equivalent of BS107
Abstract: BS107 VN2010L BS107 application
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
18-Jul-08
equivalent of BS107
BS107
VN2010L
BS107 application
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VN2010L
Abstract: p-channel 200V
Text: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) 200V 10Ω 2.0V Order Number / Package TO-92 VN2010L Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
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VN2010L
250mA
VN2010L
p-channel 200V
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BS107
Abstract: VN2010L
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
BS107
VN2010L
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Untitled
Abstract: No abstract text available
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
08-Apr-05
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BS107
Abstract: 55C24 VN2010L
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 VN2010L 200 BS107 D D D D D Low On-Resistance: 6 W
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
O-226AA)
S-04279--Rev.
16-Jul-01
BS107
55C24
VN2010L
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VN2010L
Abstract: BS107
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
VN2010L
BS107
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TO-92-18RM
Abstract: BS107 VN2010L TO-92-18R
Text: VN2010L/BS107 Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications
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VN2010L/BS107
VN2010L
BS107
O226AA)
P-38283--Rev.
TO-92-18RM
BS107
VN2010L
TO-92-18R
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equivalent of BS107
Abstract: BS107 application BS107 vn2010l
Text: VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN2010L 200 BS107 rDS(on) Max (W) VGS(th) (V) ID (A) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12 Features Benefits Applications D D D
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VN2010L/BS107
BS107
VN2010L
O-226AA)
P-38283--Rev.
15-Aug-94
equivalent of BS107
BS107 application
BS107
vn2010l
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One-chip telephone IC
Abstract: telephone line voice amplifier Voice to e1 converter circuit U 4076 One-chip telephone cordless IC VN2410* mosfet BFP67 slc96 remote terminal E1 PCM encoder V30 CPU
Text: TEMIC Semiconductors Communication Segment Digital Networks Wireless Communication Wired Communication Communication We’ve been supporting advances in communications industry for decades. Today, we continue to offer the best combination of applications knowledge and leading-edge solutions required by the
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29C93A
102/V
V25bis)
PQFP44
29C93A
29C921
80C51
One-chip telephone IC
telephone line voice amplifier
Voice to e1 converter circuit
U 4076
One-chip telephone cordless IC
VN2410* mosfet
BFP67
slc96 remote terminal
E1 PCM encoder
V30 CPU
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70611
Abstract: FET pair n-channel p-channel mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 complement logic level complementary MOSFET mosfet discrete totem pole CIRCUIT Logic Level p-Channel Power MOSFET AN804 Si9942DY
Text: AN804 Vishay Siliconix P-Channel MOSFETs, the Best Choice for High-Side Switching Historically, p-channel FETs were not considered as useful as their n-channel counterparts. The higher resistivity of p-type silicon, resulting from its lower carrier mobility, put it at a
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AN804
retur5600
VP0300L
O-226AA
VN0300L
TP0610L
2N7000
70611
FET pair n-channel p-channel
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 complement
logic level complementary MOSFET
mosfet discrete totem pole CIRCUIT
Logic Level p-Channel Power MOSFET
AN804
Si9942DY
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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mosfet cross reference
Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is
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T0-92
options4206A
ZVN4206C
ZVN4206E
ZVN4306A
TN2106K1
VN2210N3
TN0606N3
TN0606N6
mosfet cross reference
pj 929 diode
pj 1229 diode
BSS250
VN0109N5
pj 66 diode
pj 929
BSS295 "direct replacement"
BSS295 "cross reference"
pj 69 diode
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2n7000 complement
Abstract: VP0300L mosfet discrete totem pole drive CIRCUIT 2n7000+complement 2n7000 equivalent AN804 Si9939DY Si9942DY Si9958DY TP0610
Text: AN804 Siliconix PĆChannel MOSFETs, the Best Choice for HighĆSide Switching Ed Oxner Circuit Applications Historically, pĆchannel FETs were not considered as useful as their nĆchannel counterparts. The higher resistivity of pĆtype silicon, resulting from its lower carrier mobility, put
