bfl3b 8 9 & 1 7 2 6 TEXAS INSTR COPTO 62C 36836 TIP55A, TIP56A, TIP57A, TIP58A N-P-N SILICON POWERJRANSISTORS T - ' . 5 3 ~ * l{ R EV ISED O CTOBER 1984 • Min V B R )C E O °f 2 50 V to 4 0 0 V • 50 W at 1 0 0 ° C C ase Temperature
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117Eb
003bfl3b
TIP55A,
TIP56A,
TIP57A,
TIP58A
T0-218AA
30343
TIP55A
p6020
tip55
30343 power
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D PowerMOS transistor • bb53T31 0014808 6 BUZ308 T- 3^-tf ‘ May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ308
T0218AA;
T-39-11
bb53TBl
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • tbS3T31 00147T4 1 BU Z385 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly suitable for motor
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tbS3T31
00147T4
Fig25Â
BUZ385
T-39-13
bb53TBl
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BUZ356
Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3T31
BUZ356
T0218AA;
0D14flEb
T-39-13
tbS3T31
bb53c
BUZ356
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ348
TQ218AA;
T-39-13
LLS3T31
OD14743
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Untitled
Abstract: No abstract text available
Text: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ155
T0218AA;
T-39-13
bb53T31
0014fl21
BUZ355
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Untitled
Abstract: No abstract text available
Text: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ326
T0218AA;
BUZ326
T-39-13
00147b4
bbS3T31
OD147bS
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