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AN804
VP0300L
O226AA
VN0300L
TP0610L
2N7000
VP2020L
2n7000 complement
VP0300L
mosfet discrete totem pole drive CIRCUIT
2n7000+complement
2n7000 equivalent
AN804
Si9939DY
Si9942DY
Si9958DY
TP0610
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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VN2010
Abstract: No abstract text available
Text: VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON V g Order Number / Package S(U i ) b v dgs (max) (max) TO-92 200V 10Q 2.0V VN2010L Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement
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VN2010L
250mA
VN2010
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VN2020L
Abstract: No abstract text available
Text: • SILICONIX INC C T Siliconix 855*4735 00140=1« 1 ■ VN2010 SERIES J L M in c o r p o r a t e d N-Channel Enhancement-Mode M O S Transistors T-TSt-2.5 PRODUCT SUMMARY PART NUMBER V BR DSS fDS(ON) (V) (« ) TO-92 *D (A) PACKAGE VN2010L 200 10 0.19 TO-92
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VN2010
VN2010L
VN2020L
VNDQ20
VN2020L
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Untitled
Abstract: No abstract text available
Text: VN2010L N-Channel Enhancement-Mode MOS Transistor JTtSgft PRODUCT SUMMARY V BR DSS (V) 200 Performance Curves: TO-92 (TO-226AA) T •d (A) 10 0.19 VNDQ20 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN 3 .1— Ln ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)
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VN2010L
VNDQ20
O-226AA)
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Untitled
Abstract: No abstract text available
Text: ^ Su perte x inc. VN2010L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ BV dgs Order Number / Package R DS ON ^G S (th) (max) (max) TO-92 10 ÌÌ 2.0V VN2010L 200V Features Advanced DMOS Technology Li These enhancement-mode (normally-off) transistors utilize a
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VN2010L
300jas
00D43DÃ
250mA
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VN2010L
Abstract: S0427 siliconix marking code BS107
Text: VN2010L/BS107 Vishay Siliconix N-Channel 200-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D S S M i n ( V ) r D S (o n) M a x ( Q ) VGS(lh)(V) 10 @ V qs = 4.5 V 0.8 to 1.8 0.19 28 @ V gs = 2.8 V 0.8 to 3 0.12 VN2010L b (A) 200 BS107 Low On-Resistance: 6 £2
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VN2010L/BS107
VN2010L
BS107
O-226AA
O-92-18RM
S-04279--
16-Jul-01
O-226AA)
S-0427
S0427
siliconix marking code
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ha1100
Abstract: UG-94 bs107
Text: Temic VN2010L/BS107 S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max <Q) VGS(th)(V) Id (A) 10 @ V o s = 4.5 V 0.8 to 1.8 0.19 28 @ V o s = 2.8 V 0.8 to 3 0.12 V N2010L 200 BS107
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VN2010L/BS107
N2010L
BS107
O-226AA)
ug-94
ha1100
UG-94
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Untitled
Abstract: No abstract text available
Text: Temic VN2010L/BS107 N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS VN2010L Mín (V) r DS(on) 200 BS107 Max (Q) Id (A) (V) VGS(th) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ VGS = 2.8 V 0.8 to 3 0.12
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VN2010L/BS107
VN2010L
BS107
Su5/94)
O-226AA)
P-38283--
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Untitled
Abstract: No abstract text available
Text: mSg3& VNDQ20 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA • BS107 VN2010L Single Chip • Available as VNDQ5CHP DEVICE TYPICAL CHARACTERISTICS Output Characteristics fo r Low Gate Drive Ohmic Region Characteristics VDS (V) VDS (V)
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VNDQ20
O-226AA)
BS107
VN2010L
VNDQ20
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Untitled
Abstract: No abstract text available
Text: ^ VN2010L S u p e r te x m e . N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV qss ^ BVDgs ^DS ON (max) ^GS(th) (max) 200V 10C2 1.8V Order Number / Package TO-92 VN2010L Features Advanced DMOS Technology □ Free from secondary breakdown
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VN2010L
100mA
250mA
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BS-107C
Abstract: No abstract text available
Text: Tem ic VN2010L/BS107 Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Ö) V(BR,)DSS Min (V) VN2010L BS107 200 Features v G S (th ) I d (A) (V) 10 @ VGS = 4.5 V 0.8 to 1.8 0.19 28 @ V GS = 2.8 V 0.8 to 3 0.12 Benefits
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VN2010L/BS107
VN2010L
BS107
P-38283--Rev.
O-226AA)
BS-107C
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